PANASONIC MA3X789

Schottky Barrier Diodes (SBD)
MA3X789
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8 − 0.3
1.45
0.95
0.65 ± 0.15
1
3
+ 0.1
• Allowing to rectify under (IF(AV) = 200 mA) condition
• Reverse voltage VR (DC value) = 60 V guaranteed
1.9 ± 0.2
■ Features
1.5
0.95
+ 0.2
2.9 − 0.05
0.65 ± 0.15
+ 0.25
− 0.05
2
V
Peak reverse voltage
VRM
60
V
Average forward current
IF(AV)
500
mA
Non-repetitive peak forward
surge current*
IFSM
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
+ 0.1
0.16 − 0.06
Unit
60
0.1 to 0.3
0.4 ± 0.2
0 to 0.1
Rating
VR
0.8
Symbol
1.1
Parameter
+ 0.2
− 0.1
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC)
0.4 − 0.05
For super-high speed switching circuit
For small current rectification
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode
EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M3W
Internal Connection
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 50 V
100
µA
Forward voltage (DC)
VF
IF = 500 mA
0.65
V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
60
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
4.5
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 100 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3X789
Schottky Barrier Diodes (SBD)
IF  V F
IR  V R
103
Ct  VR
104
120
Ta = 125°C
Ta = 125°C
75°C
25°C
10
1
10−1
10−2
0
0.1
0.2
0.3
0.4
0.5
0.6
102
25°C
10
IF(surge)  tW
Ta = 25°C
300
IF(surge)
tW
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
10
30
Pulse width tW (ms)
10−1
0
20
40
60
80
100
Reverse voltage VR (V)
1 000
Forward surge current IF(surge) (A)
75°C
1
Forward voltage VF (V)
2
Terminal capacitance Ct (pF)
103
Reverse current IR (µA)
Forward current IF (mA)
102
100
120
100
80
60
40
20
0
0
10
20
30
40
50
Reverse voltage VR (V)
60