PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth • Unmatched input and output • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60% • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR = –44.9 dBc @ 5 MHz • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power 10 • Integrated ESD protection 0 • Pb-free and RoHS compliant 70 23 60 Gain 21 50 20 40 19 30 18 20 Efficiency 17 16 c270101m-2.1-gr1c 24 26 28 30 32 34 36 38 Drain Efficiency (%) 22 Gain (dB) PTFC270101M Package PG-SON-10 40 Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 28 V, IDQ = 120 mA, POUT = 2.4 W avg, ƒ = 2170 MHz 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Gain Symbol Min Typ Max Unit Gps 19.5 20.5 — dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 21 Rev. 04, 2015-04-01 PTFC270101M DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — 1 — µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 1 — Operating Gate Voltage VDS = 28 V, IDQ = 120 mA VGS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 12 W CW) RJC 4.04 °C/W Junction Temperature Moisture Sensitivity Level Level Test Standard 3 IPC/JEDEC J-STD-020 Package Temperature Unit 260 °C ESD Ratings Test Type Rated Class Standard Human Body Model (HBM) 1A ANSI/ESDA/JEDEC JS-001 Charge Device Model (CDM) JESD 22-C101 Ordering Information Type Order Code Package and Description Shipping PTFC270101M V1 R1K PTFC270101MV1R1KXUMA1 PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs Data Sheet 2 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 2110 – 2170 MHz (data taken in production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 60 22 21 50 20 40 19 30 Efficiency 20 17 16 c270101m-2.1-gr1a 24 26 28 30 32 34 36 38 21 50 20 40 19 30 Efficiency 18 10 17 0 16 40 20 10 c270101m-2.1-gr1b 24 26 Output Power (dBm) 28 30 32 34 36 38 Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth VDD = 28 V, IDQ = 120 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 45 -35 35 -45 25 -55 15 -65 c270101m-2.1-gr2a 24 26 28 30 32 34 36 38 5 IMD Low IMD Up ACPR Efficiency -15 -25 55 45 -35 35 -45 25 -55 15 -65 40 c270101m-2.1-gr2b 24 Output Power (dBm) Data Sheet IMD (dBc), ACPR (dBc) 55 Drain Efficiency (%) -25 65 -5 65 IMD Low IMD Up ACPR Efficiency -15 0 40 Output Power (dBm) -5 IMD (dBc), ACPR (dBc) 60 Gain 26 28 30 32 34 36 38 Drain Efficiency (%) 18 70 Drain Efficiency (%) Gain 23 Gain (dB) Gain (dB) 22 70 Drain Efficiency (%) 23 5 40 Output Power (dBm) 3 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 2110 – 2170 MHz (cont.) Two-carrier WCDMA Drive-up CW Performance at selected supply voltage VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth -5 IDQ = 120 mA, ƒ = 2110 MHz 65 66 24 ACPR 45 Efficiency -35 35 -45 25 -55 15 -65 c270101m-2.1-gr2c 24 26 28 30 32 34 36 38 54 42 20 30 18 Efficiency VDD = 24 V VDD = 28 V VDD = 32 V 16 5 14 40 c270101m-2.1-gr5a 24 26 28 36 38 IDQ = 120 mA, ƒ = 2140 MHz IDQ = 120 mA, ƒ = 2170 MHz 24 54 22 20 42 18 30 Efficiency VDD = 24 V VDD = 28 V VDD = 32 V 16 14 c270101m-2.1-gr5b 26 28 30 32 34 36 38 40 Power Gain (dB) 66 Efficiency (%) Power Gain (dB) 34 CW Performance at selected supply voltage Gain 40 6 42 66 42 18 30 Efficiency 16 6 14 VDD = 24 V VDD = 28 V VDD = 32 V 18 c270101m-2.1-gr5c 24 42 54 Gain 20 18 Output Power (dBm) Data Sheet 32 CW Performance at selected supply voltage 24 24 30 Output Power (dBm) Output Power (dBm) 22 18 26 28 30 32 34 36 38 Efficiency (%) -25 Gain 22 Efficiency (%) 55 IMD Up Power Gain (dB) -15 Drain Efficiency (%) IMD (dBc), ACPR (dBc) IMD Low 40 6 42 Output Power (dBm) 4 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 2110 – 2170 MHz (cont.) Two-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA -20 Gain 22 -30 54 20 42 18 30 Efficiency -40 2110 MHz 2140 MHz 2170 MHz 16 -50 14 c270101m-2.1-gr3 24 26 28 30 32 34 36 38 Output Power (dBm) 18 c270101m-2.1-gr4 24 40 26 28 30 32 34 36 38 40 Efficiency (%) 2170 IMD-U 2140 IMD-U 2110 IMD-U 2170 IMD-L 2140 IMD-L 2110 IMD-L Gain (dB) IMD, Up and Low (dBc) 66 24 -10 6 42 Output Power (dBm) Small Signal CW Performance Gain and Input Return Loss VDD = 28 V, IDQ = 120 mA 0 22 21 -5 20 -10 19 -15 18 -20 Input Return Loss (dB) Gain (dB) Gain Input Return Loss 17 1975 -25 2275 c270101m-2.1-gr6_v2 2075 2175 Frequency (MHz) Data Sheet 5 of 21 Rev. 04, 2015-04-01 PTFC270101M Broadband Circuit Impedance Z Source Z Load D Freq [MHz] R jX R jX 2110 2.1 –6.7 5.6 –6.1 2140 2.1 –6.5 5.6 –5.8 2170 2.1 –6.3 5.6 –5.5 Z Source Z Load G S Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Freq [MHz] Zs [] 2110 Zl Max PAE [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 2.1 – 6.1 7.15 – 7.2 19.4 42.06 16.07 2140 2.1 – 6.5 6.54 – 7.6 19.2 42.05 2170 2.1 – 6.6 7.2 – 7.9 19.3 41.93 Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 59.5 4.8 – 4 21 40.81 12.05 66.8 16.03 59.3 5.14 – 4.4 21 40.92 12.36 65.8 15.6 58.2 5.2 – 4.8 21 40.84 12.13 64.6 Reference Circuit, 2100 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M V1 Order Code LTNPTFC270101MV1TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower Data Sheet 6 of 21 Rev. 04, 2015-04-01 PTFC270101M Reference Circuit, 2100 MHz (cont.) VDD C108 VGG C104 R102 C107 C105 C103 C106 R101 DUT RF_IN RF_OUT C102 C101 PTFC270101M_05 2100 MHZ RO4350, .020 (169) pt fc 2 7 01 0 1 m_c d_ 1 0 -2 2 -1 4 Assembly diagram for reference circuit LTN/PTFC270101M V1, 2100 MHz (not to scale) Components Information Component Description Manufacturer P/N C101 Capacitor, 1.5 pF ATC ATC600F1R5CW250 C102, C103, C106, C107 Capacitor, 12 pF ATC ATC600F120JW250 C104 Capacitor, 1.0 µF TDK Corporation C4532X7R2A105M230KA C105 Capacitor, 1.2 pF ATC ATC600F1R2CW250 C108 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Data Sheet 7 of 21 Rev. 04, 2015-04-01 PTFC270101M RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 947.5 MHz, ƒ2 = 957.5 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 23 — dB Drain Efficiency D — 20 — % Intermodulation Distortion IMD — –39 — dBc Typical RF Performance, 920 – 960 MHz (data taken in production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 60 24 Gain (dB) Gain 23 50 22 40 21 30 20 20 19 Efficiency 18 c270101m-900-gr1a 24 26 28 30 32 34 36 38 40 23 50 22 40 21 30 20 20 Efficiency 19 0 18 10 c270101m-900-gr1b 24 Output Power (dBm) Data Sheet 60 Gain 10 42 70 Drain Efficiency (%) 25 Gain (dB) 24 70 Drain Efficiency (%) 25 26 28 30 32 34 36 38 40 0 42 Output Power (dBm) 8 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 920 – 960 MHz (cont.) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz. 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 70 24 50 22 40 21 30 20 20 Efficiency 19 10 18 c270101m-900-gr1c 26 28 30 32 34 36 38 40 0 IMD Low IMD Up ACPR Efficiency -15 -25 45 -35 35 -45 25 -55 15 -65 42 c270101m-900-gr2a 24 26 28 30 32 34 36 38 40 Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 65 -5 -5 65 IMD Low IMD Low 55 ACPR -25 45 Efficiency -35 35 -45 25 -55 15 -65 c270101m-900-gr2b 24 26 28 30 32 34 36 38 40 -15 IMD (dBc), ACPR (dBc) IMD Up Drain Efficiency (%) -15 5 55 IMD Up ACPR -25 45 Efficiency -35 35 -45 25 -55 15 -65 42 c270101m-900-gr2c 24 26 28 30 32 34 36 38 40 5 42 Output Power (dBm) Output Power (dBm) Data Sheet 5 42 Output Power (dBm) Output Power (dBm) IMD (dBc), ACPR (dBc) 55 Drain Efficiency (%) 24 IMD (dBc), ACPR (dBc) Gain (dB) 23 Drain Efficiency (%) 60 Gain 65 -5 Drain Efficiency (%) 25 9 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 920 – 960 MHz (cont.) Two-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA 78 26 -35 66 Gain 54 22 960 MHz 940 MHz 920 MHz 20 30 18 16 -45 26 28 30 32 34 36 38 40 c270101m-900-gr4 24 42 28 32 36 40 6 44 Output Power (dBm) Output Power (dBm) CW Performance at selected supply voltage Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 120 mA IDQ = 120 mA, ƒ = 920 MHz 22 26 -5 24 -10 -15 20 -20 -25 Power Gain (dB) Gain 0 Input Return Loss (dB) 24 Gain (dB) 18 Efficiency 14 c270101m-900-gr3 24 42 78 Gain 66 VDD = 24 V VDD = 28 V VDD = 32 V 22 20 54 42 30 18 Efficiency 16 Efficiency (%) -25 24 Efficiency (%) 920 IMDL 920 IMDU 940 IMDL 940 IMDU 960 IMDL 960 IMDU Gain (dB) IMD (dBc) -15 18 Input Return Loss 18 14 -30 1150 c270101m-900-gr6_v2 750 850 950 1050 28 32 36 40 6 44 Output Power (dBm) Frequency (MHz) Data Sheet c270101m-900-gr5a 24 10 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 920 – 960 MHz (cont.) CW Performance at selected supply voltage CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 940 MHz IDQ = 120 mA, ƒ = 960 MHz 66 24 Gain 66 22 VDD = 24 V VDD = 28 V VDD = 32 V 54 54 VDD = 24 V VDD = 28 V VDD = 32 V 20 42 18 30 16 18 Efficiency c270101m-900-gr5b 28 32 20 42 18 30 16 18 Efficiency 14 24 78 Efficiency (%) Power Gain (dB) 22 26 Power Gain (dB) Gain 24 78 Efficiency (%) 26 36 40 6 14 44 c270101m-900-gr5c 24 28 Output Power (dBm) 32 36 40 6 44 Output Power (dBm) Broadband Circuit Impedance Z Source Z Load D Freq [MHz] R jX R jX 920 2.5 3.8 16.3 3.0 940 2.5 4.0 16.3 3.2 960 2.5 4.3 16.3 3.4 Z Source Z Load G S Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Max PAE [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 2.02 + j3.96 13.8 – j1.0 24.0 42.3 16.98 2.78 + j4.60 15.2 – j2.1 23.7 42.1 16.22 2.22 + j3.69 16.1 – j3.3 23.4 42.2 16.6 Freq [MHz] Zs [ 920 940 960 Data Sheet Zl 11 of 21 [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 62.3 15.7 + j8.1 26.0 40.7 11.75 70.1 60.5 17.5 + j8.4 25.7 40.3 10.72 67.8 57.7 16.5 + j8.1 25.7 40.3 10.72 65.8 Zl Rev. 04, 2015-04-01 PTFC270101M Reference Circuit, 900 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M E4 Order Code LTNPTFC270101ME4TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower C108 C109 R109 C106 VDD VGG S3 S2 R101 C101 R106 R105 S1 C110 C103 R101 R108 C107 R102 R103 RF_IN RF_OUT R104 C105 C104 R110 DUT C102 900 MHZ PTFC270101M_04 RO4350, .020 (73) pt fc 2 70 1 0 1m_ C D- 90 0 _ 01 - 23 - 15 Assembly diagram for reference circuit LTN/PTFC270101M E4, 900 MHz (not to scale) Data Sheet 12 of 21 Rev. 04, 2015-04-01 PTFC270101M Reference Circuit, 900 MHz (cont.) Components Information Component Description Manufacturer P/N C101 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102 Capacitor, 5.6 pF ATC ATC600F5R6JW250 C103, C104 C105, Capacitor, 56 pF C110 ATC ATC100A560JW250 C106, C108, C109 Capacitor, .001 µF Panasonic ECJ-1VB1H102K C107 TDK Corporation C3225X7R1H225K250AB R101, R102, Resistor, 10 ohms R103, R104, R110 Panasonic – ECG ERJ-3GEYJ100V R105, R108 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R106 Resistor, 1.1K ohms Panasonic Electronic Components ERJ-8GEYJ112V R107 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R109 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V S1 Potentiometer, 2k ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56-10 Capacitor, 2.2 µF See next page for 2600 MHz operation Data Sheet 13 of 21 Rev. 04, 2015-04-01 PTFC270101M RF Characteristics Two-carrier WCDMA Characteristics (not subject to production test) VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 18.2 — dB Drain Efficiency D — 19.7 — % Intermodulation Distortion IMD — –45 — dBc Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 20 60 50 19 50 Gain (dB) Gain 18 40 17 30 16 20 Efficiency 15 14 c270101m-2.6-gr1a 24 27 30 33 36 39 17 30 16 15 0 14 42 40 Gain 10 20 Efficiency 10 c270101m-2.6-gr1b 24 27 30 33 36 39 0 42 Output Power (dBm) Output Power (dBm) Data Sheet 18 Gain (dB) 19 60 Drain Efficiency (%) 20 Drain Efficiency (%) Typical RF Performance, 2620 – 2690 MHz (data taken in production test fixture) 14 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 2620 – 2690 MHz (cont.) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 60 19 40 17 30 Efficiency 20 15 10 14 c270101m-2.6-gr1c 24 27 30 33 36 39 55 IMD Low IMD Up ACPR Efficiency -25 -35 35 -45 25 -55 15 -65 0 c270101m-2.6-gr2a 24 42 27 30 33 36 39 Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 55 45 -35 35 -45 25 -55 15 -65 c270101m-2.6-gr2b 24 27 30 33 36 39 5 IMD Low IMD Up ACPR Efficiency -25 45 -35 35 -45 25 -55 15 -65 42 c270101m-2.6-gr2c 24 27 30 33 36 39 5 42 Output Power (dBm) Output Power (dBm) Data Sheet 55 -15 IMD & ACPR (dBc) IMD Low IMD Up ACPR Efficiency Drain Efficiency (%) -15 -25 5 42 Output Power (dBm) Output Power (dBm) IMD & ACPR (dBc) 45 Drain Efficiency (%) 16 IMD & ACPR (dBc) 18 Drain Efficiency (%) 50 Gain Gain (dB) -15 Drain Efficiency (%) 20 15 of 21 Rev. 04, 2015-04-01 PTFC270101M Typical RF Performance, 2620 – 2690 MHz (cont.) Two-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 120 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 120 mA -15 70 22 60 20 -35 -45 18 50 16 40 30 14 2620 MHz 2655 MHz 2690 MHz 12 2620 IMDL 2620 IMDU 2655 IMDL 2655 IMDU 2690 IMDL 2690 IMDU -65 10 27 30 33 36 39 c270101m-2.6-gr4 24 42 28 32 36 40 0 44 Output Power (dBm) Output Power (dBm) CW Performance CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2620 MHz at selected supply voltage IDQ = 120 mA, ƒ = 2655 MHz 70 22 70 20 60 20 60 18 50 Gain 16 40 14 30 12 20 10 32 V 28 V 24 V Efficiency 8 c270101m-2.6-gr5a 24 28 32 36 40 Power Gain (dB) 22 Efficiency (%) Power Gain (dB) 10 Efficiency 8 c270101m-2.6-gr3 24 20 50 Gain 16 30 12 10 0 8 20 32 V 28 V 24 V Efficiency 10 c270101m-2.6-gr5b 24 44 40 14 10 Output Power (dBm) Data Sheet 18 Efficiency (%) -55 Efficiency (%) Gain Gain (dB) IMD (dBc) -25 28 32 36 40 0 44 Output Power (dBm) 16 of 21 Rev. 04, 2015-04-01 PTFC270101M CW Performance Small Signal CW Performance at selected supply voltage IDQ = 120 mA, ƒ = 2690 MHz Gain & Input Return Loss VDD = 28 V, IDQ = 120 mA 70 20 60 20 Gain 16 40 14 30 12 20 10 32 V 28 V 24 V Efficiency 8 28 32 36 40 Gain 15 -5 10 -10 Input Return Loss 10 c270101m-2.6-gr5c 24 Gain (dB) 50 18 0 5 2500 0 44 Input Return Loss (dB) 22 Efficiency (%) Power Gain (dB) Typical RF Performance, 2620 – 2690 MHz (cont.) -15 2700 c270101m-2.6-gr6_v2 2550 2600 2650 Frequency (MHz) Output Power (dBm) Broadband Circuit Impedance Z Source D Z Load Freq [MHz] R jX R jX 2620 2.2 –8.4 5.0 –12.4 2655 2.2 –8.2 5.0 –12.1 2690 2.2 –8.0 5.0 –11.8 Z Source Z Load G S Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA P1dB Class AB Max Output Power Freq [MHz] Zs [] 2620 Max PAE [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 2.1 – j7.9 6.35 – j13 17.6 41.48 14.06 55.6 2655 2.2 – j8.2 5.93 – j13.2 17.4 41.46 14 54.7 2690 2.3 – j8.1 5.04 – j13.6 16.5 41.4 13.8 54.5 Data Sheet Zl 17 of 21 Zl [] Gain [dB] POUT [dBm] POUT [W] PAE [%] 4.35 – j10.8 19.2 40.5 11.22 61.68 4 – j11 19.1 40.43 11.04 60.8 3.54 – j11.5 18.71 40.21 10.5 61.23 Rev. 04, 2015-04-01 PTFC270101M Reference Circuit, 2620 – 2690 MHz DUT PTFC270101M V1 Reference Circuit No. LTN/PTFC270101M E3 Order Code LTNPTFC270101ME3TOBO1 PCB Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower C101 VGG C103 VDD R104 C102 R101 R105 S3 S2 R102 S1 C107 C105 R103 C108 C104 R106 C110 DUT RF_IN C106 RF_OUT C109 2600 MHZ PTFC270101M_03_A RO4350, .020 (73) pt fc 2 7 01 0 1 m_C D- 2 60 0 _ 01 - 23 - 1 5 Assembly diagram for reference circuit LTN/PTFC270101M E3, 2600 MHz (not to scale) Data Sheet 18 of 21 Rev. 04, 2015-04-01 PTFC270101M Reference Circuit, 2620 – 2690 MHz (cont.) Components Information Component Description Manufacturer P/N C101, C102, C103 Capacitor, 0.001 µF Panasonic ECJ-1VB1H102K C104, C108, C109 Capacitor, 12 pF ATC ATC600S120JW250 C105 Capacitor, 2.2 µF TDK Corporation C3225X7R1H225K250AB C106 Capacitor, 1 pF ATC ATC600S1R0CW250 C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C110 Capacitor, 0.3 pF ATC ATC600S0R3CW250 R101, R103 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R102 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R104 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R105 Resistor, 470 ohms Panasonic Electronic Components ERJ-8GEYJ471V R106 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V S1 Potentiometer, 2k ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56-10 Data Sheet 19 of 21 Rev. 04, 2015-04-01 PTFC270101M Package Outline Specifications Package PG-SON-10 >@3/$&(6 ; >@3/$&(6 >@ >@ >@ >@ 6 >@ ; >@3/$&(6 ,1'(; 0$5.,1* ; >@3/$&(6 7239,(: >@ ,1'(; 0$5.,1* >@ %277209,(: >@%27+6,'(6 >@ 3*621BSRBB >@ 6,'(9,(: Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.10 [0.004]. 4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm. 5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization) – source. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 20 of 21 Rev. 04, 2015-04-01 PTFC270101M V1 Revision History Revision Date Data Sheet Page Subjects (major changes in each revision) 01 2013-03-05 Advance all Proposed specification for new product development. 02 2013-06-10 Advance 2 Lower maximum junction temperature spec, add thermal resistance. 02.1 2013-06-25 Advance 2 Rev. 02.1 reverts junction temperature back to 200°C 03 2014-12-17 Production all Complete production-released product information, including typical performance graphs and reference circuits for 2100 MHz, 900 MHz and 2600 MHz operation. Maximum Operating Voltage added, maximum VGS revised. Maximum junction temperature raised to 225 °C. ESD ratings clarified. 2 2 04 2015-04-01 Production 5, 10, 17 Corrected IDQ in Small Signal CW Performance graphs We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-04-01 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 21 of 21 Rev. 04, 2015-04-01