SENSITRON SEMICONDUCTOR SD090SE45A/B/C Technical Data Data Sheet 4951, Rev.A SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave Max. 45 7.5 Units V A 140 A TJ = 25 C, IAS = 2.0 A, L = 6.5 mH IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR - 13.0 mJ 2.0 A -65 to +125 -65 to +125 C C Max. 0.51 0.47 800 Units V V A 120 mA 430 pF Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 7.5A, Pulse, TJ = 25 C @ 7.5A, Pulse, TJ = 125 C @VR = 45V, Pulse, TJ = 25 C @VR = 45V, Pulse, TJ = 100 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) (1) in SHD package ©2004 Sensitron Semicondcutor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SD090SE45A/B/C Technical Data Data Sheet 4951, Rev. A Mechanical Dimensions: In Inches / mm Bottom side metalization Ag - 30 kÅ minimum. Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. 0.081 0.003 0.090 0.003 (2.06 0.077) (2.29 0.077) Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 0.026) for Al top; Dimension H = 0.0155 ± 0.001 (0.39 0.026) for Ag top. Gold Option Available for Top and/or Bottom Metalization: Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA) H Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) 102 Instantaneous Forward Current - IF (A) 101 125 °C 125 °C 100 °C 101 75 °C 100 50 °C 10-1 25 °C 100 °C 10-2 0 10 25 °C 20 30 40 Reverse Voltage - VR (V) 50 100 0.0 0.2 0.4 0.6 Forward Voltage Drop - VF (V) 0.8 Junction Capacitance - CT (pF) Typical Junction Capacitance 300 280 260 240 220 200 180 160 140 120 100 0 10 20 30 40 Reverse Voltage - VR (V) 50 ©2004 Sensitron Semicondcutor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SD090SE45A/B/C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2004 Sensitron Semicondcutor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]