PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83, BDW83A, BDW83B, BDW83C, BDW83D Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage IB = 0 VCBO Collector- Emitter Voltage IE = 0 VEBO IC IB Emitter-Base Voltage Collector Current Base Current Pt Total Power Dissipation TJ TStg Junction Temperature Storage Temperature Value BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D IC = 0 25°C case temperatur 25°C free aire temperatur Unit -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 -65 to +150 -65 to +150 °C °C Value Unit 0.83 35.7 °C/W V V V A A W THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO ICBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current hFE DC Current Gain (*) VBE(on) VEC IC=30 mA IB=0 Collector-Emitter Sustaining Voltage (*) IEBO VCE(SAT) Test Condition(s) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) Parallel Diode Forward Voltage ton Turn-on time toff Turn-off time BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D IB=0, VCE=-30 V IB=0, VCE=-30 V IB=0, VCE=-40 V IB=0, VCE=-50 V IB=0, VCE=-60 V IE= 0, VCB=-45 V IE= 0, VCB=-60 V IE= 0, VCB=-80 V IE= 0, VCB=-100 V IE= 0, VCB=-120 V VCB=-45 V, IE= 0 BDW84 Tcase = 150°C VCB=-60 V, IE= 0 BDW84A Tcase = 150°C VCB=-80 V, IE= 0 BDW84B Tcase = 150°C VCB=-100 V, IE= 0 BDW84C Tcase = 150°C VCB=-120 V, IE= 0 BDW84D Tcase = 150°C VEB=-5.0 V, IC=0 IC=-6 A , VCE=-3.0 V IC=-15 A , VCE=-3.0 V IC=-6 A , IB=-12 mA IC=-15 A , IB=-150 mA IC=-6 A , IB=-3 A Min Typ Max Unit -45 -60 -80 -100 -120 - - V - - -1 mA - - -0.5 mA - - -5 750 100 - - -2 20 K -2.5 -4 -2.5 mA IE =-15 A , IE= 0 - - -3.5 V IC = -10 A, IB1 =-IB2=-40 mA RL=3Ω; VBE(off) = 4.2V Duty Cycle≤2% - 0.9 - - 7 - COMSET SEMICONDUCTORS V V µs (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 23/10/2012 - 2|3 PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : 15.20 1.90 4.60 3.10 0.35 5.35 20.00 19.60 0.95 4.80 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 Base Collector Emitter The centre pin is in electrical contact with the mounting tab. Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3