ISC BDX34

Inchange Semiconductor
Product Specification
BDX34/A/B/C
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・High DC current gain
・DARLINGTON
・Complement to type BDX33/A/B/C
APPLICATIONS
・For power linear and switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BDX34
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
BDX34A
VALUE
-45
Open emitter
-60
BDX34B
-80
BDX34C
-100
BDX34
-45
BDX34A
UNIT
Open base
-60
BDX34B
-80
BDX34C
-100
Open collector
V
V
-5
V
Collector current-DC
-10
A
ICM
Collector current-Pulse
-15
A
IB
Base current
-0.25
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.78
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
BDX34/A/B/C
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX34
VCEO(SUS)
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VF
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
MIN
MAX
BDX34A
-60
IC=-0.1A, IB=0
V
BDX34B
-80
BDX34C
-100
BDX34/34A
IC=-4A ,IB=-8mA
BDX34B/34C
IC=-3A ,IB=-6mA
BDX34/34A
IC=-4A ; VCE=-3V
BDX34B/34C
IC=-3A ; VCE=-3V
BDX34
VCB=-45V, IE=0
BDX34A
VCB=-60V, IE=0
BDX34B
VCB=-80V, IE=0
BDX34C
VCB=-100V, IE=0
BDX34
VCE=-22V, IB=0
BDX34A
VCE=-30V, IB=0
BDX34B
VCE=-40V, IB=0
BDX34C
VCE=-50V, IB=0
Collector cut-off current
Collector cut-off current
Emitter cut-off current
UNIT
-45
Base-emitter on voltage
VEB=-5V; IC=0
BDX34/34A
IC=-4A ; VCE=-3V
BDX34B/34C
IC=-3A ; VCE=-3V
DC current gain
Forward diode voltage
TYP.
-2.5
V
-2.5
V
-0.2
mA
-0.5
mA
-5.0
mA
-4.0
V
750
IF=-8A
2
Inchange Semiconductor
Product Specification
BDX34/A/B/C
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3