TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIP34 -80 TIP34A -100 E T E L O S B O TIP34B V CBO -140 TIP34 -40 TIP34A TIP34B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT V -120 TIP34C TIP34C Emitter-base voltage VALUE -60 V -80 -100 VEBO -5 V IC -10 A ICM -15 A IB -3 A Ptot 80 W Ptot 3.5 W ½LIC2 62.5 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) TIP34 -40 TIP34A -60 TIP34B -80 TIP34C -100 TYP MAX V VCE = -80 V VBE = 0 TIP34 -0.4 Collector-emitter VCE = -100 V VBE = 0 TIP34A -0.4 cut-off current VCE = -120 V VBE = 0 TIP34B -0.4 VCE = -140 V VBE = 0 TIP34C -0.4 Collector cut-off VCE = -30 V IB = 0 TIP34/34A -0.7 current VCE = -60 V IB = 0 TIP34B/34C -0.7 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = - 1A transfer ratio VCE = -4 V IC = -3 A Collector-emitter IB = -0.3 A IC = -3 A saturation voltage IB = -2.5 A IC = -10 A Emitter cut-off current Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = IC = -4 V -1 (see Notes 5 and 6) 20 mA mA 100 -1 (see Notes 5 and 6) -3 A mA 40 -4 -1.6 (see Notes 5 and 6) E T E L O S B O VCE = UNIT -4 V IC = -10 A VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 -3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time VBE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AA VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·01 -0·1 TCS634AB -10 IC = IC = IC = IC = -1·0 -0·1 E T E L O S B O -1·0 -0·01 -0·01 -10 -1 A -3 A -6 A -10 A IC - Collector Current - A -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·6 TCS634AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS634AA tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 TIP34 TIP34A TIP34B TIP34C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.