COMSET TIC126M

SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
•
•
•
•
•
•
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 20 mA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Ratings
A
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 70°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
70°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width ≤300 µs)
Peak power dissipation
(pulse width ≤300 µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
30/10/2012
B
C
D
E
Unit
M
S
N
100 200 300 400 500 600 700 800
V
100 200 300 400 500 600 700 800
V
12
A
7.5
A
100
A
3
A
5
W
1
W
-40 to +110
-40 to +125
°C
°C
230
°C
COMSET SEMICONDUCTORS
1|4
SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
THERMAL CHARACTERISTICS
Symbol
tgt
tq
R∂JC
R∂JA
Ratings
Value
Gate-controlled
VAA = 30 V, RL = 6 Ω
Turn-on time
RGK(eff) = 100 Ω, Vin = 20 V
Circuit-communicated
VAA = 30 V, RL = 6 Ω
Turn-off time
IRM ≈ 10 A
Junction to case thermal resistance
Junction to free air thermal resistance
Unit
0.8
µs
11
≤ 2.4
≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IDRM
Repetitive peak off-state
current
IRRM
Repetitive peak reverse
current
IGT
Gate trigger current
VGT
Gate trigger voltage
Holding current
IH
VTM
dv/dt
Peak on-state voltage
Critical rate of rise of offstate voltage
30/10/2012
VD = Rated VDRM
RGK = 1 kΩ
TC = 110°C
VR = Rated VRRM, IG = 0
TC = 110°C
VAA = 6 V, RL = 100 Ω
tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
TC = -40°C
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
VAA = 6 V, RL = 100 Ω
RGK = 1 kΩ, tp(g) ≥ 20µs
TC = 110°C
VAA = 6 V, RGK = 1 kΩ
initiating IT = 100 mA
VAA = 6 V, RGK = 1 kΩ
initiating IT = 100 mA
TC = -40°C
ITM = 8A (see Note6)
VD = Rated VD
TC = 110°C
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
2
mA
-
-
2
mA
-
5
20
mA
-
-
2.5
-
0.8
1.5
0.2
-
-
-
-
40
-
-
70
-
-
1.4
V
-
100
-
V/µs
V
mA
2|4
SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave
operation with resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts, are located within
3.2mm (1/8 inch) from de device body.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4
SEMICONDUCTORS
TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M,
TIC126N, TIC126S
PINNING
Pin 1 :
Pin 2 :
Pin 3 :
kathode
Anode
Gate
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
30/10/2012
[email protected]
COMSET SEMICONDUCTORS
4|4