Transistors with built-in Resistor UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 1 0.95 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.9 –0.05 ● 1.5 –0.05 Features 1.9±0.2 ■ Unit: mm +0.2 2.8 –0.3 2 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z ■ Absolute Maximum Ratings +0.1 0.16 –0.06 (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.8 1.1 –0.1 Marking Symbol (R1) 6A 10kΩ 6B 22kΩ 6C 47kΩ 6D 10kΩ 6E 10kΩ 6F 4.7kΩ 6H 22kΩ 6I 0.51kΩ 6K 1kΩ 6L 47kΩ 6M 47kΩ 6N 47kΩ 6O 4.7kΩ 6P 2.2kΩ 6Q 4.7kΩ EI 2.2kΩ EW 4.7kΩ EY 22kΩ FC 2.2kΩ FE 4.7kΩ 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 ● +0.2 ■ Resistance by Part Number EIAJ:SC-59 Mini Type Package Internal Connection R1 C B R2 E (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Collector cutoff current Emitter cutoff current Conditions min typ Unit ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA UN2111 – 0.5 UN2112/2114/211E/211D/211M/211N/211T – 0.2 UN2113 – 0.1 UN2115/2116/2117/2110 – 0.01 IEBO UN211F/211H VEB = –6V, IC = 0 –1.0 UN2119 mA –1.5 UN2118/211L/211V –2.0 UN211Z – 0.4 Collector to base voltage VCBO IC = –10mA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Forward current transfer ratio UN2111 35 UN2112/211E 60 UN2113/2114/211M 80 UN2115*/2116*/2117*/2110* 160 UN2119/211F/211D/211H hFE VCE = –10V, IC = –5mA 30 20 UN211N/211T 80 400 UN211V 6 20 UN211Z 60 UN211V Output voltage high level VCE(sat) VOH Output voltage low level UN2113 UN211D VOL UN211E Transition frequency Input resistance 460 UN2118/211L Collector to emitter saturation voltage fT 200 IC = –10mA, IB = – 0.3mA – 0.25 IC = –10mA, IB = –1.5mA VCC = –5V, VB = – 0.5V, RL = 1kΩ – 0.07 – 0.25 –4.9 VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 – 0.2 VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 VCB = –10V, IE = 1mA, f = 200MHz 80 UN2111/2114/2115 10 UN2112/2117/211T 22 UN2113/2110/211D/211E 47 UN2116/211F/211L/211N/211Z R1 (–30%) UN2118 4.7 0.51 1 UN211H/211M/211V 2.2 * hFE rank classification (UN2115/2116/2117/2110) Rank Q R S hFE 160 to 260 210 to 340 290 to 460 V V V VCC = –5V, VB = –3.5V, RL = 1kΩ UN2119 2 max V MHz (+30%) kΩ UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z ■ Electrical Characteristics (continued) Parameter Symbol (Ta=25˚C) Conditions min max UN2111/2112/2113/211L 0.8 1.0 1.2 UN2114 0.17 0.21 0.25 UN2118/2119 0.08 0.1 0.12 UN211D Resistance ratio typ 4.7 UN211E UN211F/211T UN211H Unit 2.14 R1/R2 0.47 0.17 0.22 UN211M 0.047 UN211N 0.1 UN211V 1.0 UN211Z 0.21 0.27 3 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN2111 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –120 –0.8mA –0.7mA –100 –0.6mA –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –10 –10000 –30 –25˚C 80 40 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –3 25˚C 120 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 4 –1 Ta=75˚C VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2112 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –140 –120 –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –10 –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN –10000 Output current IO (µA) Collector output capacitance Cob (pF) –3 VCE= –10V Collector current IC (mA) Cob — VCB 5 Ta=75˚C 25˚C –0.1 Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) VCB (V) Characteristics charts of UN2113 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) Ta=25˚C –0.9mA –0.8mA –0.7mA –0.6mA –120 –0.5mA –100 –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE IB=–1.0mA –140 Collector to emitter saturation voltage VCE(sat) (V) –160 Ta=75˚C 300 25˚C 200 –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB IO — VIN 4 3 2 –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 VIN — IO –10000 Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2114 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –140 IB=–1.0mA –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –0.2mA –40 –0.1mA –20 Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –1 –3 –10 –10000 –30 25˚C –25˚C 100 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO VO=–5V Ta=25˚C –1000 –3000 –300 –1000 –100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –30 –10 –3 –1 1 –0.3 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 6 Ta=75˚C 200 IO — VIN f=1MHz IE=0 Ta=25˚C 5 300 Collector current IC (mA) Cob — VCB 6 VCE= –10V –25˚C –0.01 –0.1 –0.3 –12 hFE — IC 400 Forward current transfer ratio hFE –160 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.1 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2115 IC — VCE VCE(sat) — IC –100 IB=–1.0mA Collector current IC (mA) –140 –120 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –0.4mA –80 –0.3mA –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –160 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2116 IC — VCE VCE(sat) — IC IB=–1.0mA Collector current IC (mA) –140 Ta=25˚C –0.9mA –0.8mA –120 –0.7mA –0.6mA –100 –0.5mA –80 –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC 400 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE –160 –100 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 7 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB IO — VIN –10000 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 Collector to base voltage VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2117 IC — VCE VCE(sat) — IC –100 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Collector current IC (mA) –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 Ta=75˚C –1 –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 200 Ta=75˚C 25˚C 100 –25˚C 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 8 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –120 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2118 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –160 –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 Cob — VCB –30 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –100 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 160 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2119 IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –80 –0.6mA –0.5mA –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 160 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 9 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB f=1MHz IE=0 Ta=25˚C Output current IO (µA) 5 4 3 2 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN2110 IC — VCE VCE(sat) — IC –100 –60 –0.2mA –40 –0.1mA –20 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –12 Collector to emitter voltage VCE (V) –10 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –3 4 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C 5 –30 300 IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –3 –10000 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 10 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 400 Forward current transfer ratio hFE Ta=25˚C IB=–1.0mA –0.9mA –100 –0.8mA –0.7mA –0.6mA –0.5mA –80 –0.4mA –0.3mA Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –120 –30 –100 VCB (V) –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211D IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.2mA –0.7mA –0.6mA –0.5mA –0.4mA –20 –0.1mA –10 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 0 –12 Collector to emitter voltage VCE (V) –1 –30 25˚C –25˚C 80 40 0 –1 –100 Ta=75˚C 120 –3 3 2 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 4 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –10 –10000 f=1MHz IE=0 Ta=25˚C 5 –3 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA Collector to emitter saturation voltage VCE(sat) (V) –60 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –1.5 –100 VCB (V) –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN211E IC — VCE VCE(sat) — IC –100 Ta=25˚C Collector current IC (mA) –50 –40 –0.3mA –30 –0.6mA –0.5mA –0.4mA –20 –0.2mA –0.1mA –10 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 400 IC/IB=10 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE IB=–1.0mA –0.9mA –0.8mA –0.7mA Collector to emitter saturation voltage VCE(sat) (V) –60 –100 300 200 Ta=75˚C 100 0 –1 25˚C –25˚C –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 11 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB f=1MHz IE=0 Ta=25˚C 4 3 2 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Output current IO (µA) 5 VIN — IO –100 Input voltage VIN (V) Collector output capacitance Cob (pF) IO — VIN –10000 6 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –3 0 –0.1 –0.3 –1 –3 –10 –30 –1 –1.5 –100 –0.03 –2.0 –2.5 –3.0 –3.5 –4.0 –0.01 –0.1 –0.3 Input voltage VIN (V) Collector to base voltage VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN211F IC — VCE VCE(sat) — IC Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA Collector current IC (mA) –200 –160 –120 –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter saturation voltage VCE(sat) (V) –100 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 Collector to emitter voltage VCE (V) –10 –10000 –30 Ta=75˚C 25˚C 80 –25˚C 40 0 –1 –100 –3 3 2 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 4 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 1 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 12 –3 120 IO — VIN f=1MHz IE=0 Ta=25˚C 5 –1 VCE= –10V Collector current IC (mA) Cob — VCB 6 hFE — IC 160 Forward current transfer ratio hFE –240 –30 –100 VCB (V) –1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211H IC — VCE VCE(sat) — IC –120 –80 IB=–0.5mA –0.4mA –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 IC/IB=10 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 Collector to emitter voltage VCE (V) –3 –30 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –0.1 –0.3 –100 –300 –1000 –1 –3 –10 –30 –100 Collector current IC (mA) VIN — IO –100 f=1MHz IE=0 Ta=25˚C 4 3 2 VO=–0.2V Ta=25˚C –10 Input voltage VIN (V) 5 –10 VCE=–10V Collector current IC (mA) Cob — VCB 6 240 Forward current transfer ratio hFE Collector current IC (mA) –100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Collector output capacitance Cob (pF) hFE — IC –100 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UN211L IC — VCE VCE(sat) — IC –100 Collector current IC (mA) –200 –160 IB=–1.0mA –120 –0.8mA –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC –30 –10 –3 –1 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE= –10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –240 200 160 120 Ta=75˚C 80 25˚C –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 13 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Cob — VCB Collector output capacitance Cob (pF) 6 VIN — IO –100 f=1MHz IE=0 Ta=25˚C Input voltage VIN (V) 5 4 3 2 VO= –0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –3 –10 –30 Collector to base voltage –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) VCB (V) Characteristics charts of UN211M IC — VCE VCE(sat) — IC –10 Collector current IC (mA) 200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA 160 120 –0.5mA 80 –0.4mA –0.3mA 40 –0.2mA –0.1mA 0 –2 –4 –6 –8 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –0.03 –25˚C –0.01 –0.003 –0.001 –1 0 –12 –3 Cob — VCB –30 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 –1 –100 –300 –1000 –3 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) IO — VIN 10–4 10 VO=–0.2V Ta=25˚C –30 8 6 4 10–3 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –10 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 10–2 10–1 –10 –3 –1 –0.3 –0.1 2 –0.03 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage 14 500 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 hFE — IC –30 –100 VCB (V) 1 –0.4 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211N IC — VCE VCE(sat) — IC –10 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –0.3mA –50 –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –12 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 –100 Collector current IC (mA) Cob — VCB IO — VIN f=1MHz IE=0 Ta=25˚C –10000 Output current IO (µA) 5 4 3 2 VCE= –10V 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 Collector to emitter voltage VCE (V) 6 Collector output capacitance Cob (pF) –10 IC/IB=10 –10 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Collector current IC (mA) –175 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 –1 –0.4 –100 Collector to base voltage VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –1.4 Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UN211T IC — VCE VCE(sat) — IC –200 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –100 –0.5mA –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 hFE — IC IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 300 –10 VCE=–10V Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –10 –100 Collector current IC (mA) –1000 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –10 –100 –1000 Collector current IC (mA) 15 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z IO — VIN VIN — IO –100 VO=–5V Ta=25˚C –1000 –100 –10 –1 –0.4 –0.6 –0.8 –1 –1.2 –1 –0.1 –0.01 –0.1 –1.4 VO= –0.2V Ta=25˚C –10 Input voltage VIN (V) Output current IO (µA) –10000 Input voltage VIN (V) –1 –10 –100 Output current IO (mA) Characteristics charts of UN211V IC — VCE VCE(sat) — IC –10 IB=–1.0mA Collector current IC (mA) –10 –0.9mA –0.8mA –8 –0.7mA –0.6mA –6 –0.5mA –4 –0.4mA –0.3mA –2 –0.2mA –0.1mA 0 0 –2 –4 –6 –8 –10 –1 Ta=75˚C 25˚C –0.1 –25˚C –0.01 –1 –12 IO — VIN Input voltage VIN (V) Output current IO (µA) –100 –10 –0.8 –1 –1.2 Input voltage VIN (V) 16 –100 VO=–5V Ta=25˚C –0.6 –100 –1000 –1.4 VO= –0.2V Ta=25˚C –10 –1 –0.1 –0.01 –0.1 –1 VCE=–10V –10 Output current IO (mA) Ta=75˚C 10 25˚C 8 6 –25˚C 4 2 0 –1 –10 Collector current IC (mA) VIN — IO –1000 –1 –0.4 –10 Collector current IC (mA) Collector to emitter voltage VCE (V) –10000 IC/IB=10 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –12 hFE — IC 12 –100 –100 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN211Z IC — VCE VCE(sat) — IC –10 Collector current IC (mA) –175 –150 IB=–1.0mA –125 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –100 –75 –0.4mA –50 –0.3mA –0.2mA –25 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –1 Ta=75˚C –0.1 25˚C –25˚C –0.01 –1 –10 Cob — VCB –10000 4 3 2 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –1000 –10 –100 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –1000 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) –100 250 IO — VIN f=1MHz IE=0 Ta=25˚C 5 VCE= –10V Collector current IC (mA) Collector to emitter voltage VCE (V) 6 hFE — IC 300 Forward current transfer ratio hFE Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) –200 –100 –10 VO=–0.2V Ta=25˚C –10 –1 –0.1 1 0 –1 –10 Collector to base voltage –100 VCB (V) –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –1 –10 –100 Output current IO (mA) 17