Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm ■ Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 V –55 VCEO emitter voltage 2SA1531A Unit +0.1 2SA1531A 2 0.15–0.05 2SA1531 base voltage 3 (Ta=25˚C) Symbol Collector to 1 0 to 0.1 Parameter 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 0.425 2.0±0.2 ● 2.1±0.1 Low noise voltage NV. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : F(2SA1531) H(2SA1531A) (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = –10V, IE = 0 –100 nA ICEO VCE = –10V, IB = 0 –1 µA VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE*1 VCE = –5V, IC = –2mA 180 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA*2 Base to emitter voltage VBE VCE = –1V, IC = –100mA*2 Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz Collector cutoff current Collector to base 2SA1531 voltage 2SA1531A Collector to emitter 2SA1531 voltage 2SA1531A Noise voltage *1h FE1 V –55 –35 V –55 V 700 – 0.7 NV S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SA1531 FR FS FT 2SA1531A HR HS HT V 150 *2 R V –1.0 MHz Rg = 100kΩ, Function = FLAT Rank – 0.6 80 VCE = –10V, IC = –1mA, GV = 80dB Rank classification Marking Symbol –35 mV Pulse measurement 1 2SA1531, 2SA1531A Transistor PC — Ta IC — VCE –160 IC — IB –160 Ta=25˚C VCE=–5V Ta=25˚C –140 200 IB=–350µA –120 160 120 80 –120 –300µA –250µA –100 –200µA –80 –150µA –60 –100µA –40 –20 –80 –60 –40 –20 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 0 Collector to emitter voltage VCE (V) IB — VBE – 0.1 IC — VBE –800 25˚C Collector current IC (mA) –100 Base current IB (µA) –400 –300 –200 – 0.4 –100 VCE=–5V –700 –500 – 0.3 Ta=75˚C – 0.5 VCE(sat) — IC –120 VCE=–5V Ta=25˚C –600 – 0.2 Base current IB (mA) –25˚C –80 –60 Collector to emitter saturation voltage VCE(sat) (V) 0 IC/IB=10 –30 –10 –3 –1 – 0.3 –40 Ta=75˚C 25˚C – 0.1 –20 –100 –25˚C – 0.03 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 Base to emitter voltage VBE (V) – 0.4 – 0.8 –1.2 hFE — IC Transition frequency fT (MHz) Ta=75˚C 25˚C –25˚C 200 100 400 350 300 250 200 150 100 50 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 –3 –10 –30 –100 20 VCB=–5V Ta=25˚C 450 500 –1 Collector current IC (mA) Cob — VCB VCE=–5V 0 – 0.1 – 0.3 – 0.01 – 0.1 – 0.3 fT — IE 500 300 –2.0 Base to emitter voltage VBE (V) 600 400 –1.6 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE –100 –50µA 40 0 2 Collector current IC (mA) –140 Collector current IC (mA) Collector power dissipation PC (mW) 240 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 18 16 14 12 10 8 6 4 2 0 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 2SA1531, 2SA1531A Transistor NV — VCE NV — VCE 160 Rg=100kΩ 100 80 22kΩ 40 4.7kΩ 240 Rg=100kΩ 180 120 22kΩ 60 –10 –30 0 –1 –100 Collector to emitter voltage VCE (V) –3 –30 180 Rg=100kΩ 22kΩ – 0.03 – 0.3 –1 VCE=–10V GV=80dB Function=RIAA 120 100 80 60 IC=–1mA 40 240 180 120 60 IC=–1mA – 0.1mA 20 –1 – 0.3 300 VCE=–10V GV=80dB Function=FLAT – 0.5mA – 0.1mA 0 Collector current IC (mA) – 0.1 Collector current IC (mA) NV — Rg – 0.5mA 4.7kΩ – 0.1 22kΩ 40 0 – 0.01 –100 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) –10 140 240 – 0.03 60 20 160 VCE=–10V GV=80dB Function=RIAA 0 – 0.01 Rg=100kΩ 80 NV — Rg 300 60 100 Collector to emitter voltage VCE (V) NV — IC 120 120 4.7kΩ 4.7kΩ 20 –3 VCE=–10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) Noise voltage NV (mV) Noise voltage NV (mV) 120 60 160 IC=–1mA GV=80dB Function=FLAT IC=–1mA GV=80dB Function=FLAT 140 0 –1 NV — IC 300 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3