BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDX34A E T E L O S B O BDX34B V CBO BDX34D -120 BDX34 -45 BDX34B V CEO BDX34D Continuous collector current Continuous base current -80 -100 BDX34C Emitter-base voltage -60 BDX34C BDX34A Collector-emitter voltage (IB = 0) UNIT -45 BDX34 Collector-base voltage (IE = 0) VALUE V -60 -80 V -100 -120 VEBO -5 V IC -10 A IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free air temperature range TJ -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) Collector-emitter breakdown voltage TEST CONDITIONS IC = -100 mA VEC (see Note 3) -45 BDX34A -60 BDX34B -80 BDX34C -100 BDX34D -120 TYP MAX IB = 0 BDX34 -0.5 VCE = -30 V IB = 0 BDX34A -0.5 VCE = -40 V IB = 0 BDX34B -0.5 VCE = -50 V IB = 0 BDX34C -0.5 Collector-emitter VCE = -60 V IB = 0 BDX34D -0.5 cut-off current VCE = -30 V IB = 0 TC = 100°C BDX34 -10 VCE = -30 V IB = 0 TC = 100°C BDX34A -10 VCE = -40 V IB = 0 TC = 100°C BDX34B -10 VCE = -50 V IB = 0 TC = 100°C BDX34C -10 VCE = -60 V IB = 0 TC = 100°C BDX34D -10 VCB = -45 V IE = 0 BDX34 -1 VCB = -60 V IE = 0 BDX34A -1 Collector cut-off current Emitter cut-off current Forward current transfer ratio Base-emitter voltage E T E L O S B O VCB = -80 V IE = 0 BDX34B -1 VCB = -100 V IE = 0 BDX34C -1 VCB = -120 V IE = 0 BDX34D -1 VCB = -45 V IE = 0 TC = 100°C BDX34 -5 VCB = -60 V IE = 0 TC = 100°C BDX34A -5 VCB = -80 V IE = 0 TC = 100°C BDX34B -5 VCB = -100 V IE = 0 TC = 100°C BDX34C -5 VCB = -120 V IE = 0 TC = 100°C BDX34D -5 VEB = -5 V IC = 0 VCE = -3 V IC = -4 A BDX34 750 VCE = -3 V IC = -4 A BDX34A 750 VCE = -3 V IC = -3 A BDX34B 750 VCE = -3 V IC = -3 A BDX34C 750 VCE = -3 V IC = -3 A BDX34D 750 VCE = -3 V IC = -4 A BDX34 -2.5 VCE = -3 V IC = -4 A BDX34A -2.5 VCE = -3 V IC = -3 A BDX34B -2.5 VCE = -3 V IC = -3 A BDX34C -2.5 Collector-emitter saturation voltage Parallel diode forward voltage (see Notes 3 and 4) (see Notes 3 and 4) -10 -3 V IC = -3 A BDX34D -2.5 IB = -8 mA IC = -4 A BDX34 -2.5 IB = -8 mA IC = -4 A BDX34A -2.5 IB = -6 mA IC = -3 A BDX34B -2.5 IB = -6 mA IC = -3 A BDX34C -2.5 IB = -6 mA IC = -3 A BDX34D -2.5 IE = -8 A (see Notes 3 and 4) IB = 0 UNIT V VCE = -30 V VCE = VCE(sat) IB = 0 MIN BDX34 -4 mA mA mA V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN TYP ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs toff Turn-off time VBE(off) = 3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. E T E L O S B O AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AF 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 -1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 -1·5 -1·0 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS135AH -2·0 -10 -0·5 -0·5 IC - Collector Current - A -1·0 TC = -40°C TC = 25°C TC = 100°C -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AJ VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 E T E L O S B O 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5