Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1.45 0.95 + 0.1 + 0.1 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Unit 0.16 − 0.06 1.1 Rating 3 0.8 + 0.2 − 0.1 Symbol 1 2 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) 1.9 ± 0.2 • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 0.65 ± 0.15 1.5 − 0.05 0.95 + 0.2 2.9 − 0.05 ■ Features Parameter + 0.25 0.65 ± 0.15 0.4 − 0.05 For super-high speed switching circuit For small current rectification 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3U Internal Connection 1 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 30 µA 0.55 V Reverse current (DC) IR VR = 50 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X787 Schottky Barrier Diodes (SBD) IF V F VF Ta Forward current IF (mA) − 20°C Ta = 125°C 10 Forward voltage VF (V) 75°C 25°C 102 1 10−1 10−2 IR VR 1.0 104 0.8 103 Ta = 125°C 102 75°C 0.6 0.4 IF = 100 mA 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 40 80 120 160 200 IR T a 103 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 12 8 0 10 20 30 40 Reverse voltage VR 2 1V 10 1 4 0 VR = 50 V 30 V 102 50 (V) 60 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 10 20 30 40 50 Reverse voltage VR (V) 104 16 25°C 10−1 0 Ct VR 20 10 1 10 mA 3 mA Ambient temperature Ta (°C) 24 Reverse current IR (µA) 103 200 60