PTFC270101M V1 R1K Data Sheet (397 KB, EN)

PTFC270101M
High Power RF LDMOS Field Effect Transistor
10 W, 28 V, 900 – 2700 MHz
Description
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
•
Unmatched input and output
•
Typical CW performance, 2170 MHz, 28 V
- Output power @ P1dB = 10 W
- Gain = 20 dB
- Efficiency = 60%
•
Typical two-carrier WCDMA performance, 2170
MHz, 28 V, 8 dB PAR
- Output power = 1.3 W avg
- Gain = 21 dB
- Efficiency = 21%
- ACPR = –44.9 dBc @ 5 MHz
•
Capable of handling 10:1 VSWR @ 28 V, 10 W
(CW) output power
10
•
Integrated ESD protection
0
•
Pb-free and RoHS compliant
70
23
60
Gain
21
50
20
40
19
30
18
20
Efficiency
17
16
c270101m-2.1-gr1c
24
26
28
30
32
34
36
38
Drain Efficiency (%)
22
Gain (dB)
PTFC270101M
Package PG-SON-10
40
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
Typ
Max
Unit
Gps
19.5
20.5
—
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 21
Rev. 04, 2015-04-01
PTFC270101M
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10
µA
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
1
—
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
1
—

Operating Gate Voltage
VDS = 28 V, IDQ = 120 mA
VGS
2.2
2.7
3.2
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage
VDD
0 to +32
V
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (TCASE = 70°C, 12 W CW)
RJC
4.04
°C/W
Junction Temperature
Moisture Sensitivity Level
Level
Test Standard
3
IPC/JEDEC J-STD-020
Package Temperature
Unit
260
°C
ESD Ratings
Test Type
Rated Class
Standard
Human Body Model (HBM)
1A
ANSI/ESDA/JEDEC JS-001
Charge Device Model (CDM)

JESD 22-C101
Ordering Information
Type
Order Code
Package and Description
Shipping
PTFC270101M V1 R1K
PTFC270101MV1R1KXUMA1
PG-SON-10, molded plastic, SMD
Tape & Reel, 1000 pcs
Data Sheet
2 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (data taken in production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
60
22
21
50
20
40
19
30
Efficiency
20
17
16
c270101m-2.1-gr1a
24
26
28
30
32
34
36
38
21
50
20
40
19
30
Efficiency
18
10
17
0
16
40
20
10
c270101m-2.1-gr1b
24
26
Output Power (dBm)
28
30
32
34
36
38
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
45
-35
35
-45
25
-55
15
-65
c270101m-2.1-gr2a
24
26
28
30
32
34
36
38
5
IMD Low
IMD Up
ACPR
Efficiency
-15
-25
55
45
-35
35
-45
25
-55
15
-65
40
c270101m-2.1-gr2b
24
Output Power (dBm)
Data Sheet
IMD (dBc), ACPR (dBc)
55
Drain Efficiency (%)
-25
65
-5
65
IMD Low
IMD Up
ACPR
Efficiency
-15
0
40
Output Power (dBm)
-5
IMD (dBc), ACPR (dBc)
60
Gain
26
28
30
32
34
36
38
Drain Efficiency (%)
18
70
Drain Efficiency (%)
Gain
23
Gain (dB)
Gain (dB)
22
70
Drain Efficiency (%)
23
5
40
Output Power (dBm)
3 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
CW Performance
at selected supply voltage
VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
IDQ = 120 mA, ƒ = 2110 MHz
65
66
24
ACPR
45
Efficiency
-35
35
-45
25
-55
15
-65
c270101m-2.1-gr2c
24
26
28
30
32
34
36
38
54
42
20
30
18
Efficiency
VDD = 24 V
VDD = 28 V
VDD = 32 V
16
5
14
40
c270101m-2.1-gr5a
24
26
28
36
38
IDQ = 120 mA, ƒ = 2140 MHz
IDQ = 120 mA, ƒ = 2170 MHz
24
54
22
20
42
18
30
Efficiency
VDD = 24 V
VDD = 28 V
VDD = 32 V
16
14
c270101m-2.1-gr5b
26
28
30
32
34
36
38
40
Power Gain (dB)
66
Efficiency (%)
Power Gain (dB)
34
CW Performance
at selected supply voltage
Gain
40
6
42
66
42
18
30
Efficiency
16
6
14
VDD = 24 V
VDD = 28 V
VDD = 32 V
18
c270101m-2.1-gr5c
24
42
54
Gain
20
18
Output Power (dBm)
Data Sheet
32
CW Performance
at selected supply voltage
24
24
30
Output Power (dBm)
Output Power (dBm)
22
18
26
28
30
32
34
36
38
Efficiency (%)
-25
Gain
22
Efficiency (%)
55
IMD Up
Power Gain (dB)
-15
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
IMD Low
40
6
42
Output Power (dBm)
4 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA
-20
Gain
22
-30
54
20
42
18
30
Efficiency
-40
2110 MHz
2140 MHz
2170 MHz
16
-50
14
c270101m-2.1-gr3
24
26
28
30
32
34
36
38
Output Power (dBm)
18
c270101m-2.1-gr4
24
40
26
28
30
32
34
36
38
40
Efficiency (%)
2170 IMD-U
2140 IMD-U
2110 IMD-U
2170 IMD-L
2140 IMD-L
2110 IMD-L
Gain (dB)
IMD, Up and Low (dBc)
66
24
-10
6
42
Output Power (dBm)
Small Signal CW Performance
Gain and Input Return Loss
VDD = 28 V, IDQ = 120 mA
0
22
21
-5
20
-10
19
-15
18
-20
Input Return Loss (dB)
Gain (dB)
Gain
Input Return Loss
17
1975
-25
2275
c270101m-2.1-gr6_v2
2075
2175
Frequency (MHz)
Data Sheet
5 of 21
Rev. 04, 2015-04-01
PTFC270101M
Broadband Circuit Impedance
Z Source 
Z Load 
D
Freq
[MHz]
R
jX
R
jX
2110
2.1
–6.7
5.6
–6.1
2140
2.1
–6.5
5.6
–5.8
2170
2.1
–6.3
5.6
–5.5
Z Source
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA
P1dB
Class AB
Max Output Power
Freq
[MHz]
Zs
[]
2110
Zl
Max PAE
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
2.1 – 6.1
7.15 – 7.2
19.4
42.06
16.07
2140
2.1 – 6.5
6.54 – 7.6
19.2
42.05
2170
2.1 – 6.6
7.2 – 7.9
19.3
41.93
Zl
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
59.5
4.8 – 4
21
40.81
12.05
66.8
16.03
59.3
5.14 – 4.4
21
40.92
12.36
65.8
15.6
58.2
5.2 – 4.8
21
40.84
12.13
64.6
Reference Circuit, 2100 MHz
DUT
PTFC270101M V1
Reference Circuit No.
LTN/PTFC270101M V1
Order Code
LTNPTFC270101MV1TOBO1
PCB
Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet
6 of 21
Rev. 04, 2015-04-01
PTFC270101M
Reference Circuit, 2100 MHz (cont.)
VDD
C108
VGG
C104
R102
C107
C105
C103
C106
R101
DUT
RF_IN
RF_OUT
C102
C101
PTFC270101M_05
2100 MHZ
RO4350, .020 (169)
pt fc 2 7 01 0 1 m_c d_ 1 0 -2 2 -1 4
Assembly diagram for reference circuit LTN/PTFC270101M V1, 2100 MHz (not to scale)
Components Information
Component
Description
Manufacturer
P/N
C101
Capacitor, 1.5 pF
ATC
ATC600F1R5CW250
C102, C103,
C106, C107
Capacitor, 12 pF
ATC
ATC600F120JW250
C104
Capacitor, 1.0 µF
TDK Corporation
C4532X7R2A105M230KA
C105
Capacitor, 1.2 pF
ATC
ATC600F1R2CW250
C108
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
R101, R102
Resistor, 10 ohms
Panasonic Electronic Components
ERJ-8GEYJ100V
Data Sheet
7 of 21
Rev. 04, 2015-04-01
PTFC270101M
RF Characteristics
Two-carrier WCDMA Characteristics (not subject to production test)
VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 947.5 MHz, ƒ2 = 957.5 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
23
—
dB
Drain Efficiency
D
—
20
—
%
Intermodulation Distortion
IMD
—
–39
—
dBc
Typical RF Performance, 920 – 960 MHz (data taken in production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
60
24
Gain (dB)
Gain
23
50
22
40
21
30
20
20
19
Efficiency
18
c270101m-900-gr1a
24
26
28
30
32
34
36
38
40
23
50
22
40
21
30
20
20
Efficiency
19
0
18
10
c270101m-900-gr1b
24
Output Power (dBm)
Data Sheet
60
Gain
10
42
70
Drain Efficiency (%)
25
Gain (dB)
24
70
Drain Efficiency (%)
25
26
28
30
32
34
36
38
40
0
42
Output Power (dBm)
8 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz.
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
70
24
50
22
40
21
30
20
20
Efficiency
19
10
18
c270101m-900-gr1c
26
28
30
32
34
36
38
40
0
IMD Low
IMD Up
ACPR
Efficiency
-15
-25
45
-35
35
-45
25
-55
15
-65
42
c270101m-900-gr2a
24
26
28
30
32
34
36
38
40
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
65
-5
-5
65
IMD Low
IMD Low
55
ACPR
-25
45
Efficiency
-35
35
-45
25
-55
15
-65
c270101m-900-gr2b
24
26
28
30
32
34
36
38
40
-15
IMD (dBc), ACPR (dBc)
IMD Up
Drain Efficiency (%)
-15
5
55
IMD Up
ACPR
-25
45
Efficiency
-35
35
-45
25
-55
15
-65
42
c270101m-900-gr2c
24
26
28
30
32
34
36
38
40
5
42
Output Power (dBm)
Output Power (dBm)
Data Sheet
5
42
Output Power (dBm)
Output Power (dBm)
IMD (dBc), ACPR (dBc)
55
Drain Efficiency (%)
24
IMD (dBc), ACPR (dBc)
Gain (dB)
23
Drain Efficiency (%)
60
Gain
65
-5
Drain Efficiency (%)
25
9 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA
78
26
-35
66
Gain
54
22
960 MHz
940 MHz
920 MHz
20
30
18
16
-45
26
28
30
32
34
36
38
40
c270101m-900-gr4
24
42
28
32
36
40
6
44
Output Power (dBm)
Output Power (dBm)
CW Performance
at selected supply voltage
Small Signal CW Performance
Gain & Input Return Loss
VDD = 28 V, IDQ = 120 mA
IDQ = 120 mA, ƒ = 920 MHz
22
26
-5
24
-10
-15
20
-20
-25
Power Gain (dB)
Gain
0
Input Return Loss (dB)
24
Gain (dB)
18
Efficiency
14
c270101m-900-gr3
24
42
78
Gain
66
VDD = 24 V
VDD = 28 V
VDD = 32 V
22
20
54
42
30
18
Efficiency
16
Efficiency (%)
-25
24
Efficiency (%)
920 IMDL
920 IMDU
940 IMDL
940 IMDU
960 IMDL
960 IMDU
Gain (dB)
IMD (dBc)
-15
18
Input Return Loss
18
14
-30
1150
c270101m-900-gr6_v2
750
850
950
1050
28
32
36
40
6
44
Output Power (dBm)
Frequency (MHz)
Data Sheet
c270101m-900-gr5a
24
10 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
CW Performance
at selected supply voltage
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 940 MHz
IDQ = 120 mA, ƒ = 960 MHz
66
24
Gain
66
22
VDD = 24 V
VDD = 28 V
VDD = 32 V
54
54
VDD = 24 V
VDD = 28 V
VDD = 32 V
20
42
18
30
16
18
Efficiency
c270101m-900-gr5b
28
32
20
42
18
30
16
18
Efficiency
14
24
78
Efficiency (%)
Power Gain (dB)
22
26
Power Gain (dB)
Gain
24
78
Efficiency (%)
26
36
40
6
14
44
c270101m-900-gr5c
24
28
Output Power (dBm)
32
36
40
6
44
Output Power (dBm)
Broadband Circuit Impedance
Z Source 
Z Load 
D
Freq
[MHz]
R
jX
R
jX
920
2.5
3.8
16.3
3.0
940
2.5
4.0
16.3
3.2
960
2.5
4.3
16.3
3.4
Z Source
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA
P1dB
Class AB
Max Output Power
Max PAE
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
2.02 + j3.96
13.8 – j1.0
24.0
42.3
16.98
2.78 + j4.60
15.2 – j2.1
23.7
42.1
16.22
2.22 + j3.69
16.1 – j3.3
23.4
42.2
16.6
Freq
[MHz]
Zs
[
920
940
960
Data Sheet
Zl
11 of 21
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
62.3
15.7 + j8.1
26.0
40.7
11.75
70.1
60.5
17.5 + j8.4
25.7
40.3
10.72
67.8
57.7
16.5 + j8.1
25.7
40.3
10.72
65.8
Zl
Rev. 04, 2015-04-01
PTFC270101M
Reference Circuit, 900 MHz
DUT
PTFC270101M V1
Reference Circuit No.
LTN/PTFC270101M E4
Order Code
LTNPTFC270101ME4TOBO1
PCB
Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower
C108
C109
R109
C106
VDD
VGG
S3
S2
R101 C101
R106
R105
S1
C110
C103
R101
R108
C107
R102
R103
RF_IN
RF_OUT
R104
C105
C104
R110
DUT
C102
900 MHZ
PTFC270101M_04
RO4350, .020 (73)
pt fc 2 70 1 0 1m_ C D- 90 0 _ 01 - 23 - 15
Assembly diagram for reference circuit LTN/PTFC270101M E4, 900 MHz (not to scale)
Data Sheet
12 of 21
Rev. 04, 2015-04-01
PTFC270101M
Reference Circuit, 900 MHz (cont.)
Components Information
Component
Description
Manufacturer
P/N
C101
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C102
Capacitor, 5.6 pF
ATC
ATC600F5R6JW250
C103, C104 C105, Capacitor, 56 pF
C110
ATC
ATC100A560JW250
C106, C108, C109 Capacitor, .001 µF
Panasonic
ECJ-1VB1H102K
C107
TDK Corporation
C3225X7R1H225K250AB
R101, R102,
Resistor, 10 ohms
R103, R104, R110
Panasonic – ECG
ERJ-3GEYJ100V
R105, R108
Resistor, 10 ohms
Panasonic Electronic Components
ERJ-8GEYJ100V
R106
Resistor, 1.1K ohms
Panasonic Electronic Components
ERJ-8GEYJ112V
R107
Resistor, 1.2K ohms
Panasonic Electronic Components
ERJ-3GEYJ122V
R109
Resistor, 1.3K ohms
Panasonic Electronic Components
ERJ-3GEYJ132V
S1
Potentiometer, 2k ohms
Bourns Inc.
3224W-1-202E
S2
Voltage Regulator
Texas Instruments
LM78L05ACM
S3
Transistor
Infineon Technologies
BCP56-10
Capacitor, 2.2 µF
See next page for 2600 MHz operation
Data Sheet
13 of 21
Rev. 04, 2015-04-01
PTFC270101M
RF Characteristics
Two-carrier WCDMA Characteristics (not subject to production test)
VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
18.2
—
dB
Drain Efficiency
D
—
19.7
—
%
Intermodulation Distortion
IMD
—
–45
—
dBc
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
50
19
50
Gain (dB)
Gain
18
40
17
30
16
20
Efficiency
15
14
c270101m-2.6-gr1a
24
27
30
33
36
39
17
30
16
15
0
14
42
40
Gain
10
20
Efficiency
10
c270101m-2.6-gr1b
24
27
30
33
36
39
0
42
Output Power (dBm)
Output Power (dBm)
Data Sheet
18
Gain (dB)
19
60
Drain Efficiency (%)
20
Drain Efficiency (%)
Typical RF Performance, 2620 – 2690 MHz (data taken in production test fixture)
14 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 2620 – 2690 MHz (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
60
19
40
17
30
Efficiency
20
15
10
14
c270101m-2.6-gr1c
24
27
30
33
36
39
55
IMD Low
IMD Up
ACPR
Efficiency
-25
-35
35
-45
25
-55
15
-65
0
c270101m-2.6-gr2a
24
42
27
30
33
36
39
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
55
45
-35
35
-45
25
-55
15
-65
c270101m-2.6-gr2b
24
27
30
33
36
39
5
IMD Low
IMD Up
ACPR
Efficiency
-25
45
-35
35
-45
25
-55
15
-65
42
c270101m-2.6-gr2c
24
27
30
33
36
39
5
42
Output Power (dBm)
Output Power (dBm)
Data Sheet
55
-15
IMD & ACPR (dBc)
IMD Low
IMD Up
ACPR
Efficiency
Drain Efficiency (%)
-15
-25
5
42
Output Power (dBm)
Output Power (dBm)
IMD & ACPR (dBc)
45
Drain Efficiency (%)
16
IMD & ACPR (dBc)
18
Drain Efficiency (%)
50
Gain
Gain (dB)
-15
Drain Efficiency (%)
20
15 of 21
Rev. 04, 2015-04-01
PTFC270101M
Typical RF Performance, 2620 – 2690 MHz (cont.)
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 120 mA
-15
70
22
60
20
-35
-45
18
50
16
40
30
14
2620 MHz
2655 MHz
2690 MHz
12
2620 IMDL
2620 IMDU
2655 IMDL
2655 IMDU
2690 IMDL
2690 IMDU
-65
10
27
30
33
36
39
c270101m-2.6-gr4
24
42
28
32
36
40
0
44
Output Power (dBm)
Output Power (dBm)
CW Performance
CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 2620 MHz
at selected supply voltage
IDQ = 120 mA, ƒ = 2655 MHz
70
22
70
20
60
20
60
18
50
Gain
16
40
14
30
12
20
10
32 V
28 V
24 V
Efficiency
8
c270101m-2.6-gr5a
24
28
32
36
40
Power Gain (dB)
22
Efficiency (%)
Power Gain (dB)
10
Efficiency
8
c270101m-2.6-gr3
24
20
50
Gain
16
30
12
10
0
8
20
32 V
28 V
24 V
Efficiency
10
c270101m-2.6-gr5b
24
44
40
14
10
Output Power (dBm)
Data Sheet
18
Efficiency (%)
-55
Efficiency (%)
Gain
Gain (dB)
IMD (dBc)
-25
28
32
36
40
0
44
Output Power (dBm)
16 of 21
Rev. 04, 2015-04-01
PTFC270101M
CW Performance
Small Signal CW Performance
at selected supply voltage
IDQ = 120 mA, ƒ = 2690 MHz
Gain & Input Return Loss
VDD = 28 V, IDQ = 120 mA
70
20
60
20
Gain
16
40
14
30
12
20
10
32 V
28 V
24 V
Efficiency
8
28
32
36
40
Gain
15
-5
10
-10
Input Return Loss
10
c270101m-2.6-gr5c
24
Gain (dB)
50
18
0
5
2500
0
44
Input Return Loss (dB)
22
Efficiency (%)
Power Gain (dB)
Typical RF Performance, 2620 – 2690 MHz (cont.)
-15
2700
c270101m-2.6-gr6_v2
2550
2600
2650
Frequency (MHz)
Output Power (dBm)
Broadband Circuit Impedance
Z Source 
D
Z Load 
Freq
[MHz]
R
jX
R
jX
2620
2.2
–8.4
5.0
–12.4
2655
2.2
–8.2
5.0
–12.1
2690
2.2
–8.0
5.0
–11.8
Z Source
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA
P1dB
Class AB
Max Output Power
Freq
[MHz]
Zs
[]
2620
Max PAE
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
2.1 – j7.9
6.35 – j13
17.6
41.48
14.06
55.6
2655
2.2 – j8.2
5.93 – j13.2
17.4
41.46
14
54.7
2690
2.3 – j8.1
5.04 – j13.6
16.5
41.4
13.8
54.5
Data Sheet
Zl
17 of 21
Zl
[]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
4.35 – j10.8
19.2
40.5
11.22
61.68
4 – j11
19.1
40.43
11.04
60.8
3.54 – j11.5
18.71
40.21
10.5
61.23
Rev. 04, 2015-04-01
PTFC270101M
Reference Circuit, 2620 – 2690 MHz
DUT
PTFC270101M V1
Reference Circuit No.
LTN/PTFC270101M E3
Order Code
LTNPTFC270101ME3TOBO1
PCB
Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower
C101
VGG
C103
VDD
R104 C102
R101
R105
S3
S2
R102
S1
C107
C105
R103
C108
C104
R106
C110
DUT
RF_IN
C106
RF_OUT
C109
2600 MHZ
PTFC270101M_03_A RO4350, .020 (73)
pt fc 2 7 01 0 1 m_C D- 2 60 0 _ 01 - 23 - 1 5
Assembly diagram for reference circuit LTN/PTFC270101M E3, 2600 MHz (not to scale)
Data Sheet
18 of 21
Rev. 04, 2015-04-01
PTFC270101M
Reference Circuit, 2620 – 2690 MHz (cont.)
Components Information
Component
Description
Manufacturer
P/N
C101, C102, C103 Capacitor, 0.001 µF
Panasonic
ECJ-1VB1H102K
C104, C108, C109 Capacitor, 12 pF
ATC
ATC600S120JW250
C105
Capacitor, 2.2 µF
TDK Corporation
C3225X7R1H225K250AB
C106
Capacitor, 1 pF
ATC
ATC600S1R0CW250
C107
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C110
Capacitor, 0.3 pF
ATC
ATC600S0R3CW250
R101, R103
Resistor, 10 ohms
Panasonic Electronic Components
ERJ-8GEYJ100V
R102
Resistor, 1.2K ohms
Panasonic Electronic Components
ERJ-3GEYJ122V
R104
Resistor, 1.3K ohms
Panasonic Electronic Components
ERJ-3GEYJ132V
R105
Resistor, 470 ohms
Panasonic Electronic Components
ERJ-8GEYJ471V
R106
Resistor, 10 ohms
Panasonic Electronic Components
ERJ-3GEYJ100V
S1
Potentiometer, 2k ohms
Bourns Inc.
3224W-1-202E
S2
Voltage Regulator
Texas Instruments
LM78L05ACM
S3
Transistor
Infineon Technologies
BCP56-10
Data Sheet
19 of 21
Rev. 04, 2015-04-01
PTFC270101M
Package Outline Specifications
Package PG-SON-10
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [0.004].
4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm.
5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization) – source.
6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
20 of 21
Rev. 04, 2015-04-01
PTFC270101M V1
Revision History
Revision
Date
Data Sheet
Page
Subjects (major changes in each revision)
01
2013-03-05
Advance
all
Proposed specification for new product development.
02
2013-06-10
Advance
2
Lower maximum junction temperature spec, add thermal resistance.
02.1
2013-06-25
Advance
2
Rev. 02.1 reverts junction temperature back to 200°C
03
2014-12-17
Production
all
Complete production-released product information, including typical performance
graphs and reference circuits for 2100 MHz, 900 MHz and 2600 MHz operation.
Maximum Operating Voltage added, maximum VGS revised.
Maximum junction temperature raised to 225 °C. ESD ratings clarified.
2
2
04
2015-04-01
Production
5, 10,
17
Corrected IDQ in Small Signal CW Performance graphs
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
([email protected])
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-04-01
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
21 of 21
Rev. 04, 2015-04-01