BOURNS BD546

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD545 Series
●
85 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
BD546B
V CBO
Continuous collector current
-80
-100
BD546
-40
BD546B
VCEO
-60
-80
V
V
-100
BD546C
Emitter-base voltage
-60
BD546C
BD546A
UNIT
-40
BD546
BD546A
VALUE
VEBO
-5
V
IC
-15
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
85
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Operating free air temperature range
TA
-65 to +150
°C
Operating junction temperature range
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -30 mA
MIN
IB = 0
(see Note 4)
BD546
-40
BD546A
-60
BD546B
-80
BD546C
-100
TYP
MAX
V
VCE = -40 V
VBE = 0
BD546
-0.4
Collector-emitter
VCE = -60 V
VBE = 0
BD546A
-0.4
cut-off current
VCE = -80 V
VBE = 0
BD546B
-0.4
VCE = -100 V
VBE = 0
BD546C
-0.4
Collector cut-off
VCE = -30 V
IB = 0
BD546/546A
-0.7
current
VCE = -60 V
IB = 0
BD546B/546C
-0.7
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
-1
VCE =
-4 V
IC =
-1 A
VCE =
-4 V
IC =
-5 A
VCE =
-4 V
IC = -10 A
IB =
-2 A
IC = -10 A
VCE =
-4 V
IC = -10 A
(see Notes 4 and 5)
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
Small signal forward
current transfer ratio
-5 A
-0.8
saturation voltage
current transfer ratio
mA
10
IC =
Small signal forward
mA
25
IB = -625 mA
voltage
mA
60
(see Notes 4 and 5)
Collector-emitter
Base-emitter
UNIT
(see Notes 4 and 5)
-1
-1.8
V
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.47
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -6 A
IB(on) = -0.6 A
IB(off) = 0.6 A
0.4
µs
toff
Turn-off time
VBE(off) = 4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS634AJ
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1
-0·1
-1·0
-10
TCS634AB
-10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
-1 A
-3 A
-6 A
-10 A
-1·0
-0·1
-0·01
-0·01
IC - Collector Current - A
-0·1
-1·0
-10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
TCS634AC
VBE - Base-Emitter Voltage - V
VCE = -4 V
TC = 25 °C
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS634AE
-10
-1·0
-0·1
BD546
BD546A
BD546B
BD546C
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AC
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
15,2
14,7
ø 4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5