BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD545 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) (see Note 1) BD546B V CBO Continuous collector current -80 -100 BD546 -40 BD546B VCEO -60 -80 V V -100 BD546C Emitter-base voltage -60 BD546C BD546A UNIT -40 BD546 BD546A VALUE VEBO -5 V IC -15 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 85 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 4) BD546 -40 BD546A -60 BD546B -80 BD546C -100 TYP MAX V VCE = -40 V VBE = 0 BD546 -0.4 Collector-emitter VCE = -60 V VBE = 0 BD546A -0.4 cut-off current VCE = -80 V VBE = 0 BD546B -0.4 VCE = -100 V VBE = 0 BD546C -0.4 Collector cut-off VCE = -30 V IB = 0 BD546/546A -0.7 current VCE = -60 V IB = 0 BD546B/546C -0.7 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio -1 VCE = -4 V IC = -1 A VCE = -4 V IC = -5 A VCE = -4 V IC = -10 A IB = -2 A IC = -10 A VCE = -4 V IC = -10 A (see Notes 4 and 5) VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 Small signal forward current transfer ratio -5 A -0.8 saturation voltage current transfer ratio mA 10 IC = Small signal forward mA 25 IB = -625 mA voltage mA 60 (see Notes 4 and 5) Collector-emitter Base-emitter UNIT (see Notes 4 and 5) -1 -1.8 V V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.47 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time VBE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AJ VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·1 -1·0 -10 TCS634AB -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = IC = IC = IC = -1 A -3 A -6 A -10 A -1·0 -0·1 -0·01 -0·01 IC - Collector Current - A -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·6 TCS634AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25 °C -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS634AE -10 -1·0 -0·1 BD546 BD546A BD546B BD546C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AC Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5