BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BDX34 : BDX34A : BDX34B : BDX34C - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C - 45 - 60 - 80 - 100 V V V V Collector-Base Voltage IC Collector Current (DC) - 10 A ICP *Collector Current (Pulse) - 15 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG - 0.25 A 70 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C ©2000 Fairchild Semiconductor International Rev. A, February 2000 Symbol VCEO(sus) VCER(sus) VCEV(sus) ICBO ICEO Parameter * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Emitter Cut-off Current * DC Current Gain Max. Units IC = -100mA, IB = 0 - 45 - 60 - 80 - 100 V V V V IC = -1 00mA, IB = 0 RBE = 100Ω - 45 - 60 - 80 - 100 V V V V IC = - 100mA, IB = 0 VBE = - 1.5V - 45 - 60 - 80 - 100 V V V V : BDX34 : BDX34A : BDX34B : BDX34C VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 0.2 - 0.2 - 0.2 - 0.2 mA mA mA mA : BDX34 : BDX34A : BDX34B : BDX34C VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB =0 VCE = - 50V, IB = 0 - 0.5 - 0.5 - 0.5 - 0.5 mA mA mA mA VEB = - 5V, IC = 0 -5 mA : BDX34/34A : BDX34B/34C VF Typ. Collector Cut-off Current hFE VBE(on) Min. Collector Cut-off Current IEBO VCE(sat) Test Condition VCE = - 3V, IC = - 4A VCE = - 3V, IC = - 3A 750 750 * Collector-Emitter Saturation Voltage : BDX34/34A : BDX34B/34C IC = - 4A, IB = - 8mA IC = - 3A, IB = - 6mA - 2.5 - 2.5 V V * Base-Emitter ON Voltage : BDX34/34A : BDX34B/34C VCE = - 3V, IC = - 4A VCE = - 3V, IC = - 3A - 2.5 - 2.5 V V * Parallel Diode Forward Voltage IF = - 8A -4 V * Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BDX34/A/B/C Electrical Characteristics TC=25°C unless otherwise noted BDX34/A/B/C Typical Characteristics -10 100k VCE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -3V 10k 1k 100 -0.1 -1 IC= 250IB -1 -0.1 -0.1 -10 -1 IC [A], COLLECTOR CURRENT -10 IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage -10.0 1000 f = 1MHz IE = 0 -7.5 Cob [pF], CAPACTIANCE IC[A], COLLECTOR CURRENT VCE= -3V -5.0 -2.5 -0.0 -0 -1 -2 -3 100 10 -4 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance 80 -100 PD [W], POWER DISSIPATION IC [A], COLLECTOR CURRENT 70 IC MAX. (Pulsed) 5 ms 1 ms 100 us 10 us -10 IC MAX. (Continuous) DC -1 BDX34 BDX34A BDX34B BDX34C 60 50 40 30 20 10 0 -0.1 -1 -10 -100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International -1000 0 25 50 75 100 125 150 175 200 o Tc [ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 BDX34/A/B/C Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E