Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Unit Collector to base voltage VCBO 45 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.15–0.05 Ratings 0 to 0.1 Symbol Parameter 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 2Z (Ta=25˚C) Symbol Conditions min typ max Unit 10 µA Collector cutoff current ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 45 V Collector to emitter voltage VCEO IE = 1mA, IB = 0 35 V Emitter to base voltage VEBO IE = 10µA, IC = 0 4 V 20 Forward current transfer ratio hFE VCB = 10V, IE = –10mA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCB = 10V, IE = –1mA, f = 10.7MHz 50 100 0.5 500 V MHz 1.5 pF 1 Transistor 2SC4417 PC — Ta IC — VCE 60 160 120 80 60 1.6mA 50 1.4mA 1.2mA 40 1.0mA 30 0.8mA 0.6mA 20 0.4mA 40 10 60 80 100 120 140 160 2 4 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 1 3 10 30 80 Ta=75˚C 60 25˚C –25˚C 40 20 0.3 1 3 10 30 100 0.5 0 30 100 Collector to base voltage VCB (V) Common emitter reverse transfer capacitance Cre (pF) 1.0 0.8 1.2 1.6 2.0 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 1 3 10 30 500 400 300 200 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) Cre — VCE 1.5 10 0.4 Base to emitter voltage VBE (V) VCB=10V Ta=25˚C Collector current IC (mA) 2.0 3 0 fT — I E 100 0 0.1 100 IE=0 f=1MHz Ta=25˚C 1 10 600 Cob — VCB 2.5 8 VCE=10V Collector current IC (mA) 3.0 6 120 Forward current transfer ratio hFE 10 0.3 20 hFE — IC 30 0.01 0.1 30 Collector to emitter voltage VCE (V) IC/IB=10 0.3 40 0 0 VCE(sat) — IC 100 –25˚C 10 Transition frequency fT (MHz) 40 Ta=75˚C 0.2mA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 50 Collector current IC (mA) IB=2.0mA 1.8mA 200 0 Collector output capacitance Cob (pF) VCE=10V 25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 Collector to emitter voltage VCE (V) –100