Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Tc=25℃) SYMBOL 固 VCBO PARAMETER VEBO M E S E BDW84B ANG Collector-emitter voltage Emitter-base voltage Open emitter -60 -80 BDW84C -100 BDW84D -120 BDW84 -45 BDW84A -60 BDW84B UNIT -45 BDW84A Collector-base voltage TOR VALUE C U D ICON BDW84 INCH VCEO CONDITIONS Open base -80 BDW84C -100 BDW84D -120 Open collector V V -5 V IC Collector current -15 A IB Base current -0.5 A PC Collector power dissipation TC=25℃ 150 Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS MIN BDW84 -45 BDW84A -60 BDW84B IC=-30mA, IB=0 TYP. MAX UNIT V -80 BDW84C -100 BDW84D -120 VCEsat-1 Collector-emitter saturation voltage IC=-6A ,IB=-12mA -2.5 V VCEsat-2 Collector-emitter saturation voltage IC=-15A ,IB=-150mA -4.0 V Base-emitter on voltage IC=-6A ; VCE=-3V -2.5 V VCB=-45V, IE=0 TC=150℃ VCB=-60V, IE=0 TC=150℃ VCB=-80V, IE=0 TC=150℃ VCB=-100V, IE=0 TC=150℃ VCB=-120V, IE=0 TC=150℃ -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 mA -1 mA -2 mA VBE BDW84 BDW84A ICBO 体 半导 Collector cut-off current 固电 ICEO BDW84B BDW84C BDW84D IN Collector cut-off current D N O IC M E S GE BDW84 VCE=-30V, IB=0 BDW84A VCE=-30V, IB=0 BDW84B VCE=-40V, IB=0 BDW84C VCE=-50V, IB=0 BDW84D VCE=-60V, IB=0 N A H C R O T UC IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-6A ; VCE=-3V 750 hFE-2 DC current gain IC=-15A ; VCE=-3V 100 VEC Diode forward voltage IE=-15A ton Turn-on time toff Turn-off time IC =-10 A, IB1 =-IB2=-40 mA RL=3Ω; VBE(off) =4.2V Duty Cycle≤2% 20000 -3.5 V 0.9 μs 7.0 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 0.83 ℃/W Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3