Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.45 0.95 1.9±0.2 0.95 +0.1 0.4 –0.05 0.16 –0.06 +0.1 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1V (Ta=25˚C) Parameter Symbol Collector cutoff current 3 0.1 to 0.3 0.4±0.2 (Ta=25˚C) Parameter ■ Electrical Characteristics 1 0 to 0.1 ■ Absolute Maximum Ratings 0.65±0.15 2 +0.2 1.1 –0.1 ● 1.5 –0.05 0.8 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 ● 2.9 –0.05 ■ Features ● +0.25 0.65±0.15 Conditions min typ max Unit ICBO VCB = 60V, IE = 0 100 nA ICEO VCE = 60V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 Forward current transfer ratio hFE* VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 100 *1h FE1 V 1200 0.2 V MHz Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 Marking Symbol 1VR 1VS 1 Transistor 2SD1149 PC — Ta IC — VCE 60 160 120 80 IB=100µA 80µA 60µA 50µA 40µA 50 40 30µA 30 20µA 20 10µA 40 Ta=75˚C –25˚C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) — IC Ta=75˚C 1200 3 1 0.3 Ta=75˚C 0.1 –25˚C 0.03 1 3 10 30 25˚C –25˚C 900 600 300 0 0.1 100 Collector current IC (mA) 0.3 Noise voltage NV (mV) 4 3 2 1 0 1 3 10 10 30 160 120 80 40 0 – 0.1 – 0.3 100 –1 30 100 Collector to base voltage VCB (V) 80 –30 –100 NV — VCE Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 –10 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –3 Emitter current IE (mA) NV — IC 100 IE=0 f=1MHz Ta=25˚C 5 3 2.0 VCB=10V Ta=25˚C Collector current IC (mA) Cob — VCB 6 1 Noise voltage NV (mV) 0.3 1.6 200 1500 10 1.2 VCE=10V Forward current transfer ratio hFE 30 0.8 fT — I E 1800 IC/IB=10 0.01 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 25˚C 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 60 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 240 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V)