OBSOLETE

TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
TIP34 Series
●
80 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
15 A Peak Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIP33
80
TIP33A
100
E
T
E
L
O
S
B
O
TIP33B
V CBO
140
TIP33
40
TIP33A
TIP33B
VCEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
UNIT
120
TIP33C
TIP33C
Emitter-base voltage
VALUE
60
80
V
V
100
VEBO
5
V
IC
10
A
ICM
15
A
IB
3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
½LIC2
62.5
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
250
°C
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
TIP33
40
TIP33A
60
TIP33B
80
TIP33C
100
TYP
MAX
V
VCE = 80 V
VBE = 0
TIP33
0.4
Collector-emitter
VCE = 100 V
VBE = 0
TIP33A
0.4
cut-off current
VCE = 120 V
VBE = 0
TIP33B
0.4
VCE = 140 V
VBE = 0
TIP33C
0.4
Collector cut-off
VCE = 30 V
IB = 0
TIP33/33A
0.7
current
VCE = 60 V
IB = 0
TIP33B/33C
0.7
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC =
1A
transfer ratio
VCE =
4V
IC =
3A
Collector-emitter
IB =
0.3 A
IC =
3A
saturation voltage
IB =
2.5 A
IC = 10 A
Emitter cut-off
current
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
VCE =
IC =
4V
1
(see Notes 5 and 6)
20
mA
mA
100
1
(see Notes 5 and 6)
3A
mA
40
4
1.6
(see Notes 5 and 6)
E
T
E
L
O
S
B
O
VCE =
UNIT
4V
IC = 10 A
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.56
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 6 A
IB(on) = 0.6 A
IB(off) = -0.6 A
toff
Turn-off time
VBE(off) = -4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.6
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS633AA
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·01
0·1
TCS633AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
1·0
0·1
E
T
E
L
O
S
B
O
1·0
0·01
0·01
10
1A
3A
6A
10 A
IC - Collector Current - A
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
TCS633AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1
10
IC - Collector Current - A
Figure 3.
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP33, TIP33A, TIP33B, TIP33C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS633AA
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
TIP33
TIP33A
TIP33B
TIP33C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.