4951

SENSITRON
SEMICONDUCTOR
SD090SE45A/B/C
Technical Data
Data Sheet 4951, Rev.A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings(1):
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
Max.
45
7.5
Units
V
A
140
A
TJ = 25 C, IAS = 2.0 A,
L = 6.5 mH
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
-
13.0
mJ
2.0
A
-65 to +125
-65 to +125
C
C
Max.
0.51
0.47
800
Units
V
V
A
120
mA
430
pF
Electrical Characteristics(1):
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
CT
Condition
@ 7.5A, Pulse, TJ = 25 C
@ 7.5A, Pulse, TJ = 125 C
@VR = 45V, Pulse,
TJ = 25 C
@VR = 45V, Pulse,
TJ = 100 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
(1) in SHD package
©2004 Sensitron Semicondcutor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SENSITRON
SEMICONDUCTOR
SD090SE45A/B/C
Technical Data
Data Sheet 4951, Rev. A
Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
0.081 0.003 0.090 0.003
(2.06 0.077) (2.29 0.077)
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27
0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39
0.026) for Ag top.
Gold Option Available for Top and/or Bottom Metalization:
Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA)
H
Typical Forward Characteristics
Typical Reverse Characteristics
Instantaneous Reverse Current - IR (mA)
102
Instantaneous Forward Current - IF (A)
101
125 °C
125 °C
100 °C
101
75 °C
100
50 °C
10-1
25 °C
100 °C
10-2
0
10
25 °C
20
30
40
Reverse Voltage - VR (V)
50
100
0.0
0.2
0.4
0.6
Forward Voltage Drop - VF (V)
0.8
Junction Capacitance - CT (pF)
Typical Junction Capacitance
300
280
260
240
220
200
180
160
140
120
100
0
10
20
30
40
Reverse Voltage - VR (V)
50
©2004 Sensitron Semicondcutor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SENSITRON
SEMICONDUCTOR
SD090SE45A/B/C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
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equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement .
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the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
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a value exceeding the absolute maximum rating.
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©2004 Sensitron Semicondcutor 221 West Industry Court  Deer Park, NY 11729-4681
 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]