BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D ● 125 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW84 E T E L O S B O BDW84B VCBO BDW84D -120 BDW84 -45 BDW84B VCEO BDW84D Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. -80 -100 BDW84C Emitter-base voltage -60 BDW84C BDW84A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -45 BDW84A Collector-base voltage (IE = 0) VALUE V -60 -80 V -100 -120 VEBO -5 V IC -15 A IB -0.5 A Ptot 125 W Ptot 3.5 W ½LIC2 100 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION AUGUST 1978 - REVISED JUNE 2011 Specifications are subject to change without notice. 1 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS IC = -30 mA IB = 0 MIN (see Note 5) BDW84 -45 BDW84A -60 BDW84B -80 BDW84C -100 BDW84D -120 TYP MAX V VCE = -30 V IB = 0 BDW84 -1 VCE = -30 V IB = 0 BDW84A -1 VCE = -40 V IB = 0 BDW84B -1 VCE = -50 V IB = 0 BDW84C -1 VCE = -60 V IB = 0 BDW84D VCB = -45 V IE = 0 BDW84 -0.5 VCB = -60 V IE = 0 BDW84A -0.5 IE = 0 BDW84B -0.5 VCB = -100 V IE = 0 BDW84C -0.5 Collector cut-off VCB = -120 V IE = 0 BDW84D -0.5 current VCB = -45 V IE = 0 TC = 150°C BDW84 -5 current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage E T E L O S B O VCB = -60 V IE = 0 TC = 150°C BDW84A -5 VCB = -80 V IE = 0 TC = 150°C BDW84B -5 VCB = -100 V IE = 0 TC = 150°C BDW84C -5 VCB = -120 V IE = 0 TC = 150°C BDW84D -5 VEB = -5 V IC = 0 VCE = -3 V IC = -6 A VCE = -3 V IC = -15 A VCE = -3 V IC = -6 A IB = -12 mA IC = -6 A IB = -150 mA IC = -15 A IE = IB = 0 -15 A -2 750 (see Notes 5 and 6) mA -1 VCB = -80 V Emitter cut-off UNIT mA mA 20000 100 (see Notes 5 and 6) -2.5 -2.5 (see Notes 5 and 6) -4 -3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN TYP MAX UNIT 1 °C/W 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature TEST CONDITIONS † PARAMETER † MIN ton Turn-on time IC = -10 A IB(on) = -40 mA IB(off) = 40 mA toff Turn-off time VBE(off) = 4.2 V RL = 3 Ω tp = 20 µs, dc ≤ 2% 0.9 µs 7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TYP INFORMATION AUGUST 1978 - REVISED JUNE 2011 Specifications are subject to change without notice. BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS145AG 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 1000 -1·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 -0·5 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS145AH -2·0 -10 -20 0 -0·5 -1·0 IC - Collector Current - A TC = -40°C TC = 25°C TC = 100°C -10 -20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS145AI VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 TC = -40°C TC = 25°C -2·5 TC = 100°C -2·0 -1·0 -1·5 -0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 -0·5 -1·0 -10 -20 IC - Collector Current - A Figure 3. PRODUCT INFORMATION AUGUST 1978 - REVISED JUNE 2011 Specifications are subject to change without notice. 3 BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 -10 -1 BDW84 BDW84A BDW84B BDW84C BDW84D E T E L O S B O -0.1 -1 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION Figure 5. PRODUCT 4 INFORMATION AUGUST 1978 - REVISED JUNE 2011 Specifications are subject to change without notice. BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 1,37 1,17 3,95 4,15 E T E L O S B O 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 11,1 10,8 0,78 0,50 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAW NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 5 INFORMATION AUGUST 1978 - REVISED JUNE 2011 Specifications are subject to change without notice.