TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP34 Collector-base voltage (IE = 0) TIP34A TIP34B VCBO TIP34C Collector-emitter voltage (IB = 0) TIP34B Continuous collector current Peak collector current (see Note 1) Continuous base current -100 V -120 -140 -40 VCEO TIP34C Emitter-base voltage UNIT -80 TIP34 TIP34A VALUE -60 V -80 -100 V EBO -5 V IC -10 A ICM -15 A IB -3 A W Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W ½LIC 2 62.5 mJ °C Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter breakdown voltage IC = -30 mA MIN IB = 0 (see Note 5) TIP34 -40 TIP34A -60 TIP34B -80 TIP34C -100 TYP MAX V VCE = -80 V VBE = 0 TIP34 -0.4 Collector-emitter V CE = -100 V V BE = 0 TIP34A -0.4 cut-off current V CE = -120 V V BE = 0 TIP34B -0.4 V CE = -140 V V BE = 0 TIP34C -0.4 Collector cut-off VCE = -30 V IB = 0 TIP34/34A -0.7 current V CE = -60 V IB = 0 TIP34B/34C -0.7 VEB = IC = 0 Emitter cut-off current -5 V -1 Forward current VCE = -4 V IC = -1 A transfer ratio V CE = -4 V IC = -3 A Collector-emitter IB = -0.3 A IC = -3 A saturation voltage IB = -2.5 A IC = -10 A (see Notes 5 and 6) 20 -4 VCE = -4 V IC = voltage V CE = -4 V IC = -10 A VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 current transfer ratio Small signal forward current transfer ratio mA mA 100 -1 Base-emitter Small signal forward mA 40 (see Notes 5 and 6) -3 A UNIT -1.6 (see Notes 5 and 6) -3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time V BE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TIP34, TIP34A, TIP34B, TIP34C .PNP SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AA VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·01 -0·1 -1·0 IC = -1 A IC = -3 A IC = -6 A IC = -10 A -1·0 -0·1 -0·01 -0·01 -10 TCS634AB -10 IC - Collector Current - A -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·6 TCS634AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 IC - Collector Current - A SAS634AA -1·0 -0·1 TIP34 TIP34A TIP34B TIP34C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 TIP34, TIP34A, TIP34B, TIP34C .PNP SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT MDXXAW INFORMATION 5 TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS JULY 1968 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION