Power Transistors 2SA1501 Silicon PNP epitaxial planar type For power switching Unit: mm ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 4.2±0.2 7.5±0.2 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = –400V, IE = 0 Emitter cutoff current IEBO VEB = –7V, IC = 0 Collector to emitter voltage VCEO IC = –10mA, IB = 0 hFE1 Forward current transfer ratio φ3.1±0.1 W 2.0 ■ Electrical Characteristics 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features * hFE2 min typ max Unit –100 µA –100 µA –400 VCE = –5V, IC = – 0.5A 20 VCE = –5V, IC = –2A 8 V 100 Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.4A –1.0 V Base to emitter saturation voltage VBE(sat) IC = –2A, IB = – 0.4A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton IC = –2A, 1.0 µs Storage time tstg IB1 = – 0.4A, IB2 = 0.4A, 2.5 µs Fall time tf VCC = –100V 1.0 µs *h FE1 15 MHz Rank classification Rank Q P hFE1 20 to 60 50 to 100 1 Power Transistors 2SA1501 PC — Ta IC — VCE 40 TC=25˚C – 0.8 IB=–10mA –9mA –8mA – 0.6 (1) 30 –7mA –6mA –5mA – 0.4 20 –1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –10 –12 TC=–25˚C –1 100˚C 25˚C –30 300 100 25˚C TC=100˚C 30 –25˚C 10 3 1 0.3 Cob — VCB –1 –3 100 30 10 3 –30 3 1 10 3 1 tf –100 Collector to base voltage VCB (V) –3 –10 Non repetitive pulse TC=25˚C –30 tstg 0.3 –1 Area of safe operation (ASO) –10 ICP –3 IC t=1ms DC –1 10ms – 0.3 ton 0.1 – 0.1 – 0.03 0.01 –10 10 –100 0.03 –3 30 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=5(–IB1=IB2) VCC=–100V TC=25˚C 30 Switching time ton,tstg,tf (µs) 300 –100 100 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –10 ton, tstg, tf — IC 100 1000 –30 VCE=–10V f=1MHz TC=25˚C 300 Collector current IC (A) IE=0 f=1MHz TC=25˚C –10 0.3 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –100 10000 3000 –3 fT — IC Collector current IC (A) –10 –1 Collector current IC (A) 1000 Collector current IC (A) –1 –25˚C – 0.01 – 0.1 – 0.3 Transition frequency fT (MHz) –3 1 – 0.1 – 0.3 –1 VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 – 0.03 Collector output capacitance Cob (pF) –8 IC/IB=5 –30 –3 25˚C hFE — IC – 0.1 2 –6 1000 –1 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 – 0.01 – 0.1 – 0.3 TC=100˚C – 0.03 (3) 0 –10 – 0.1 –2mA (2) IC/IB=5 –30 – 0.3 –4mA –3mA – 0.2 10 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 50 – 0.3 VCE(sat) — IC –100 –1.0 Collector current IC (A) Collector power dissipation PC (W) 60 0 – 0.2 – 0.4 – 0.6 – 0.8 Collector current IC (A) –1.0 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SA1501 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3