Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits ● 3.0±0.2 ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 15.6±0.5 ■ Unit: mm 4.0±0.2 Features ● ● ● ● ● (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ ■ Absolute Maximum Ratings marking 1 2 3 2.0±0.2 UN4121 UN4122 UN4123 UN4124 UN412X UN412Y 0.7±0.1 ● +0.2 0.45–0.1 ■ Resistance by Part Number 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Internal Connection R1 C B R2 E 1 Transistors with built-in Resistor ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Collector cutoff current UN4121/4122/4123/4124/412X/412Y Conditions min max Unit ICBO VCB = –50V, IE = 0 –1 ICBO VCB = –50V, IE = 0 – 0.1 ICEO VCE = –50V, IB = 0 –1 ICEO VCE = –50V, IB = 0 – 0.5 IEBO VEB = –6V, IC = 0 –2 Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V UN412X Collector cutoff current UN412X UN4121 Emitter cutoff current UN4123/4124 UN4122/412Y 50 VCE = –10V, IC = –100mA Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –5mA – 0.25 UN412X VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 UN412Y VCE(sat) IC = –50mA, IB = –5mA – 0.15 UN4123/4124 UN412X 60 20 Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 500Ω Output voltage low level VOL VCC = –5V, VB = –3.5V, RL = 500Ω Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz –4.9 80 R1 (–30%) 10 UN412X 0.27 UN412Y 3.1 Resistance ratio UN4124 R1/R2 UN412X UN412Y PT — Ta 400 300 200 100 0 80 100 120 140 160 Ambient temperature Ta (˚C) (+30%) 0.8 1.0 1.2 0.17 0.22 0.27 0.043 0.054 0.065 0.67 Common characteristics chart Total power dissipation PT (mW) MHz 4.7 UN4123 60 V 2.2 UN4122 40 V V – 0.2 UN4121/4124 20 mA 40 hFE 0 µA –1 UN4121 Input resistance µA –5 UN4122/412X/412Y Forward current transfer ratio 2 typ kΩ Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Characteristics charts of UN4121 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –200 IB=–1.0mA –160 –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –120 –0.4mA –80 –0.3mA –0.2mA –40 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) –100 0 0 –2 –4 –6 –8 –10 IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 Collector to emitter voltage VCE (V) –25˚C –3 –10 Ta=75˚C 200 100 25˚C 0 –1 –100 –300 –1000 –3 6 4 –30 –100 –300 –1000 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) 8 –10 Collector current IC (mA) IO — VIN Output current IO (µA) Collector output capacitance Cob (pF) –30 –10000 f=1MHz IE=0 Ta=25˚C 10 300 Collector current IC (mA) Cob — VCB 12 VCE= –10V –25˚C –0.01 –1 –12 hFE — IC 400 Forward current transfer ratio hFE –240 –300 –100 –30 –10 VO= –0.2V Ta=25˚C –3 –1 –0.3 –0.1 2 –0.03 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 –1 –3 –10 –30 –100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UN4122 IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –150 –0.6mA –0.5mA –100 –0.4mA –0.3mA –0.2mA –50 –0.1mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –25˚C –0.03 –0.01 –1 160 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Ta=75˚C VCE= –10V Forward current transfer ratio hFE –300 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 3 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Cob — VCB IO — VIN –10000 20 16 12 8 VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C Output current IO (µA) Collector output capacitance Cob (pF) 24 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 VCB (V) –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN4123 IC — VCE VCE(sat) — IC Collector current IC (mA) –200 IB=–1.0mA –0.9mA –0.8mA –0.7mA –160 –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –40 –0.2mA –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C –100 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE IC/IB=10 –30 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 (V) –3 –30 –25˚C 100 50 0 –1 –100 –300 –1000 –3 16 12 8 –10 –30 –100 –300 –1000 Collector current IC (mA) VIN — IO –100 VO=–5V Ta=25˚C –3000 –30 –1000 –10 Input voltage VIN (V) Output current IO (µA) Collector output capacitance Cob (pF) 150 IO — VIN f=1MHz IE=0 Ta=25˚C –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 4 –10 –10000 20 25˚C Collector current IC (mA) Cob — VCB 24 Ta=75˚C VCE= –10V –25˚C –0.01 –1 –12 hFE — IC 200 Forward current transfer ratio hFE –240 –1 –0.4 –0.03 –0.6 –0.8 –1.0 –1.2 Input voltage VIN (V) –1.4 –0.01 –0.1 –0.3 –1 –3 –10 –30 Output current IO (mA) –100 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Characteristics charts of UN4124 IC — VCE VCE(sat) — IC Collector current IC (mA) –250 IB=–1.0mA –200 –0.9mA –0.8mA –0.7mA –0.6mA –150 –0.5mA –0.4mA –100 –0.3mA –0.2mA –50 –0.1mA Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 0 –2 –4 –6 –8 –10 –10 –3 –1 Ta=75˚C –0.3 25˚C –0.1 –0.03 –0.01 –1 –12 400 IC/IB=10 –30 Collector to emitter voltage VCE (V) –25˚C –3 –10 –30 VCE=–10V 350 300 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 –1 –100 –300 –1000 –3 IO — VIN –10000 16 12 8 –100 –300 –1000 VIN — IO VO=–5V Ta=25˚C –3000 –30 –1000 –10 Output current IO (µA) 20 –30 –100 Input voltage VIN (V) f=1MHz IE=0 Ta=25˚C –10 Collector current IC (mA) Collector current IC (mA) Cob — VCB 24 Collector output capacitance Cob (pF) hFE — IC –100 Forward current transfer ratio hFE –300 –300 –100 –30 –10 VO=–0.2V Ta=25˚C –3 –1 –0.3 –0.1 4 –3 0 –0.1 –0.3 –1 –3 –10 Collector to base voltage –30 –1 –0.4 –100 –0.03 –0.6 –0.8 –1.0 –1.2 –0.01 –0.1 –0.3 –1.4 Input voltage VIN (V) VCB (V) –1 –3 –10 –30 –100 Output current IO (mA) Characteristics charts of UN412X IC — VCE VCE(sat) — IC Ta=25˚C Collector current IC (mA) –200 IB=–1.6mA –160 –1.4mA –1.2mA –120 –1.0mA –0.8mA –80 –0.6mA –0.4mA –40 –0.2mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 Collector to emitter saturation voltage VCE(sat) (V) –100 hFE — IC –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 240 IC/IB=10 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE –240 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 5 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Cob — VCB VIN — IO –100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 VO= –0.2V Ta=25˚C –30 –10 Input voltage VIN (V) Collector output capacitance Cob (pF) 24 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 –30 –0.01 –0.1 –0.3 –100 –1 –3 –10 –30 –100 Output current IO (mA) Collector to base voltage VCB (V) Characteristics charts of UN412Y IC — VCE VCE(sat) — IC IB=–1.2mA –160 –1.0mA –0.8mA –120 –0.6mA –80 –0.4mA –40 –0.2mA 0 –2 –4 –6 –8 –10 –12 IC/IB=10 –30 –10 –3 –1 –0.3 Ta=75˚C 25˚C –0.1 –25˚C –0.03 –0.01 –1 0 –3 Cob — VCB –30 f=1MHz IE=0 Ta=25˚C 16 12 8 VO= –0.2V Ta=25˚C –10 –3 –1 –0.3 –0.1 4 –0.03 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) –0.01 –0.1 –0.3 –1 –3 VCE= –10V –10 –30 Output current IO (mA) 200 160 Ta=75˚C 25˚C 120 –25˚C 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 Input voltage VIN (V) 20 –100 –300 –1000 VIN — IO –100 24 Collector output capacitance Cob (pF) –10 Collector current IC (mA) Collector to emitter voltage VCE (V) 240 Forward current transfer ratio hFE Collector current IC (mA) –200 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 6 hFE — IC –100 –240 –100