BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDX33 BDX33B 60 VCBO 80 BDX33C 100 BDX33D 120 BDX33 45 BDX33A Collector-emitter voltage (IB = 0) BDX33B UNIT 45 BDX33A Collector-base voltage (IE = 0) VALUE V 60 VCEO BDX33C 80 V 100 BDX33D 120 V EBO 5 V Continuous collector current IC 10 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free air temperature range TJ -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Emitter-base voltage Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VBE(on) TEST CONDITIONS Collector-emitter breakdown voltage IC = 100 mA VEC (see Note 3) 45 BDX33A 60 BDX33B 80 BDX33C 100 BDX33D 120 TYP BDX33 0.5 V CE = 30 V IB = 0 BDX33A 0.5 V CE = 40 V IB = 0 BDX33B 0.5 V CE = 50 V IB = 0 BDX33C 0.5 Collector-emitter V CE = 60 V IB = 0 BDX33D 0.5 cut-off current V CE = 30 V IB = 0 TC = 100°C BDX33 10 V CE = 30 V IB = 0 TC = 100°C BDX33A 10 V CE = 40 V IB = 0 TC = 100°C BDX33B 10 V CE = 50 V IB = 0 TC = 100°C BDX33C 10 V CE = 60 V IB = 0 TC = 100°C BDX33D 10 VCB = 45 V IE = 0 BDX33 1 V CB = 60 V IE = 0 BDX33A 1 V CB = 80 V IE = 0 BDX33B 1 V CB = 100 V IE = 0 BDX33C 1 Collector cut-off V CB = 120 V IE = 0 BDX33D 1 current V CB = 45 V IE = 0 TC = 100°C BDX33 5 V CB = 60 V IE = 0 TC = 100°C BDX33A 5 V CB = 80 V IE = 0 TC = 100°C BDX33B 5 V CB = 100 V IE = 0 TC = 100°C BDX33C 5 V CB = 120 V IE = 0 TC = 100°C BDX33D 5 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage 10 VCE = 3V IC = 4 A BDX33 750 V CE = 3V IC = 4 A BDX33A 750 V CE = 3V IC = 3 A BDX33B 750 V CE = 3V IC = 3 A BDX33C 750 V CE = 3V IC = 3 A BDX33D 750 VCE = 3V IC = 4 A BDX33 2.5 V CE = 3V IC = 4 A BDX33A 2.5 V CE = 3V IC = 3 A BDX33B 2.5 V CE = 3V IC = 3 A BDX33C 2.5 (see Notes 3 and 4) (see Notes 3 and 4) 3V IC = 3 A BDX33D 2.5 IB = 8 mA IC = 4 A BDX33 2.5 IB = 8 mA IC = 4 A BDX33A 2.5 IB = 6 mA IC = 3 A BDX33B 2.5 IB = 6 mA IC = 3 A BDX33C 2.5 IB = 6 mA IC = 3 A BDX33D 2.5 IE = 8A (see Notes 3 and 4) IB = 0 PRODUCT INFORMATION UNIT V IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 2 MAX VCE = 30 V V CE = VCE(sat) IB = 0 MIN BDX33 4 mA mA mA V V V BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN TYP ton Turn-on time IC = 3 A IB(on) = 12 mA IB(off) = -12 mA 1 µs toff Turn-off time VBE(off) = -3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 3 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AF 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V t p = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AH 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AJ VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. PRODUCT 4 INFORMATION BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. PRODUCT INFORMATION 5 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7