Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 Unit: mm 2.1±0.1 0.425 +0.1 1.25±0.1 0.3–0 0.65 1.3±0.1 ● 0.425 1 0.65 ● High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 3 2 Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S-Mini Type Package Marking symbol : Symbol Conditions min Collector cutoff current ICBO VCB = –100V, IE = 0 Collector to emitter voltage VCEO IC = –100µA, IB = 0 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE* VCE = –5V, IC = –10mA 130 Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz *h FE 0.2±0.1 I (Ta=25˚C) Parameter Noise voltage +0.1 Ratings 0 to 0.1 Symbol 0.7±0.1 Parameter 0.15–0.05 0.2 (Ta=25˚C) 0.9±0.1 ■ Absolute Maximum Ratings VCE = –10V, IC = –1mA, GV= 80dB, NV Rg = 100kΩ, Function = FLAT typ max Unit –1 µA –150 V V 450 –1 V 200 MHz 4 pF 150 mV Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 Marking Symbol IR IS IT 1 2SB1220 Transistor PC — Ta IC — VCE –120 160 120 80 60 IB=–10mA –9mA –8mA –7mA –6mA –5mA –80 –70 –60 –4mA –50 –3mA –40 –2mA –30 –20 –1mA Ta=75˚C –25˚C –80 –60 –40 –20 –10 0 40 60 80 100 120 140 160 0 0 –2 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 – 0.03 –10 –30 –100 Collector current IC (mA) 10 IE=0 f=1MHz Ta=25˚C 8 7 6 5 4 3 2 1 0 –1 –3 –10 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 250 500 400 Ta=75˚C 25˚C –25˚C 200 –2.0 VCB=–10V Ta=25˚C 225 300 –1.6 Base to emitter voltage VBE (V) fT — I E 100 200 175 150 125 100 75 50 25 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 9 –12 VCE=–5V Forward current transfer ratio hFE –30 –3 –10 600 IC/IB=10 –1 –8 hFE — IC –100 – 0.01 – 0.1 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C –100 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C –90 0 2 IC — VBE –100 Collector current IC (mA) Collector power dissipation PC (mW) 240 –100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100