Schottky Barrier Diodes (SBD) MA3X704, MA3X704A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) MA3X704 Peak reverse voltage MA3X704 Symbol Rating Unit VR 15 V MA3X704A 15 IFM 150 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) V mA 30 Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1.45 + 0.1 + 0.1 0.16 − 0.06 0.1 to 0.3 0.4 ± 0.2 30 VRM MA3X704A Peak forward current 3 0 to 0.1 Parameter 0.95 1.9 ± 0.2 1.1 ■ Absolute Maximum Ratings Ta = 25°C 1 2 + 0.2 − 0.1 • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 0.65 ± 0.15 0.8 ■ Features 1.5 0.95 + 0.2 2.9 − 0.05 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For switching circuits For wave detection circuit Marking Symbol • MA3X704 : M1K • MA3X704A : M1L Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA3X704 Conditions IR MA3X704A Forward voltage (DC) Min Typ Max Unit VR = 15 V 200 nA VR = 30 V 300 VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 pF Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3X704, MA3X704A Schottky Barrier Diodes (SBD) Common characteristics charts IF V F VF Ta 103 1.0 0.9 75°C 25°C Ta = 125°C 0.8 − 20°C 10 1 10−1 Forward voltage VF (V) Forward current IF (mA) 102 0.7 IF = 30 mA 0.6 10 mA 0.5 0.4 0.3 1 mA 0.2 0.1 10−2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of MA3X704 IR VR Ct VR 103 IR Ta 102 3 f = 1 MHz Ta = 25°C Ta = 125°C 10 75°C 1 25°C 10−1 10−2 0 5 10 15 20 25 2 1 0 30 Reverse current IR (µA) Terminal capacitance Ct (pF) Reverse current IR (µA) 102 VR = 15 V 7.5 V 0 Reverse voltage VR (V) 5 10 15 20 25 10 1 10−1 10−2 −40 30 Reverse voltage VR (V) 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of MA3X704A IR VR Ct VR 103 IR T a 102 3 VR = 30 V 15 V Ta = 125°C 10 75°C 1 25°C 10−1 10−2 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 Reverse current IR (µA) Reverse current IR (µA) 102 Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 2 1 0 0 5 10 15 20 25 Reverse voltage VR (V) 30 10 1 10−1 10−2 −40 0 40 80 120 160 Ambient temperature Ta (°C) 200