Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 3 A Collector to emitter voltage Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 3.0±0.2 2.9±0.2 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 ■ Electrical Characteristics 15.0±0.3 ● 9.9±0.3 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● 4.6±0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO(sus)* IC = 0.2A, L = 25mH 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 3A 8 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A 1 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *V CEO(sus) Test circuit VCB = 800V, IE = 0 max Collector cutoff current IC = 3A, IB1 = 0.6A, IB2 = – 0.6A, VCC = 200V 50/60Hz mercury relay V 8 MHz 1.5 µs 3 µs 1.0 µs X L 25mH Y 120Ω 6V 1Ω 15V G 1 Power Transistors 2SC5035 PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 7 50 (1) 40 30 20 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 8 Collector current IC (A) Collector power dissipation PC (W) 80 IB=1200mA 6 1000mA 800mA 5 600mA 4 400mA 300mA 3 200mA 150mA 2 100mA 50mA 20mA 1 (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 TC=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 3 0.1 0.3 1 10 fT — IC 300 100 TC=100˚C 25˚C 30 –25˚C 10 3 1 0.3 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 10 3 Collector current IC (A) Transition frequency fT (MHz) 3 0.1 TC=100˚C VCE=5V 10 1 25˚C 3 1000 IC/IB=5 30 25˚C 10 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 1000 0.01 0.01 0.03 Collector current IC (A) 0.1 0.3 1 3 0.1 0.01 0.03 10 Collector current IC (A) Cob — VCB 0.1 0.3 1 3 10 Collector current IC (A) ton, tstg, tf — IC Area of safe operation (ASO) 100 10000 IE=0 f=1MHz TC=25˚C 3000 1000 300 100 30 10 10 0.3 10 30 100 ICP IC 3 t=0.5ms 1 1ms 0.3 10ms DC 0.1 0.03 0.01 0.01 3 tf 0.1 1 0.1 1 ton 1 0.03 Collector to base voltage VCB (V) 10 tstg 3 3 0.3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=250V TC=25˚C 30 Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 8 IC/IB=5 30 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 2 6 Collector current IC (A) 0 100 Non repetitive pulse 0.003 T =25˚C C 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5035 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=50µH IC/IB=5 (IB1=–IB2) TC=100˚C Collector current IC (A) 7 L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC 3 2 Vclamp tW 1 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3