Power Transistors 2SD2158, 2SD2158A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features Parameter (TC=25˚C) Symbol Collector to 2SD2158 base voltage 2SD2158A Collector to 2SD2158 emitter voltage 2SD2158A Ratings 80 VCBO 100 60 VCEO VEBO 6 V Peak collector current ICP 4 A Collector current IC 2 A Base current IB 0.5 A dissipation Ta=25°C Tj Storage temperature Tstg 20 150 ˚C –55 to +150 ˚C Conditions Symbol 2SD2158 2SD2158A 4.2±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Parameter current 1.4±0.1 W 2 ■ Electrical Characteristics Collector cutoff φ3.1±0.1 1 PC Junction temperature 0.7±0.1 V Emitter to base voltage Collector power TC=25°C 2.7±0.2 Unit V 80 4.2±0.2 5.5±0.2 7.5±0.2 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 4.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Solder Dip ● Unit: mm ICBO min typ max VCB = 80V, IE = 0 100 VCB = 100V, IE = 0 100 Unit µA Collector cutoff current ICEO VCE = 40V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 300mA Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 25mA Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 25mA Transition frequency fT VCE = 12V, IC = 200mA, f = 10MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD2158 voltage 2SD2158A *h FE IC = 1A, IB1 = 25mA, IB2 = –25mA, VCC = 50V 60 V 80 500 2500 1 1.2 V V 40 MHz 30 pF 0.6 µs 2.5 µs 1 µs Rank classification Rank hFE Q P O 500 to 1000 800 to 1500 1200 to 2500 1 Power Transistors 2SD2158, 2SD2158A IC — VCE TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2W) 30 1.4 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 1.6 20 (1) 10 (2) IB=3mA 1.2 2mA 1.0 0.8 1mA 0.8mA 0.6 0.6mA 0.4mA 0.4 0.2mA 0.2 0.1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 TC=100˚C 25˚C 1000 100˚C 25˚C 0.1 0.03 1 –25˚C 300 100 30 10 0.01 0.03 3 Collector current IC (A) 3 tf ton 0.3 0.1 10 ICP 3 t=1ms IC 10ms 1 DC 0.3 0.1 0.01 0.01 0 0.5 1.0 1.5 0.03 0.01 0.01 0.03 2.0 Collector current IC (A) 0.1 0.3 1 2.5 3 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 0.03 0.03 2 3 Non repetitive pulse TC=25˚C 30 2SD2158 tstg 1 1 100 Collector current IC (A) Switching time ton,tstg,tf (µs) 10 0.3 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C 30 0.1 Collector current IC (A) ton, tstg, tf — IC 100 –25˚C 0.1 0.3 2SD2158A 0.3 0.3 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30000 3000 TC=–25˚C 0.1 25˚C fT — IC 10000 0.03 1 VCE=4V 3 0.01 0.01 TC=100˚C 1000 IC/IB=40 0.3 3 hFE — IC 100000 1 IC/IB=40 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2158, 2SD2158A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3