Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 8 A Collector power TC=25°C dissipation Ta=25°C 50 PC Junction temperature Tj Storage temperature Tstg 2 4.2±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 +0.2 0.5 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C 150 ˚C –55 to +150 ˚C B E ■ Electrical Characteristics (TC=25˚C) Parameter Collector cutoff current W 7.5±0.2 16.7±0.3 (TC=25˚C) 2.7±0.2 4.0 ● High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 5.5±0.2 Solder Dip ■ Features 4.2±0.2 10.0±0.2 Symbol ICBO Conditions min typ VCB = 120V, IE = 0 max Unit 100 µA 10 µA ICEO VCE = 100V, IB = 0 Collector to base voltage VCEO(sus) IC = 2A, L = 10mH Emitter to base voltage VEBO IE = 50mA, IC = 0 7 Forward current transfer ratio hFE VCE = 3V, IC = 4A 1000 VCE(sat)1 IC = 4A, IB = 8mA 1.5 V VCE(sat)2 IC = 8A, IB = 80mA 3 V VBE(sat)1 IC = 4A, IB = 8mA 2 V VBE(sat)2 IC = 8A, IB = 80mA 3.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter saturation voltage Base to emitter saturation voltage IC = 4A, IB1 = 8mA, IB2 = –8mA, VCC = 50V 120 V V 20000 20 MHz 0.7 µs 6 µs 2 µs 1 Power Transistors 2SD1773 IC — VCE TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 70 60 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 10 (1) 50 40 30 20 IB=5mA 8 4mA 3mA 2mA 6 1mA 4 0.5mA 2 0.2mA (2) 10 (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 80 12 (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25˚C 30 10 (1) 3 (2) 1 (3) 0.3 0.1 0.1 Collector to emitter voltage VCE (V) VBE(sat) — IC 0.3 1 hFE — IC 3 (1) (3) 1 0.3 1 3 TC=100˚C –25˚C 25˚C 1000 0.3 0.1 0.1 30 10000 3000 (2) 300 Collector current IC (A) 1 3 Area of safe operation (ASO) IC t=1ms 3 10ms 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 2 1000 (V) Thermal resistance Rth(t) (˚C/W) Collector current IC (A) ICP 10 tf 1 ton 0.3 0.1 10 0 1 2 3 4 5 6 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–3 10–2 10–1 7 Collector current IC (A) Rth(t) — t 102 Non repetitive pulse TC=25˚C 3 0.01 0.3 Collector current IC (A) 100 30 tstg 10 0.03 100 0.1 10 Pulsed tw=1ms Duty cycle=1% IC/IB=500 (IB1=–IB2) VCC=50V TC=25˚C VCE=3V Switching time ton,tstg,tf (µs) 10 30000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) (1) IC/IB=500 (2) IC/IB=250 (3) IC/IB=100 TC=25˚C 10 ton, tstg, tf — IC 100 30 3 Collector current IC (A) 1 10 Time t (s) 102 103 104 8