PANASONIC LN55

Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
4.2±0.3
2.3 1.9
4.5±0.3
4.8±0.3
2.4 2.4
Not soldered
ø3.5±0.2
Features
High-power output, high-efficiency : PO = 3.5 mW (typ.)
2.8
1.8
1.0
Suited for use with silicon photodetectors
12.8 min.
10.0 min.
Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
High-speed modulation capability
2-0.98±0.2
2-0.45±0.15
0.45±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
*
Symbol
Ratings
Unit
Power dissipation
PD
75
mW
Forward current (DC)
IF
50
mA
Pulse forward current
IFP
*
1
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
2.54
1.2
R1.75
1
2
1: Cathode
2: Anode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
Radiant power
PO
IF = 50mA
3.5
mW
Peak emission wavelength
λP
IF = 50mA
950
nm
Spectral half band width
∆λ
IF = 50mA
50
Forward voltage (DC)
VF
IF = 50mA
Reverse current (DC)
IR
VR = 3V
Capacitance between pins
Ct
VR = 0V, f = 1MHz
50
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
35
deg.
IF — Ta
1.8
max
IFP — Duty cycle
10
µA
80
Ta = 25˚C
10 2
Ta = 25˚C
70
30
20
10
10
IF (mA)
40
1
Forward current
IFP (A)
50
Pulse forward current
IF (mA)
V
IF — VF
60
Allowable forward current
nm
1.5
10 –1
60
50
40
30
20
10 –2
10
0
– 25
0
20
40
60
80
Ambient temperature Ta (˚C )
100
10
–3
10 –2
10 –1
1
Duty cycle (%)
10
10 2
0
0
0.4
0.8
1.2
1.6
Forward voltage VF (V)
1
Infrared Light Emitting Diodes
LN55
∆PO — IF
IFP — VF
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
Ta = 25˚C
10 2
10
1
Relative radiant power ∆PO
100
10 3
10 –1
∆PO — IFP
10 4
120
Relative radiant power ∆PO
Pulse forward current IFP (mA)
10 4
80
60
40
(1)
10 3
(2)
(3)
(4)
(5)
10 2
tw = 10µs
(1) f = 100Hz
(2) f = 21kHz
(3) f = 42kHz
(4) f = 60kHz
(5) DC
Ta = 25˚C
10
20
0
1
2
3
Forward voltage
4
0
5
0
10
VF (V)
20
30
Forward current
40
50
1
10
60
IF (mA)
10 2
∆PO — Ta
VF — Ta
1000
10mA
0.8
0.4
0
– 40
0
40
80
Ambient temperature
120
Ta (˚C )
Spectral characteristics
10 2
10
1
– 40
0
40
Ambient temperature
80
980
960
940
920
900
– 40
120
Ta (˚C )
10˚
0
40
80
Ambient temperature
Directivity characteristics
0˚
100
IF = 50mA
Peak emission wavelength λP (nm)
IF = 50mA
Relative radiant power ∆PO
Forward voltage VF (V)
IF = 50mA
1.2
Frequency characteristics
20˚
10 2
Ta = 25˚C
60
60
50
40
40
30
20
20
30˚
40˚
50˚
60˚
70˚
10
Modulation output
80
70
Relative radiant intensity(%)
Relative radiant intensity (%)
90
120
Ta (˚C )
100
80
10 4
IFP (mA)
λP — Ta
10 3
1.6
10 3
Pulse forward current
1
10 –1
80˚
90˚
0
860
900
940
980
Wavelength
2
1020 1060 1100
λ (nm)
10 –2
1
10
Frequency
10 2
f (kHz)
10 3