POINN BDW83C

BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
●
AUGUST 1978 - REVISED MARCH 1997
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
●
150 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Minimum hFE of 750 at 3 V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW83
BDW83B
60
VCBO
80
BDW83C
100
BDW83D
120
BDW83
45
BDW83A
Collector-emitter voltage (IB = 0) (see Note 1)
BDW83B
UNIT
45
BDW83A
Collector-base voltage (IE = 0)
VALUE
V
60
VCEO
BDW83C
80
V
100
BDW83D
120
V EBO
5
V
Continuous collector current
IC
15
A
Continuous base current
IB
0.5
A
Ptot
150
W
Emitter-base voltage
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
Ptot
3.5
W
½LIC 2
100
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V (BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
VCE(sat)
VEC
TEST CONDITIONS
Collector-emitter
breakdown voltage
IC = 30 mA
IB = 0
MIN
(see Note 5)
BDW83
45
BDW83A
60
BDW83B
80
BDW83C
100
BDW83D
120
TYP
MAX
V
VCE = 30 V
IB = 0
BDW83
1
V CE = 30 V
IB = 0
BDW83A
1
V CE = 40 V
IB = 0
BDW83B
1
V CE = 50 V
IB = 0
BDW83C
1
V CE = 60 V
IB = 0
BDW83D
VCB = 45 V
IE = 0
BDW83
0.5
V CB = 60 V
IE = 0
BDW83A
0.5
V CB = 80 V
IE = 0
BDW83B
0.5
V CB = 100 V
IE = 0
BDW83C
0.5
Collector cut-off
V CB = 120 V
IE = 0
BDW83D
0.5
current
V CB = 45 V
IE = 0
TC = 150°C
BDW83
5
V CB = 60 V
IE = 0
TC = 150°C
BDW83A
5
V CB = 80 V
IE = 0
TC = 150°C
BDW83B
5
V CB = 100 V
IE = 0
TC = 150°C
BDW83C
5
V CB = 120 V
IE = 0
TC = 150°C
BDW83D
5
VEB =
IC = 0
Collector-emitter
cut-off current
Emitter cut-off
current
5V
Forward current
VCE =
3V
IC = 6 A
transfer ratio
V CE =
3V
IC = 15 A
VCE =
3V
IC = 6 A
Base-emitter
voltage
Collector-emitter
IB =
12 mA
IC = 6 A
saturation voltage
IB = 150 mA
IC = 15 A
IE =
IB = 0
Parallel diode
forward voltage
15 A
mA
1
2
(see Notes 5 and 6)
UNIT
750
mA
mA
20000
100
(see Notes 5 and 6)
2.5
2.5
(see Notes 5 and 6)
4
V
V
3.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
0.83
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
†
MIN
ton
Turn-on time
IC = 10 A
IB(on) = 40 mA
IB(off) = -40 mA
toff
Turn-off time
V BE(off) = -4.2 V
RL = 3 Ω
tp = 20 µs, dc ≤ 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
TYP
0.9
µs
7
µs
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS140AG
70000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = 3 V
t p = 300 µs, duty cycle < 2%
100
0·5
1·0
10
TCS140AH
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
0·5
20
TC = -40°C
TC = 25°C
TC = 100°C
0
0·5
1·0
IC - Collector Current - A
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AI
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
0·5
0
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
1·0
10
20
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS140AB
10
1·0
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AB
Ptot - Maximum Power Dissipation - W
160
140
120
100
80
60
40
20
0
0
25
50
75
100
TC - Case Temperature - °C
Figure 5.
PRODUCT
4
INFORMATION
125
150
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
5
INFORMATION
MDXXAW
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
6
INFORMATION