Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm Features High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. 12.7 min. 2.0±0.1 0.2±0.05 3.0±0.3 For optical control systems 2-ø0.45±0.05 ±0 .1 5 .1 +0 0.1 – 0 1. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 1. 0 Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors 45± 3˚ ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 High-speed modulation 2 1 Absolute Maximum Ratings (Ta = 25˚C) 2.54±0.2 Parameter * Symbol Ratings Unit Power dissipation PD 160 mW Forward current (DC) IF 100 mA 1.5 A 3 V * Pulse forward current IFP Reverse voltage (DC) VR Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Symbol Conditions min typ 5 10 max Unit PO IF = 100mA Peak emission wavelength λP IF = 100mA 950 nm Spectral half band width ∆λ IF = 100mA 50 nm Forward voltage (DC) VF IF = 100mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Rise time tr Fall time tf Half-power angle θ IFP = 100mA The angle in which radiant intencity is 50% mW 1.6 V 10 µA 60 pF 1 µs 1 µs 100 deg. 1 Infrared Light Emitting Diodes LN152 IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C Pulse forward current 60 40 20 0 20 40 60 80 10 –1 10 –2 10 –3 10 –2 100 IFP (mA) 1 10 –1 Ambient temperature Ta (˚C ) 0 1 3 4 5 10 IF = 50mA IF = 100mA 10 2 1.2 50mA 10mA (1) Forward voltage 10 2 ∆PO — Ta VF — Ta VF (V) ∆PO Relative radiant power 10 –1 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C (2) 1 1 10 –2 10 2 10 10 Duty cycle (%) ∆PO — IFP 10 3 1 10 2 ∆PO 0 – 25 10 Relative radiant power Allowable forward current 80 tw = 10µs f = 100Hz Ta = 25˚C 10 3 Pulse forward current IFP (A) IF (mA) 10 2 100 IFP — VF 0.8 0.4 1 10 –1 1 10 10 2 10 3 0 – 40 10 4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 Relative radiant intensity (%) λP (nm) Peak emission wavelength 940 920 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 10 –1 – 40 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 100mA Ta = 25˚C IF = 100mA 960 120 Ambient temperature Ta (˚C ) 100 980 80 80 80 60 40 60 10˚ 20 20˚ 30˚ 40˚ 100 Relative radiant intensity(%) 10 –2 50˚ 60˚ 70˚ 80˚ 90˚ 40 20 0 800 850 900 950 1000 1050 1100 Wavelength λ (nm)