MA111 Zener Diodes Composite Elements MA3047W Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 +0.1 0.4 –0.05 1.45 0.65±0.15 1 0.5 0.95 2 3 +0.1 0.16 –0.06 +0.2 0.1 to 0.3 Rating Unit 100 mA Single IF(AV) Double IF(AV) 75 mA Single IFRM 200 mA Double IFRM 150 mA Single Ptot *1 200 mW Double Ptot *1 150 mW Non-repetitive reverse surge power dissipation PZSM*2 15 W Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to + 150 ˚C Average forward current Instanious forward current Total power dissipation 0 to 0.1 Symbol Parameter 0.8 1.1 –0.1 ■ Absolute Maximum Ratings (Ta= 25˚C) 0.6 –0 0.2 +0.1 +0.1 0.4 –0.05 +0.2 wiring in parallel of MA3047 4 0.95 2.9 –0.05 1.9±0.2 type package (4-pin) ● Two-element 1.5 –0.05 0.5R ■ Features ● Mini +0.25 0.65±0.15 0.4±0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) ■ Internal Connection 4 1 3 2 *1 With a printed-circuit board *2 t=100µ s, Tj=150˚C 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Symbol Condition min IF=10mA VF *2 Zener voltage VZ Operating resistance RZ IZ= 5mA IZ= 5mA Reverse current IR VR= 1V Temperature coefficient of zener voltage SZ *3 IZ= 5mA 4.4 4.7W max 0.8 0.9 4.7 5.0 V 50 80 Ω –1.4 0.2 3 – 3.5 Note 1. Rated input/output frequency : 5MHz 2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 125˚C ■ Marking typ Unit V µA mV/˚C MA3047W Zener Diodes Composite Elements IF – VF VF – Ta IR – VR 10000 1.6 100 Ta=150˚C 100˚C 25˚C 1 0.1 Ta=150˚C –20˚C 100˚C 25˚C 0.2 0.4 0.6 Forward voltage 0.8 1.0 IR (nA) 1.0 IF=100mA 0.8 10mA 0.6 3mA 1000 100 10 0.4 0.2 0 –40 0.01 0 1.2 Reverse current VF (V) 10 Forward voltage Forward curren IF (mA) 1.4 1.2 VF (V) 1 0 40 80 120 Ambient temperature IZ – VZ Ta 160 0 200 1.0 2.0 IR – Ta 4.0 5.0 6.0 VR (V) RZ – IZ 10000 100 3.0 Reverse voltage (˚C) 3000 Ta=25˚C 1000 100˚C 25˚C 0.1 RZ (Ω) –20˚C 1000 VR=1V 100 0.5V 10 Operating resistance IR (nA) Ta=150˚C 1 Reverse current Zener current IZ (mA) 10 300 100 30 0.01 10 1 –40 0.001 0 1.0 2.0 3.0 4.0 Zener voltage 5.0 6.0 7.0 0 120 160 Ta (˚C) 1 80 60 40 10 30 50 IZ (mA) PZSM – tW 1000 Non-repetitive reverse PZSM (W) surge power dissipation Power dissipation 100 5 Heat sink Copper foil 0.8mm × 10mm 280 Ptot (mW) 120 3 Zener current 320 f=1MHz Ta=25˚C 140 3 0.3 0.5 200 Ptot – Ta 160 CD (pF) 80 Ambient temperature VZ (V) CD – VR Diode capacitance 40 240 PZSM tW Non repetitive 100 200 160 120 80 10 40 20 0 0 0 1 2 3 Reverse voltage 4 5 VR (V) 6 0 40 80 120 Ambient temperature 160 Ta 200 (˚C) 240 1 0.03 0.1 0.3 1 Pulse width 3 tW (ms) 10 30