PANASONIC 2SD1535

Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
Unit: mm
●
0.7±0.1
■ Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
12
V
Peak collector current
ICP
14
A
Collector current
IC
7
A
Base current
IB
0.5
A
4.2±0.2
2.7±0.2
7.5±0.2
16.7±0.3
(TC=25˚C)
5.5±0.2
φ3.1±0.1
4.0
●
14.0±0.5
●
Extremely satisfactory linearity of the forward current transfer
ratio hFE
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Full-pack package which can be installed to the heat sink with
one screw
4.2±0.2
1.4±0.1
Solder Dip
■ Features
●
10.0±0.2
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
Collector power TC=25°C
dissipation
50
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
W
2
■ Electrical Characteristics
5.08±0.5
1
B
E
(TC=25˚C)
Symbol
Parameter
min
Conditions
typ
max
Unit
ICBO
VCB = 500V, IE = 0
0.1
mA
ICEO
VCE = 400V, IB = 0
0.1
mA
Emitter cutoff current
IEBO
VEB = 12V, IC = 0
100
mA
Collector to emitter voltage
VCEO(sus)*
IC = 100mA, RBZ = ∞, L = 25mH
400
hFE1
VCE = 2V, IC = 2A
500
hFE2
VCE = 2V, IC = 6A
200
Collector to emitter saturation voltage
VCE(sat)
IC = 7A, IB = 70mA
2.0
V
Base to emitter saturation voltage
VBE(sat)
IC = 7A, IB = 70mA
2.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Collector cutoff current
Forward current transfer ratio
*V
CEO(sus)
Test circuit
IC = 7A, IB1 = 70mA, IB2 = –70mA,
VCC = 300V
X
L 25mH
60Hz
120Ω
6V
Y
1Ω
20
MHz
1.5
µs
5.0
µs
6.5
µs
IC(A)
0.2
0.1
15V
G
mA
80
VCE(V)
1
Power Transistors
2SD1535
PC — Ta
IC — VCE
80
60
(1)
40
20
8
IB=20mA
10mA
6
5mA
4
3mA
2
(3)
(2)
2mA
(4)
1mA
0
0
25
50
75
100
125
150
0
Ambient temperature Ta (˚C)
1
2
3
4
6
30000
1
1000
25˚C
0.3
0.1
0.03
3
300
TC=100˚C
100
25˚C
–25˚C
30
10
0.01 0.03
10
0.3
1
Area of safe operation (ASO)
ICP
t=0.1ms
1ms
DC
1
0.3
0.1
0.03
0.01
10
30
100
300
Collector to emitter voltage VCE
1000
(V)
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
3
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=100 (IB1=–IB2)
VCC=300V
TC=25˚C
tstg
10
3
tf
1
ton
0.3
0.1
3
10
0
1
2
3
4
5
6
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
10
(2)
1
10–1
10–2
10–3
10–2
10–1
7
Collector current IC (A)
Rth(t) — t
102
1
0.1
0.01
0.1
Collector current IC (A)
100
3
–25˚C
0.3
0.03
Collector current IC (A)
10 IC
1
30
3000
TC=–25˚C
30
25˚C
ton, tstg, tf — IC
Switching time ton,tstg,tf (µs)
Forward current transfer ratio hFE
3
1
3
100
10000
10
0.3
TC=100˚C
VCE=2V
30
0.1
10
hFE — IC
IC/IB=100
100˚C
IC/IB=100
30
Collector current IC (A)
100000
0.01
0.01 0.03
Collector current IC (A)
5
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
2
Collector to emitter saturation voltage VCE(sat) (V)
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2.0W)
0
Base to emitter saturation voltage VBE(sat) (V)
VCE(sat) — IC
10
Collector current IC (A)
Collector power dissipation PC (W)
100
1
10
Time t (s)
102
103
104
8