PANASONIC 2SC3743

Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
●
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
900
V
VCES
900
V
Collector to emitter voltage
VCEO
800
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Base current
IB
1
A
Collector power TC=25°C
dissipation
Ta=25°C
40
PC
Junction temperature
Tj
Storage temperature
Tstg
4.2±0.2
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
■ Electrical Characteristics
2.7±0.2
4.0
●
High-speed switching
Wide area of safe operation (ASO) with high breakdown voltage
Satisfactory linearity of foward current transfer ratio hFE
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
Solder Dip
■ Features
●
10.0±0.2
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
50
µA
50
µA
ICBO
Emitter cutoff current
IEBO
VEB = 7V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
hFE1
VCE = 5V, IC = 0.1A
6
hFE2
VCE = 5V, IC = 0.8A
6
Collector to emitter saturation voltage
VCE(sat)
IC = 0.8A, IB = 0.16A
0.6
V
Base to emitter saturation voltage
VBE(sat)
IC = 0.8A, IB = 0.16A
1.2
V
Transition frequency
fT
VCE = 5V, IC = 0.1A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
VCB = 900V, IE = 0
max
Collector cutoff current
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
800
V
4
MHz
1.0
µs
4.0
µs
1.0
µs
1
Power Transistors
2SC3743
IC — VCE
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
60
50
(1)
40
30
20
TC=25˚C
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat) — IC
5
4
IB=600mA
400mA
3
300mA
200mA
2
100mA
50mA
1
(2)
10
20mA
(3)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
10
12
TC=–25˚C
100˚C
25˚C
0.1
0.03
0.03
0.1
0.3
1
3
Collector current IC (A)
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
10
ICP
3
t=1ms
IC
10ms
1
DC
0.3
0.1
0.03
0.01
1
3
10
30
100
0.3
TC=100˚C
–25˚C
0.1
0.03
0.01
0.01
300
1000
Collector to emitter voltage VCE (V)
0.03
0.1
0.3
1
3
ton, tstg, tf — IC
VCE=5V
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=250V
TC=25˚C
30
300
100
25˚C
30
TC=100˚C
10
–25˚C
3
1
0.3
10
tstg
3
1
tf
0.3
ton
0.1
0.03
0.1
0.01 0.03
0.01
0.1
0.3
1
3
Collector current IC (A)
100
30
25˚C
Collector current IC (A)
Switching time ton,tstg,tf (µs)
3
0.3
1
100
IC/IB=5
10
1
3
hFE — IC
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
8
1000
0.01
0.01
Collector current IC (A)
6
IC/IB=5
10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
30
2
4
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
80
10
0
0.4
0.8
1.2
1.6
Collector current IC (A)
2.0
Power Transistors
2SC3743
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
Lcoil=100µH
IC/IB=5
(2IB1=–IB2)
TC=25˚C
Collector current IC (A)
7
L coil
6
IB1
T.U.T
IC
ICP
5
–IB2
Vin
4
VCC
IC
3
2
Vclamp
tW
1
0
0
200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3