Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm ■ Features ● 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector +0.1 0.15–0.05 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 1Z (Ta=25˚C) Parameter Symbol Collector cutoff current 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● 1.3±0.1 ● 1.25±0.1 0.65 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 2.1±0.1 0.425 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 1000 2000 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 0.2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 *h FE V MHz Rank classification Rank R hFE 400 ~ 800 Marking Symbol 1ZR S T 600 ~ 1200 1000 ~ 2000 1ZS 1ZT 1 2SD1823 Transistor PC — Ta IC — VCE 120 160 120 80 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 40 20 60 80 100 120 140 160 2 4 6 8 10 12 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 6 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 0.8 1.2 250 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 0.3 1 3 1.6 2.0 VCB=10V Ta=25˚C VCE=10V 10 30 Collector current IC (mA) 8 7 0.4 Base to emitter voltage VBE (V) 1800 1200 3 1 0 fT — I E 1500 10 0.3 40 Collector to emitter voltage VCE (V) Forward current transfer ratio hFE 30 0.01 0.1 60 hFE — IC IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 120 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 200 150 100 50 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100