PANASONIC LN66F

Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
Unit : mm
ø5.0±0.2
7.65±0.2
Not soldered
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
1.0
For light source of remote control systems
13.5±1.0
11.5±1.0
3.6±0.3
1.0
Emitted light spectrum suited for silicon photodetectors
Narrow directivity : θ = 15 deg. (typ.)
Transparent epoxy resin package
2-1.0±0.15
2-0.6±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
*
Symbol
Ratings
Unit
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP*
1.5
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
– 40 to +100
˚C
0.6±0.15
ø6.0±0.2
2.54
2
1
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
*
Symbol
Conditions
min
typ
Radiant intensity at center
Ie
IF = 50mA
Peak emission wavelength
λP
IF = 50mA
Spectral half band width
∆λ
IF = 50mA
50
Forward voltage (DC)
VF
IF = 50mA
1.35
*
max
13
Unit
mW/sr
950
nm
nm
1.50
V
Pulse forward voltage
VFP
IFP = 1.0A
3.0
V
Reverse current (DC)
IR
VR = 3V
10
µA
Capacitance between pins
Ct
VR = 0V, f = 1MHz
20
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
15
deg.
f = 100 Hz, Duty cycle = 0.1 %
1
Infrared Light Emitting Diodes
LN66F
IF — Ta
IFP — Duty cycle
60
tw = 10µs
Ta = 25˚C
Ta = 25˚C
70
30
20
10
10
IF (mA)
Pulse forward current
40
1
Forward current
50
IFP (A)
IF (mA)
10 2
Allowable forward current
IF — VF
80
10 –1
60
50
40
30
20
10 –2
10
20
40
60
80
10 –3
10 –2
100
10 –1
Ambient temperature Ta (˚C )
∆Ie — IFP
VF (V)
10
(2)
10
10 2
10 3
10mA
0.8
0.4
0
– 40
10 4
λP — Ta
1000
0
40
IF = 50mA
80
120
1
10 –1
– 40
0
40
Relative radiant intensity (%)
920
120
Spectral characteristics
Directivity characteristics
0˚
IF = 50mA
Ta = 25˚C
80
80
70
60
60
50
40
40
30
20
20
10˚
20˚
100
90
940
80
Ambient temperature Ta (˚C )
IF = 50mA
960
1.6
Ambient temperature Ta (˚C )
100
980
1.2
∆Ie — Ta
1.2
Pulse forward current IFP (mA)
Peak emission wavelength λP (nm)
0.8
10
10 –1
1
0.4
Forward voltage VF (V)
IF = 50mA
Forward voltage
Relative radiant intensity ∆Ie
(1)
10 –2
0
VF — Ta
10 2
1
0
10 2
10
1.6
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
10 3
1
Duty cycle (%)
Relative radiant intensity (%)
0
Relative radiant intensity ∆Ie
0
– 25
30˚
40˚
50˚
60˚
70˚
80˚
90˚
900
– 40
0
40
80
Ambient temperature Ta (˚C )
2
120
0
860
900
940
980
1020 1060 1100
Wavelength λ (nm)
LN66F
Infrared Light Emitting Diodes
Frequency characteristics
10
Ta = 25˚C
Modulation output
1
10 –1
10 –2
10 –3
10
10 2
Frequency
10 3
10 4
f (kHz)
3