PL IA N T Features M ■ RoHS compliant* *R oH S CO ■ SMC package ■ Surface mount ■ High current capability CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AB (SMC) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter CD214C- Symbol Unit B320 B330 B340 B350 B360 0.5 0.5 0.5 0.7 0.7 Forward Voltage (Max.) (If = 3 A) VF Typical Junction Capacitance* CT 250 pF Reverse Current (Max.) at Rated VR) IR 0.5 mA V * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current Forward Current, Surge Peak (60 Hz, 1 cycle) Typical Thermal Resistance** Storage Temperature Junction Temperature CD214C- Symbol Unit B320 B330 B340 B350 B360 VRRM 20 30 40 50 60 V VR VRMS IO 20 30 40 50 60 V 14 21 28 35 42 V 3 A Isurge 100 A RΘJL 10 °C/W TSTG TJ -55 to +150 °C -55 to +125 °C ** Thermal resistance junction to lead. How to Order CD 214C - B 3 30 LF *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Common Code CD = Chip Diode Package 214C = SMC/DO-214AB Model B = Schottky Barrier Series Average Forward Current (IO) Code 3 = 3 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 40 = 40 V 60 = 60 V 30 = 30 V 50 = 50 V Terminations LF = 100 % Sn (RoHS Compliant) CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B B C C G F H Dimension SMC (DO-214AB) A 7.90 (0.311) B 4.00 (0.157) C 2.30 (0.091) D E Dimension SMC (DO-214AB) A 6.60 - 7.11 (0.260 - 0.280) B 5.59 - 6.22 (0.220 - 0.245) C 2.92 - 3.18 (0.115 - 0.125) D 0.15 - 0.31 ().006 - 0.112) E 7.75 - 8.13 (0.305 - 0.320) F 0.05 - 0.20 (0.002 - 0.008) G 2.01 - 2.62 (0.080 - 0.103) H 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) DIMENSIONS: MM (INCHES) Physical Specifications Case ........................................................................... Molded plastic Polarity.....................................................Indicated by cathode band Weight .................................................... 0.007 ounces / 0.21 grams Typical Part Marking MANUFACTURER'S TRADEMARK DATE CODE: YEAR = Y Week = WW YWW B3XX DEVICE CODE EXAMPLE: 304 DATE CODE = 4TH WEEK OF 2013 B340 DEVICE CODE = CD214C-B340 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves Forward Current Derating Curve Maximum Non-Repetitive Surge Current Peak Forward Surge Current (Amps) Average Forward Current (Amps) 5.0 4.0 3.0 2.0 1.0 Single Phase Half Wave 60 Hz Resistive or Inductive Load 0.0 25 50 75 100 150 125 120 100 175 80 60 40 Pulse Width 8.3 ms Single Half Sine-Wave (JEDEC Method) 20 0 1 2 5 Lead Temperature (°C) Typical Forward Characteristics 20 50 100 Typical Junction Capacitance 1000 10 Ta = 25 °C Pulsewidth: 300 µs B320 to B340 1.0 Capacitance (pF) Instantaneous Forward Current (Amps) 10 Number of Cycles at 60 Hz B350 to B360 0.1 100 F = 1 MHz Ta = 25 °C 0 .01 0 0.4 0.2 0.6 0.8 1.0 Instantaneous Forward Voltage (Volts) 0.1 1.0 4.0 10.0 100 Reverse Voltage (Volts) Typical Reverse Characteristics 100 Instantaneous Reverse Current (mA) 10 Ta = 125 °C Ta = 100 °C 1.0 0.1 0.01 Ta = 25 °C 0.001 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer End C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Direction of Feed Item MM (INCHES) Symbol Overall Tape Thickness T Tape Width W Reel Width W1 SMC (DO-214AB) 7.22 ± 0.10 (0.284 - 0.004) 8.11 ± 0.10 (0.319 - 0.004) 2.36 ± 0.10 (0.093 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 7.50 ± 0.10 (0.295 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.10 (0.079 - 0.004) 0.30 ± 0.10 (0.012 - 0.004) 16.00 ± 0.20 (0.630 - 0.008) 22.4 MAX. (0.882) -- 3,000 Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Quantity per Reel REV. 09/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.