Inchange Semiconductor Product Specification BDX34/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON ・Complement to type BDX33/A/B/C APPLICATIONS ・For power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BDX34 VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC BDX34A VALUE -45 Open emitter -60 BDX34B -80 BDX34C -100 BDX34 -45 BDX34A UNIT Open base -60 BDX34B -80 BDX34C -100 Open collector V V -5 V Collector current-DC -10 A ICM Collector current-Pulse -15 A IB Base current -0.25 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.78 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BDX34/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX34 VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE VF Collector-emitter sustaining voltage Collector-emitter saturation voltage MIN MAX BDX34A -60 IC=-0.1A, IB=0 V BDX34B -80 BDX34C -100 BDX34/34A IC=-4A ,IB=-8mA BDX34B/34C IC=-3A ,IB=-6mA BDX34/34A IC=-4A ; VCE=-3V BDX34B/34C IC=-3A ; VCE=-3V BDX34 VCB=-45V, IE=0 BDX34A VCB=-60V, IE=0 BDX34B VCB=-80V, IE=0 BDX34C VCB=-100V, IE=0 BDX34 VCE=-22V, IB=0 BDX34A VCE=-30V, IB=0 BDX34B VCE=-40V, IB=0 BDX34C VCE=-50V, IB=0 Collector cut-off current Collector cut-off current Emitter cut-off current UNIT -45 Base-emitter on voltage VEB=-5V; IC=0 BDX34/34A IC=-4A ; VCE=-3V BDX34B/34C IC=-3A ; VCE=-3V DC current gain Forward diode voltage TYP. -2.5 V -2.5 V -0.2 mA -0.5 mA -5.0 mA -4.0 V 750 IF=-8A 2 Inchange Semiconductor Product Specification BDX34/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3