TIC108 Series

TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
20 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
K
1
Max IGT of 1 mA
A
2
G
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
TIC108D
Repetitive peak off-state voltage (see Note 1)
TIC108M
VDRM
TIC108N
TIC108D
Repetitive peak reverse voltage
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
TIC108M
TIC108S
TIC108N
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
VRRM
IT(RMS)
Lead temperature 1.6 mm from case for 10 seconds
800
400
600
700
800
V
A
20
A
1.3
W
TC
-40 to +110
°C
TL
230
°C
PGM
Storage temperature range
V
3.2
IT(AV)
Peak gate power dissipation (pulse width ≤ 300 µs)
Operating case temperature range
700
A
ITSM
Average gate power dissipation (see Note 5)
600
5
Surge on-state current (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
UNIT
400
E
T
E
L
O
S
B
O
TIC108S
VALUE
IGM
PG(AV)
Tstg
0.2
0.3
-40 to +125
A
W
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT
VGT
IH
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
TEST CONDITIONS
MIN
dv/dt
NOTE
On-state voltage
Critical rate of rise of
off-state voltage
UNIT
RGK = 1 kΩ
TC = 110°C
400
µA
VR = rated VRRM
IG = 0
TC = 110°C
1
mA
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
1
mA
VAA = 12 V
RL = 100 Ω
TC = - 40°C
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
RGK = 1 kΩ
VAA = 12 V
RGK = 1 kΩ
0.2
1.2
0.4
TC = 110°C
TC = - 40°C
(see Note 6)
VD = rated VD
RGK = 1 kΩ
1
3.5
15
2
10
1.3
1.7
V
mA
RGK = 1 kΩ
IT = 5 A
0.6
0.2
Initiating IT = 20 mA
VAA = 12 V
0.5
TC = 110°C
E
T
E
L
O
S
B
O
20
V
V/µs
6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
MAX
VD = rated VDRM
Initiating IT = 20 mA
VT
TYP
TYP
MAX
UNIT
3.5
°C/W
62.5
°C/W
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT
MAX ANODE POWER DISSIPATED
vs
ANODE ON-STATE CURRENT
TI23AA
6
TJ = 110 °C
PA - Max Anode Power Dissipated - W
Continuous DC
5
4
Φ = 180°
3
2
0°
Angle
0
30
40
50
60
10
E
T
E
L
O
S
B
O
180°
Φ
Conduction
1
70
80
90
100
1
110
1
10
100
TC - Case Temperature - °C
IT - Anode Forward Current - A
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI23AC
100
TC ≤ 80°C
ITM - Peak Half-Sine-Wave Current - A
TI23AB
100
10
RθJC(t) - Transient Thermal Resistance - °C/W
IT(AV) - Maximum Average Anode Forward Current - A
DERATING CURVE
No Prior Device Conduction
Gate Control Guaranteed
10
1
TI23AD
1
0·1
1
10
100
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
Figure 4.
100
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
10
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC23AA
VAA = 12 V
VAA = 12 V
RL = 100 Ω
RL = 100 Ω
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
TC23AB
0.8
tp(g) ≥ 20 µs
1
0.7
RGK = 1 kΩ
tp(g) ≥ 20 µs
0.6
0.5
E
T
E
L
O
S
B
O
0.4
0·1
-60
-40
-20
0
20
40
60
80
100
0.3
-50
120
TC - Case Temperature - °C
-25
0
75
100
125
Figure 6.
HOLDING CURRENT
vs
CASE TEMPERATURE
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
TC23AD
2.6
TC23AE
TC = 25 °C
VAA = 12 V
RGK = 1 kΩ
2.4
VTM - Peak On-State Voltage - V
IH - Holding Current - mA
50
TC - Case Temperature - °C
Figure 5.
10
25
Initiating IT = 20 mA
1
2.2
tp = 300 µs
Duty Cycle ≤ 2 %
2.0
1.8
1.6
1.4
1.2
1.0
0.1
-50
-25
0
25
50
75
TC - Case Temperature - °C
Figure 7.
100
125
0.8
0·1
1
Figure 8.
4
10
ITM - Peak On-State Current - A
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.