Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features High-power output, high-efficiency : PO = 3.5 mW (typ.) 2.8 1.8 1.0 Suited for use with silicon photodetectors 12.8 min. 10.0 min. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter * Symbol Ratings Unit Power dissipation PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP * 1 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 2.54 1.2 R1.75 1 2 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ Unit Radiant power PO IF = 50mA 3.5 mW Peak emission wavelength λP IF = 50mA 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 35 deg. IF — Ta 1.8 max IFP — Duty cycle 10 µA 80 Ta = 25˚C 10 2 Ta = 25˚C 70 30 20 10 10 IF (mA) 40 1 Forward current IFP (A) 50 Pulse forward current IF (mA) V IF — VF 60 Allowable forward current nm 1.5 10 –1 60 50 40 30 20 10 –2 10 0 – 25 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 10 –3 10 –2 10 –1 1 Duty cycle (%) 10 10 2 0 0 0.4 0.8 1.2 1.6 Forward voltage VF (V) 1 Infrared Light Emitting Diodes LN55 ∆PO — IF IFP — VF tw = 10µs Duty Cycle = 0.1% Ta = 25˚C Ta = 25˚C 10 2 10 1 Relative radiant power ∆PO 100 10 3 10 –1 ∆PO — IFP 10 4 120 Relative radiant power ∆PO Pulse forward current IFP (mA) 10 4 80 60 40 (1) 10 3 (2) (3) (4) (5) 10 2 tw = 10µs (1) f = 100Hz (2) f = 21kHz (3) f = 42kHz (4) f = 60kHz (5) DC Ta = 25˚C 10 20 0 1 2 3 Forward voltage 4 0 5 0 10 VF (V) 20 30 Forward current 40 50 1 10 60 IF (mA) 10 2 ∆PO — Ta VF — Ta 1000 10mA 0.8 0.4 0 – 40 0 40 80 Ambient temperature 120 Ta (˚C ) Spectral characteristics 10 2 10 1 – 40 0 40 Ambient temperature 80 980 960 940 920 900 – 40 120 Ta (˚C ) 10˚ 0 40 80 Ambient temperature Directivity characteristics 0˚ 100 IF = 50mA Peak emission wavelength λP (nm) IF = 50mA Relative radiant power ∆PO Forward voltage VF (V) IF = 50mA 1.2 Frequency characteristics 20˚ 10 2 Ta = 25˚C 60 60 50 40 40 30 20 20 30˚ 40˚ 50˚ 60˚ 70˚ 10 Modulation output 80 70 Relative radiant intensity(%) Relative radiant intensity (%) 90 120 Ta (˚C ) 100 80 10 4 IFP (mA) λP — Ta 10 3 1.6 10 3 Pulse forward current 1 10 –1 80˚ 90˚ 0 860 900 940 980 Wavelength 2 1020 1060 1100 λ (nm) 10 –2 1 10 Frequency 10 2 f (kHz) 10 3