Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage (TC=25˚C) Symbol Ratings VCBO 500 V VCES 500 V VCEO 400 V VEBO 7 V Peak collector current ICP 20 A Collector current IC 10 A Base current IB 5 A dissipation Ta=25°C 70 PC Junction temperature Tj Storage temperature Tstg 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 3 ■ Electrical Characteristics φ3.2±0.1 Unit Emitter to base voltage Collector power TC=25°C 21.0±0.5 15.0±0.2 ● 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ● 15.0±0.3 11.0±0.2 0.7 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 5A 8 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 1A 1 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 1A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 5A, IB1 = 1A, IB2 = –2A, VCC = 150V V 25 MHz 0.7 µs 2 µs 0.3 µs 1 Power Transistors 2SC3872 PC — Ta IC — VCE 60 50 40 30 20 (2) 600mA 500mA 450mA 8 400mA 350mA 300mA 250mA 6 200mA 4 150mA 100mA 2 50mA (3) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 TC=–25˚C 100˚C 0.1 0.03 0.1 0.3 1 3000 3 300 100 TC=100˚C –25˚C 10 3 Cob — VCB 0.1 0.3 1 3 0.3 1 3 100 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 10 3 tstg 1 0.3 tf 0.1 ton 0.3 1 3 10 Non repetitive pulse TC=25˚C t=0.5ms IC 10 1ms 10ms 3 DC 1 0.3 0.1 0.03 0.01 0.01 Collector to base voltage VCB (V) 0.1 30 I CP 0.03 100 10 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 300 30 0.1 100 30 1000 10 0.01 0.01 0.03 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 3 0.03 0.1 0.01 0.03 10 100 1 –25˚C Collector current IC (A) 10000 0.3 0.1 0.3 1 0.01 0.03 10 25˚C 30 Collector current IC (A) 3000 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE 3 0.01 0.01 0.03 TC=100˚C 1 fT — IC 1000 0.3 3 VCE=5V 10 25˚C 10 1000 IC/IB=5 1 IC/IB=5 30 hFE — IC 10000 30 1 0.1 12 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) TC=25˚C IB=1000mA 10 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.0W) (1) 70 0 2 VCE(sat) — IC 10 Collector current IC (A) Collector power dissipation PC (W) 80 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3872 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 40 Lcoil=200µH IC/IB=5 (2IB1=–IB2) TC=25˚C Collector current IC (A) 35 L coil 30 IB1 25 –IB2 Vin ICP 20 T.U.T IC VCC 15 10 Vclamp tW 5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3