SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings A B C D E Unit M S N Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 12 70°C case temperature (see note2) Average on-state current (180° conduction 7.5 angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) 100 Peak positive gate current (pulse width 3 ≤300 µs) Peak power dissipation (pulse width ≤300 5 µs) Average gate power dissipation (see 1 Note5) Operating case temperature range -40 to +110 Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 230 seconds VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms. Page 1 of 3 V V A A A A W W °C °C °C SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq Ratings Gate-controlled Turn-on time Circuit-communicated Turn-off time Value VAA = 30 V, RL = 6 Ω, RGK(eff) = 100 Ω, Vin = 20 V 0.8 VAA = 30 V, RL = 6 Ω, IRM ≈ 10 A 11 Unit µs ≤ 2.4 ≤ 62.5 R∂JC R∂JA °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IDRM Repetitive peak off-state current IRRM Repetitive peak reverse current IGT Gate trigger current VGT IH Gate trigger voltage Holding current VD = Rated VDRM, RGK = 1 kΩ, TC = 110°C VR = Rated VRRM, IG = 0, TC = 110°C VAA = 6 V, RL = 100 Ω, tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω, RGK = 1 kΩ, tp(g) ≥ 20µs, TC = -40°C VAA = 6 V, RL = 100 Ω, RGK = 1 kΩ, tp(g) ≥ 20µs, VAA = 6 V, RL = 100 Ω, RGK = 1 kΩ, tp(g) ≥ 20µs, TC = 110°C VAA = 6 V, RGK = 1 kΩ, initiating IT = 100 mA VTM Peak on-state voltage VAA = 6 V, RGK = 1 kΩ, initiating IT = 100 mA, TC = -40°C ITM = 8A (see Note6) dv/dt Critical rate of rise of off-state voltage VD = Rated VD, TC = 110°C Min Typ Mx Unit - - 2 mA - - 2 mA - 5 20 mA - - 2.5 - 0.8 1.5 0.2 - - - - 40 mA - - 70 - - 1.4 V - 100 - V/µs Note 6: This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body. Page 2 of 3 V SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : Page 3 of 3 kathode Anode Gate