TISP61060

*R
oH
V SC
AV ER OM
AI SIO PL
LA N IA
BL S NT
E
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61060 Gated Protector Series
Dual Voltage-Programmable Protectors
– Third Generation Design using Vertical Power Technology
– Wide -5 V to -85 V Programming Range
– High 150 mA min. Holding Current
Reduced VBAT Supply Current
– Triggering Current is Typically 50x Lower
– Negative Value Power Induction Current Removes Need
for Extra Protection Diode
D Package (Top View)
(Tip)
K1
(Gate) G
1
8
K1 (Tip)
2
7
A
(Ground)
(Ground)
NC
3
6
A
(Ring) K2
4
5
K2 (Ring)
MD6XANB
Rated for LSSGR & FCC Surges
NC - No internal connection
Terminal typical application names shown in
parenthesis
ITSP
Standard
Wave Shape
LSSGR
10/1000 µs
30
FCC Part 68
10/160 µs
45
LSSGR
2/10 µs
50
A
P Package (Top View)
Surface Mount and Through-Hole Options
– TISP61060P for Plastic DIP
– TISP61060D for Small-Outline
– TISP61060DR for Taped and Reeled Small-Outline
(Tip)
K1
1
8
K1 (Tip)
(VS )
G
2
7
A
(Ground)
NC
3
6
A
(Ground)
(Ring) K2
4
5
K2 (Ring)
Functional Replacements for
Part Numbers
Functional
Functional
Replacement
Replacement
With Lead Free
With Standard
Termination Finish Termination Finish
TCM1030P, TCM1060P,
LB1201AB
TISP61060P
TISP61060P-S
TCM1030D, TCM1060D,
LB1201AS
TCM1030DR, TCM1060DR
TISP61060D
TISP61060D-S
TISP61060DR
TISP61060DR-S
MD6XAPA
NC - No internal connection
Terminal typical application names shown in
parenthesis
Device Symbol
K1
G
K2
...................................................... UL Recognized Components
Description
The TISP61060 is a dual forward-conducting buffered p-gate
overvoltage protector. It is designed to protect monolithic SLICs
(Subscriber Line Interface Circuits), against overvoltages on the
telephone line caused by lightning, a.c. power contact and
induction. The TISP61060 limits voltages that exceed the SLIC
supply rail voltage.
A
The SLIC line driver section is typically powered from 0 V (ground)
and a negative voltage in the region of -10 V to -70 V. The protector
gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection
voltage will track the negative supply voltage, the overvoltage stress on
the SLIC is minimized. (See Applications Information.)
SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the
voltage, VGG, applied to the G terminal.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC
negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state
condition. As the current subsides the high holding current of the crowbar helps prevent d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by
power cross and induction.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
Absolute Maximum Ratings
Symbol
Value
Unit
Repetitive peak off-state voltage, VGK = 0, -40 °C ≤ TJ ≤ 85 °C
Rating
VDRM
-100
V
Repetitive peak gate-cathode voltage, VKA = 0, -40 °C ≤ TJ ≤ 85 °C
VGKRM
-85
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 µs
30
ITSP
10/160 µs
A
45
2/10 µs
50
Non-repetitive peak on-state current (see Notes 1 and 2)
60 Hz sine-wave, 25 ms
ITSM
6
Continuous on-state current (see Note 2)
ITM
0.3
Continuous forward current (see Note 2)
IFM
0.3
A
Operating free-air temperature range
TA
-40 to +85
°C
60 Hz sine-wave, 2 s
A rms
1
A
TJ
-40 to +150
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead temperature 1.6 mm (1/16 inch) from case for 10 s
TL
260
°C
Junction temperatur e
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice
the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature.
Recommended Operating Conditions
Component
CG
Min
Gate decoupling capacitor
Typ
Max
100
Unit
nF
Electrical Characteristics, -40 °C ≤ TJ ≤ 85 °C (Unless Otherwise Noted)
Parameter
ID
V(BO)
IS
VT
Test Conditions
Min
Typ
Max
Unit
TJ = 25 °C
5
µA
TJ = 85 °C
50
µA
Off-state current
VD = -85 V, VGK = 0
dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG = -50 V
-53
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300 Ω, VGG = -65 V
-68
IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG = -50 V
-55
Switching current
On-state voltage
dv/dt = - 250 V/ms, Source Resistance = 300 Ω, VGG = -50 V
-100
V
mA
IT = 1 A
3
IT = 10 A
4
IT = 16 A
5
IT = 30 A
7
V
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
Electrical Characteristics, -40 °C ≤ TJ ≤ 85 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
Min
Typ
IF = 1 A
2
IF = 10 A
4
IF = 16 A
5
VF
Forward voltage
IH
Holding current
IT = -1 A, di/dt = +1A/ms , VGG = -50 V
IGAS
Gate reverse current
VGG = -85 V, K and A terminals connected
IGT
Gate trigger current
IT = -1 A, t p(g) ≥ 20 µs, VGG = -50 V
IF = 30 A
dv/dt
CO
Critical rate of rise of
off-state voltage
Anode-cathode offstate capacitance
Max
Unit
V
5
-150
mA
TJ = 25 °C
5
TJ = 85 °C
50
µA
15
mA
VGG = -50 V, (see Note 3)
-1000
f = 1 MHz, Vd = 0.1 V, IG = 0, (see Note 4)
µA
V/µs
VD = 0 V
85
pF
VD = -50 V
10
pF
NOTES: 3. Linear rate of rise, maximum voltage limited to 80 % VGG .
4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter
RθJA
Junctio n to free air thermal resistance
Test Conditions
Ptot = 0.8 W, TA = 25 °C
5
cm 2,
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
FR4 PCB
Min
Typ
Max
D Package
170
P package
125
Unit
°C/W
TISP61060 Gated Protector Series
Parameter Measurement Information
+i
Quadrant I
IFSP (= |ITSP|)
Forward
Conduction
Characteristic
IFSM (= |ITSM|)
IF
VF
VGK(BO)
VGG
-v
VD
ID
I(BO)
IH
IS
V(BO)
VS
+v
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PM6XAAA
Figure 1. Voltage-Current Characteristic
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
DEVICE PARAMETERS
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage
breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device
characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and
stabilized.
Programmable (gated) overvoltage protectors are relatively new and require additional parameters to specify their operation. Similar to the
fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote
an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single
device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols
have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability
will be assumed from the use of this guide.
Cross-Reference for TISP61060 and TCM1030/60
Data Sheet
Alternative
Symbol
Symbol
Non-repetitive peak on-state pulse current
ITSP
-
Non-repetitive peak surge current
Non-repetitive peak on-state current
ITSM
-
Non-repetitive peak surge current,10 ms
Non-repetitive peak on-state current
ITSM
-
VF
VCF
Forward clamping voltage
Forward current
IF
IFM
Peak forward current
On-state voltage
VT
VC
Reverse clamping voltage
TISP61060 Parameter
Ratings & Characteristics
Alternative Parameter
TCM1060, TCM1030
Forward voltage
Continuous 60-Hz sinewave, 2 s
On-state current
IT
ITM
Peak reverse current
Switching current
IS
Itrip
Trip current
Breakover voltage
V(BO)
Vtrip
Trip voltage
Gate reverse current (with A and K terminals connected)
IGAS
ID
Stand-by current, TIP & RING at GND
Off-state current
ID
ID
Stand-by current, TIP & RING at VS
Off-state voltage
VD
VS
Supply voltage
VGK(BO)
VOS
VG
VS
Supply voltage
CO
Coff
Off-state capacitance
Cathode 1
K1
Tip
Tip
Cathode 2
K2
Ring
Anode
A
GND
Gate
G
VS
Gate-cathode breakover voltage
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
Off-state capacitance
Terminals
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Transient overshoot voltage
TCM1060, TCM1030
Ring
Ground
Supply voltage
TISP61060 Gated Protector Series
Cross-Reference for TISP61060 and LB1201AB
Data Sheet
Alternative
Symbol
Symbol
Non-repetitive peak on-state pulse curr ent
ITSP
IP
Pulse current
Non-repetitive peak on-state cu rrent
ITSM
IP
RMS pulse current, 60 Hz
VT
VON
TISP 61060 Parameter
Alternative Parameter
Ratings & Characteristics
On-state voltage
LB1201AB
On-state voltage
Switching current
IS
It
Trip current
Breakover voltage
V(BO)
VT
Trip voltage
Maximum continuous on- state current
ITM
IC
On-state current
Maximum continuous forwar d current
IFM
IC
On-state current
VG
VS
Supply voltage
CO
COFF
Cathod e 1
K1
Tip
Cathode 2
K2
Ring
Ring
Anode
A
GND
Ground
Gate
G
VS
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
Off-state capacitance
Off-state capacitance
Terminals
LB1201AB
Tip
Supply voltage
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, TJ. Hence a characteristic
value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on
commercial testers, which generally minimize the temperature rise caused by testing.
Gated Protector Evolution and Characteristics
This section covers three topics. First, it is explained why gated protectors are needed. Second, the performance of the original IC (integrated
circuit) based version is described. Third, the performance improvements given by the TISP61060 are detailed.
Purpose of Gated Protectors
Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. As the SLIC was usually powered
from a fixed voltage negative supply rail, the limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example
of a fixed voltage SLIC protector.
SLICs have become more sophisticated. To minimize power consumption, some designs automatically adjust the supply voltage, VBAT, to a
value that is just sufficient to drive the required line current. For short lines the supply voltage would be set low, but for long lines, a higher
supply voltage would be generated to drive sufficient line current. The optimum protection for this type of SLIC would be given by a protection
voltage which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the SLIC supply, Figure 2.
This gated (programmable) protection arrangement minimizes the voltage stress on the SLIC, no matter what value of supply voltage.
IC BASED
SLIC
PROTECTOR
TIP
WIRE
600 Ω
SLIC
R1
50 Ω
Th4
GENERATOR
SOURCE
RESISTANCE
Th5
SWITCHING MODE
POWER SUPPLY
Tx
R2
50 Ω
600 Ω
RING
WIRE
A.C.
GENERATOR
0 - 600 Vrms
C1
100 nF
IG
D2 C2
ISLIC
IBAT
VBAT
D1
AI6XAD
Figure 2. Simplified IC Based SLIC Protector Circuit
IC Based Protectors
In 1986, an IC based gated protector was proposed (A 90 V Switching Regulator and Lightning Protection Chip Set, Robert K. Chen, Thomas
H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State Circuits Conference, February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T Microelectronics LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device.
This implementation consisted of four diodes and two high holding current thyristors. Positive overvoltages on the line wires are clipped to
ground by forward conduction of the wire to ground diodes. Negative overvoltages are initially clipped close to the SLIC negative supply rail,
VBAT, by conduction of the thyristor cathode-gate and gate series diode. This means that the protection voltage level for slow wave forms will
be about 1.5 V lower than the SLIC supply voltage. If sufficient current is available from the overvoltage, then the thyristor will switch into a
low voltage on-state condition. When the thyristor crowbars, the two series gate diodes prevent the SLIC supply from being shorted to ground
via the thyristor gate. As the overvoltage subsides the high holding current of the crowbar prevents d.c. latchup (see Figure 1).
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
Impulse Protection Performance
The impulse protection voltage will be the sum of the gate supply (VBAT) and the impulse peak gate-cathode voltage (VGK(BO)). Capacitor C1
provides the pulse of gate current that occurs during fast rising impulses. The protection voltage will be increased if there is a long connection
between the gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse (e.g. 2/10), the gate current (IG) is the
same as the cathode current (IK ). Rates of 70 A/µs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To minimize this
inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in
the protector cathode wiring can increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the
protector as shown in Figure 2.
10
0
Voltage - V
-10
-20
VK
-30
VG
-40
-50
-60
0
5
10
Time - ms
15
20
IK - Cathode Current - mA
75
500
IG
50
250
25
0
0
-25
-250
IK
-50
-500
IG - Gate Current - mA
100
750
-75
-750
-100
0
5
10
Time - ms
15
20
AI6XAG
Figure 3. IC Protector Power Cross Wave Forms
AC Protection Performance
Figure 2 shows a typical a.c. power cross test circuit. A variable voltage a.c. source is applied to the line card via 600 Ω series resistors. On
the line card there are further series resistors R1 and R2. These resistors provide overcurrent protection by fusing or going high resistance
under high current a.c. conditions.
Figure 3 shows the gate and cathode a.c. power line cross voltage and current wave forms of the IC based protector. Positive voltages are
clipped at about +1 V by diode conduction. Negative voltages are clipped to about -52 V as the SLIC supply voltage was -50 V. Sufficient
current (200 mA) was available to cause the thyristor to switch into the low-voltage on-state condition. At the end of the negative half cycle,
the thyristor switches off when the current falls below the holding current value (300 mA). Switch-off and re-clipping at -52 V causes a second
pulse of gate current. The wire current drawn by the protector is quasi-sinusoidal.
During the positive a.c. voltage period (diode clipping) there is no gate current. During the negative a.c. voltage period there are two triangular
pulses of gate current, which peak at about 80 mA. This is current which flows into the gate terminal as indicated by the IG current arrow in
Figure 2. This direction of current charges the VBAT supply. This would not be a problem if the VBAT supply was a rechargeable battery.
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
AC Protection Performance (continued)
However, often the supply is generated from a switching mode power supply or the SLIC supply feed has a series diode which blocks reverse
(charging) current flow to the battery. In these cases the supply can only sink current in the direction shown by the IBAT arrow in Figure 2.
Unless the SLIC current, ISLIC, is equal or greater than IG the value of V BAT will increase, possibly to a level which causes destruction of the SLIC.
10
0
Voltage - V
-10
VK
-20
-30
VG
-40
-50
-60
0
5
10
Time - ms
15
20
100
80
200
IG
60
40
100
20
0
0
-20
-100
-40
IK
-60
-200
IG - Gate Current - mA
I - Cathode Current - mA
K
300
-80
-300
-100
0
5
10
15
Time - ms
20
AI6XAH
Figure 4. IC Protector High Impedance Power Cross Clipping Wave Forms
The maximum average value of IG occurs when the thyristor only clips the voltage and the peak cathode current is just beginning to approach
the switching (IS ) value, see Figure 4. The average current is maximized under high source impedance conditions (e.g. 600 Ω). In the case of
the LB1201AB, it is recommended that the supply should be able to absorb 700 mA of “wrong way” current. If the supply cannot absorb the
current then a shunt breakdown diode is recommended to provided a path for the gate current to ground (D2 in Figure 2). High power diodes
are expensive, so diode D2 is usually low power, purposely selected to fail under this a.c. condition and protect the SLIC.
TISP61060 Buffered Gate Protector
The TISP61060 improves on the original IC based design in three ways, Figure 5. First, the thin lateral IC structure has been changed to a
vertical power device structure for increased area efficiency and greater energy capability. Second, the series gate diodes have been changed
to transistor buffers. The maximum current injected into the gate supply is then reduced by the transistors gain factor (HFE ). Third, some
current from the positive voltage diode conduction has been diverted to the gate terminal which subtracts from the normal gate current. In
most cases, this allows any previously used SLIC supply rail shunt protection diode to be removed. Although the SLIC supply is taken to a
terminal that is internally connected to transistor bases, the terminal is still designated as the gate terminal, G.
Figure 6 shows the high impedance a.c. waveforms for the TISP61060. As the TISP61060 replaces the IC based protector’s gate diode with a
transistor, the peak gate current is reduced by over 50 times. In addition there is a compensating negative gate current flow during diode
conduction. The TISP61060 has the maximum value of peak gate current specified and so allows for a designer to design for limit conditions.
Most IC protectors do not specify this parameter. Figure 7 shows the improvement due to the TISP61060. These plots show the full cycle
average gate current against rms a.c. voltage. The IC based protector has a substantial positive gate current which will always charge the
SLIC supply, possibly causing an overvoltage. The TISP61060 has a negative gate current and so cannot overvoltage the SLIC.
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
TISP61060 Buffered Gate Protector (Continued)
TIP
WIRE
600 Ω
SLIC
TISP61060
R1
50 Ω
Th4
GENERATOR
SOURCE
RESISTANCE
R2
50 Ω
600 Ω
SWITCHING MODE
POWER SUPPLY
Tx
Th5
RING
WIRE
A.C.
GENERATOR
0 - 600 Vrms
IG
C2
ISLIC
C1
100 nF
IBAT
VBAT
D1
AI6XAE
Figure 5. TISP61060 Buffered Gate Protector
10
0
Voltage - V
-10
VK
-20
-30
VG
-40
-50
-60
0
5
10
Tim e - ms
15
20
10
8
IG
200
6
4
IK
100
2
0
0
IG
-2
-100
-4
-6
-200
-8
IK
-300
0
5
10
15
IG - Gate Current - mA
IK - Cathode Current - m A
300
-10
20
AI6XAI
Time - ms
Figure 6. TISP61060 High Impedance Power Cross Clipping Wave Forms
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
TISP61060 Buffered Gate Protector (Continued)
25
IG(AV) - Average Gate Current - mA
Figure 4. Condition
Figure 2. and Figure 5.
Test Circuits
20
Protector Starting to Crowbar
15
Figure 3. Condition
10
5
IC Based Protector
0
-5
Figure 6. Condition
TISP61060
-10
0
100
200
300
400
500
AI6XAJ
VAC - RMS Supply Voltage - V
Figure 7. Average Gate Current vs AC Supply Voltage in Figures 2 And 5
Circuit Component Values
The TISP61060 is a functional replacement for three devices, the LB1201, TCM1030 and TCM1060. These devices have a minimum value of
series limiting resistor (R1 and R2 in Figure 2) which will ensure that the impulse surge current will not exceed the device rated value. This is
summarized in the table below.
Devic e
ITSP A
LB1201
Minimum Series
Resistance Ω
ITSP A
TCM1030
Minimum Series
Resistance Ω
ITSP A
TCM1060
Minimum Series
Resistance Ω
ITSP A
TISP61060
Minimum Series
Resistance Ω
10/1000
10/160
2/10
Recommended Minimum
1 kV, 10 Ω
1.5 kV, 7.5 Ω
2.5 kV, 5 Ω
Series Resistance Ω
12.5
18.5
23
70
73.6
104
16
25
35
52.5
52.5
66.4
30
45
50
23.3
25.8
45
30
45
50
23.3
25.8
45
100
100
50
50
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
Circuit Component Values (Continued)
This table shows that the TISP61060 has impulse ratings which are higher or equal to those of the other three devices. Similarly, the
TISP61060 has a.c. ratings which are higher or equal to those of the other three devices. A series overcurrent protector should be included in
the wire feed to prevent exceeding the TISP61060 a.c. ratings. As covered earlier, the gate decoupling capacitor should be 100 nF and should
be mounted as close to the protector as possible.
Application Circuit
Figure 8 shows a typical TISP61060 SLIC card protection circuit. The incoming line wires, R and T, connect to the relay matrix via the series
overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for overcurrent protection.
Resistors will reduce the prospective current from the surge generator for both the TISP61060 and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or
battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-wire protection voltage
is twice the wire to ground value.
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
Th1
R1
SLIC
RELAY
S3a
S1a
SLIC
PROTECTOR
SLIC
Th4
S2a
Th3
RING
WIRE
R2
Th5
Th2
TISP
3xxxF3
OR
7xxxF3
S3b
S1b
S2b
TISP
61060
VBAT
100 nF
TEST
EQUIPMENT
RING
GENERATOR
AI6XAF
Figure 8. Typical Application Circuit
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61060 protector. The protector gate reference voltage comes from
the SLIC negative supply (VBAT). A 100 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
MECHANICAL DATA
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
4.80 - 5.00
(0.189 - 0.197)
5.80 - 6.20
(0.228 - 0.244)
8
7
6
5
1
2
3
4
INDEX
3.81 - 4.00
(0.150 - 0.157)
1.35 - 1.75
(0.053 - 0.069)
7 ° NOM
3 Places
0.25 - 0.50 x 45 ° N0M
(0.010 - 0.020)
0.102 - 0.203
(0.004 - 0.008)
0.28 - 0.79
(0.011 - 0.031)
DIMENSIONS ARE:
NOTES: A.
B.
C.
D.
Pin Spacing
1.27
(0.050)
(see Note A)
6 places
0.36 - 0.51
(0.014 - 0.020)
8 Places
0.190 - 0.229
(0.0075 - 0.0090)
4.60 - 5.21
(0.181 - 0.205)
7 ° NOM
4 Places
4°±4°
0.51 - 1.12
(0.020 - 0.044)
MILLIMETERS
(INCHES)
Leads are within 0.25 (0.010) radius of true position at maximum material condition.
Body dimensions do not include mold flash or protrusion.
Mold flash or protrusion shall not exceed 0.15 (0.006).
Lead tips to be planar within ±0.051 (0.002).
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MDXXAA E
TISP61060 Gated Protector Series
MECHANICAL DATA
D008 Tape DImensions
D008 Package (8-pin Small Outline) Single-Sprocket Tape
3.90 - 4.10
(.154 - .161)
1.50 - 1.60
(.059 - .063)
1.95 - 2.05
(.077 - .081)
7.90 - 8.10
(.311 - .319)
0.8 MIN.
(.03)
0.40
(.016)
5.40 - 5.60
(.213 - .220) 11.70 - 12.30
(.461 - .484)
ø 1.50 MIN.
(.059)
6.30 - 6.50
(.248 - .256)
Carrier Tape
Embossment
DIMENSIONS ARE:
0 MIN.
Direction of Feed
Cover
Tape
2.0 - 2.2
(.079 - .087)
MILLIMETERS
(INCHES)
NOTES: A. Taped devices are supplied on a reel of the following dimensions:Reel diameter:
MDXXATC
330 +0.0/-4.0
(12.99 +0.0/-.157)
Reel hub diameter:
100 ± 2.0
(3.937 ± .079)
Reel axial hole:
13.0 ± 0.2
(.512 ± .008)
B. 2500 devices are on a reel.
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP61060 Gated Protector Series
MECHANICAL DATA
P008 - Plastic Dual-In-Line Package
This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions The package is intended for insertion in mounting-hole rows on 7.62 (0.300) centers. Once the leads are compressed and
inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing
when used in soldered assembly.
P008
9.25 - 9.75
(.364 - .384)
8
7
6
5
Index
Notch
6.10 - 6.60
(.240 - .260)
1
2
3
4
1.78
MAX.
(.070)
4 Places
7.62 - 8.23
(.300 - .324)
5.08
MAX.
(.200)
Seating
Plane
0.51
MIN.
(.020)
0.38 - 0.53
(.015 - .021)
8 Places
DIMENSIONS ARE:
3.17
MIN.
(.125)
2.54
TYP.
(.100)
(see Note A)
6 Places
0.20 - 0.36
(.008 - .014)
8.38 - 9.40
(.330 - .370)
MILLIMETERS
(INCHES)
MDXXCF
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Dimensions fall within JEDEC MS001 - R-PDIP-T, 0.300" Dual-In-Line Plastic Family.
C. Details of the previous dot index P008 package style, drawing reference MDXXABA, are given in the earlier publications.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.