Schottky Barrier Diodes (SBD) MA3X788 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 1.9 ± 0.2 ■ Features 1.5 0.95 + 0.2 2.9 − 0.05 0.65 ± 0.15 + 0.25 − 0.05 2 V VRRM 60 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Peak forward current + 0.1 0.16 − 0.06 Unit 60 0.8 Rating VR 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Repetitive peak reverse voltage Symbol + 0.2 Parameter 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) 0.4 − 0.05 For super-high speed switching circuit For small current rectification 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3V Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 µA 0.65 V Reverse current (DC) IR VR = 50 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X788 Schottky Barrier Diodes (SBD) IF V F VF Ta 103 0.8 103 100°C 25°C 1 10−1 IF = 200 mA 0.6 0.4 100 mA Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) − 20°C 10 104 Ta = 150°C Ta = 150°C 102 IR VR 1.0 75°C 102 25°C 10 1 0.2 10 mA 10−2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) 10−1 0 40 80 120 160 200 Ct VR IR T a 104 30 103 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 25 20 15 10 0 10 20 30 40 50 Reverse voltage VR (V) 2 5V 10 1 5 0 VR = 30 V 102 60 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 10 20 30 40 50 Reverse voltage VR (V) Ambient temperature Ta (°C) 200 60