Infrared Light Emitting Diodes LNA4401L GaAlAs Infrared Light Emitting Diode Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) 2-ø0.45±0.05 TO-18 standard type package 2.54±0.25 0 0± 1. 1. 0± 0 3˚ 45± .1 5 .2 Absolute Maximum Ratings (Ta = 25˚C) Parameter * 2 1 Symbol Ratings Unit Power dissipation PD 190 mW Forward current (DC) IF 100 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Anode 2: Cathode ø5.75 max. f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter min typ 6 10 mW IF = 50mA 860 nm IF = 50mA 40 nm VF IF = 100mA 1.6 IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Half-power angle θ The angle in which radiant intencity is 50% Cutoff frequency fC* Radiant power * Symbol Conditions PO IF = 50mA Peak emission wavelength λP Spectral half band width ∆λ Forward voltage (DC) Reverse current (DC) max Unit 1.9 V 10 µA pF 6 deg. IFP = 50mA + 10mAp-p 20 MHz Frequency when modulation optical power decreases by 3dB from 1MHz. PO(fCMHz) 10 log =–3 P O (1MHz) ( ) 1 Infrared Light Emitting Diodes LNA4401L IFP — Duty cycle 10 2 60 40 tw = 10µs Ta = 25˚C Pulse forward current IFP (mA) IFP (A) 80 Pulse forward current 10 1 10 –1 20 0 – 25 0 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) 1 10 –1 10 2 50mA 1.4 1.0 λP — Ta 2 0 40 80 IF = 50mA 120 1 10 –1 – 40 0 40 Relative radiant intensity (%) 840 80 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 860 5 Ambient temperature Ta (˚C ) IF = 50mA 880 4 Ambient temperature Ta (˚C ) 100 900 3 ∆PO — Ta IF = 100mA 0.6 – 40 10 3 920 λP (nm) 1 10 1.8 Pulse forward current IFP (mA) Peak emission wavelength 0 ∆PO VF (V) Forward current ∆PO Relative radiant power (2) 10 1 VF — Ta (1) 1 10 Forward voltage VF (V) 2.2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 10 10 –2 10 2 Duty cycle (%) ∆PO — IFP 10 2 tw = 10µs f = 100Hz Ta = 25˚C 10 3 10 –1 10 2 10 Relative radiant power IF (mA) Allowable forward current 100 IFP — VF 10 4 Relative radiant intensity (%) IF — Ta 120 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 820 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 750 800 850 900 950 1000 1050 Wavelength λ (nm)