TIC116 Series

TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
8 A Continuous On-State Current
80 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
K
1
Max IGT of 20 mA
A
2
G
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage
TIC116D
TIC116M
SYMBOL
VDRM
E
T
E
L
O
S
B
O
TIC116S
TIC116N
TIC116D
Repetitive peak reverse voltage
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
TIC116M
TIC116S
TIC116N
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VRRM
IT(RMS)
VALUE
400
600
700
MDC1ACA
UNIT
V
800
400
600
700
800
V
8
A
IT(AV)
5
A
ITM
80
A
PGM
5
W
TC
-40 to +110
°C
TL
230
°C
IGM
PG(AV)
Tstg
3
1
-40 to +125
A
W
°C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
TEST CONDITIONS
VD = rated VDRM
MIN
MAX
UNIT
TC = 110°C
2
mA
2
mA
20
mA
VR = rated VRRM
IG = 0
TC = 110°C
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = - 40°C
TYP
8
2.5
tp(g) ≥ 20 µs
VGT
Gate trigger voltage
VAA = 12 V
RL = 100 Ω
0.8
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = 110°C
tp(g) ≥ 20 µs
VAA = 12 V
IH
Holding current
VT
dv/dt
NOTE
voltage
TC = - 40°C
100
Initiating IT = 100 mA
mA
VAA = 12 V
Critical rate of rise of
off-state voltage
IT = 8 A
40
(see Note 5)
1.7
E
T
E
L
O
S
B
O
VD = rated VD
IG = 0
TC = 110°C
400
V
V/µs
5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
V
0.2
Initiating IT = 100 mA
On-state
1.5
TYP
MAX
UNIT
3
°C/W
62.5
°C/W
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
AVERAGE ON-STATE CURRENT
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT
DERATING CURVE
12
0°
180°
Φ
Conduction
10
Continuous DC
Angle
8
6
Φ = 180°
4
2
40
50
60
TI03AB
100
TJ = 110°C
10
1
E
T
E
L
O
S
B
O
70
80
90
100
110
0·1
0·1
1
10
100
TC - Case Temperature - °C
IT - Continuous On-State Current - A
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI03AC
100
10
RθJC(t) - Transient Thermal Resistance - °C/W
IT(AV) - Maximum Average On-State Current - A
14
0
30
ITM - Peak Half-Sine-Wave Current - A
PA - Max Continuous Anode Power Dissipated- W
TI03AA
16
10
TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1
TI03AD
1
0·1
1
10
100
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
Figure 4.
100
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC03AA
TC03AB
1
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
VAA =12 V
RL = 100 Ω
tp(g) ≥ 20 µs
10
0·8
0·6
0·4
VAA =12 V
RL = 100 Ω
E
T
E
L
O
S
B
O
0·2
1
-50
-25
0
25
50
75
100
tp(g) ≥ 20 µs
0
-50
125
-25
Figure 5.
50
75
100
125
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
HOLDING CURRENT
vs
CASE TEMPERATURE
TC03AD
10
TC03AE
2·5
VTM - Peak On-State Voltage - V
VAA = 12 V
Initiating IT = 100 mA
IH - Holding Current - mA
25
TC - Case Temperature - °C
TC - Case Temperature - °C
100
0
TC = 25 °C
tP = 300 µs
Duty Cycle ≤ 2 %
2
1·5
1
0·5
1
-50
-25
0
25
50
75
TC - Case Temperature - °C
Figure 7.
100
125
0
0·1
1
100
Figure 8.
4
10
ITM - Peak On-State Current - A
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.