PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Single-carrier WCDMA Drive-up • Broadband internal input and output matching 60 24 Efficiency 40 20 16 Gain 12 8 0 -20 PAR @ 0.01% CCDF -40 4 0 • Asymmetric Doherty design - Main: P1dB = 120 W Typ - Peak: P1dB = 220 W Typ Efficiency (%) Peak/Average Ratio, Gain (dB) VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 20 c192908fc_g1 25 30 35 40 45 50 PXAC192908FV Package H-37275G-6/2 55 -60 • Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P1dB = 240 W - Efficiency = 54% - Gain = 14 dB • Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power • Integrated ESD protection • Human Body Model, Class 2 (per ANSI/ESDA/ JEDEC JS-001) • Low thermal resistance • Pb-free and RoHS compliant Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 0.6 A, VGS(PEAK) = 0.55 V, POUT = 70 W avg, ƒ1 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 13 14 — dB Drain Efficiency hD 45 49 — % Adjacent Channel Power Ratio ACPR — –28 –25 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.11 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.06 — W VDS = 28 V, IDQ = 0.6 A VGS 2.5 2.65 2.75 V VDS = 28 V, IDQ = 0 A VGS 0.45 0.55 0.75 V VGS = 10 V, VDS = 0 V IGSS — — 1 µA Operating Gate Voltage (main) (peak) Gate Leakage Current Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (Doherty, TCASE = 70°C, 200 W CW, 1960 MHz, RqJC 0.32 Unit °C/W 28V, IDQ (main) = 600 mA, VGS (peak) = 0.55 V) Ordering Information Type and Version Order Code Package Description Shipping PXAC192908FV V1 R0 PXAC192908FVV1R0XTMA1 H-37275G-6/2, earless flange Tape & Reel, 50 pcs PXAC192908FV V1 R250 PXAC192908FVV1R250XTMA1 H-37275G-6/2, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Typical Performance (data taken in a production Doherty test fixture) Single-carrier WCDMA Broadband Performance Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm, 3GPP WCDMA signal, PAR = 10 dB 55 25 14 Gain ACP Up (dBc) 35 16 15 12 10 1750 1950 -20 -15 -25 -20 -30 -25 ACP Up -30 -40 1750 5 2150 2050 -10 Return Loss -35 c192908fc_g2 1850 -5 -15 45 Efficiency Efficiency (%) Gain (dB) 18 -10 Return Loss (dB) 20 VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm, 3GPP WCDMA signal, PAR = 10 dB -35 2150 c192908fc_g3 1850 1950 2050 Frequency (MHz) Frequency (MHz) Pulsed CW Performance Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 600mA VDD = 28 V, IDQ = 600 mA, 3GPP WCDMA signal, PAR = 10 dB, 10 MHz carrier spacing, BW = 3.84 MHz 1930 MHz 20 -20 60 1960 MHz -40 1930 ACPL 1930 ACPU 1960 ACPL 1960 ACPU 1990 ACPL 1990 ACPU -50 -60 30 35 40 45 50 Gain 5 55 Average Output Power (dBm) Data Sheet 40 Efficiency 10 c192908fc_g4 25 15 20 c192908fc_g5 28 32 36 40 44 48 52 56 60 Efficiency (%) -30 Gain (dB) ACP Up & Low (dBc) 1990 MHz 0 Output Power (dBm) 3 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Typical Performance (cont.) Pulsed CW Performance at various VDD Small Signal CW Performance Gain & Input Return Loss IDQ = 600 mA, ƒ = 1990 MHz VDD = 28 V, IDQ = 750 mA 20 60 20 -2 Gain 10 20 VDD = 24 V VDD = 28 V VDD = 32 V 5 36 44 52 60 -10 -14 Gain 12 1750 0 -6 16 14 c192908fc_g6 28 IRL 18 1800 1850 1900 1950 Input Return Loss (dB) 40 Gain (dB) 15 Efficiency (%) Gain (dB) Efficiency -18 2050 c192908fc_g7 2000 Frequency (MHz) Output Power (dBm) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD = 28 V, IDQ = 600 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] PAE [%] 1930 8.0 – j11.0 2.1 – j4.7 18.0 51.10 128.8 50.4 3.6 – j2.7 20.2 50.12 102.8 62.5 1960 11.9 – j11.9 2.1 – j4.7 18.2 51.10 128.8 51.0 3.6 – j2.9 20.2 50.08 101.9 61.6 1990 18.0 – j10.4 2.1 – j4.8 18.3 50.91 123.3 49.7 3.63 – j2.6 20.5 49.78 95.1 61.3 POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD =28 V, IDQ = 90 mA P1dB Max Output Power Zs [W] Freq [MHz] Zl [ W] Gain [dB] POUT [dBm] Max PAE POUT [W] PAE [%] Zl [ W] Gain [dB] POUT [dBm] 1930 1.7 – j5.3 5.3 – j3.8 18.0 54.24 265.5 55.6 2.9 – j2.0 19.6 53.04 201.4 66.3 1960 2.0 – j5.8 5.3 – j3.7 18.4 54.16 260.6 55.7 2.9 – j2.2 20.1 52.90 195.0 66.0 1990 3.2 – j6.9 6.3 – j2.8 18.7 54.08 255.9 54.7 2.9 – j2.2 20.3 52.88 194.1 65.0 Data Sheet 4 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Reference Circuit , 1930 – 1990 MHz PXAC192908FV_IN_04_D C803 C802 PXAC192908FV_OUT_04_D R801 C801 C205 C206 C207 C208 + R803 S3 C204 S1 S2 C203 R103 C102 C101 C217 C202 C229 C230 C201 R102 R101 C218 C219 C220 C221 C103 C222 C104 C105 RF IN U1 C227 C107 C106 C223 RF OUT C225 C110 R107 C224 C226 R104 C109 C108 C209 R105 C210 C231 C211 S4 C232 C212 C228 C213 C214 C215 C216 R106 RO4350_0 .508 (61) RO4350_0 .508 (194) p x a c 1 9 2 9 0 8 f v _ C D _ 1 2 - 0 9 - 2 0 1 4 Reference circuit assembly diagram (not to scale) Data Sheet 5 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC192908FV V1 Test Fixture Part No. LTA/PXAC192908FV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C108, C105 Capacitor, 18 pF ATC ATC600F180JT250X C102, C109 Capacitor, 10 μF Murata LLL31BC70G106MA01L C103 Capacitor, 1 pF ATC ATC600F1R0CT250X C104 Capacitor, 1.2 pF ATC ATC600A1R2CT250X C106 Capacitor, 0.5 pF ATC ATC600F0R5CT250X C107 Capacitor, 1.1 pF ATC ATC600F1R1CT250X C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R104 Resistor, 5600 Ω Panasonic Electronic Components ERJ-8RQJ5R6V R102, R105 Resistor, 1000 Ω Panasonic Electronic Components ERJ-8GEYJ102V R103, R106 Resistor, 5.1 Ω Panasonic Electronic Components ERJ-8GEYJ5R1V R107 Resistor, 50 Ω Richardson C16A50Z4 R801 Resistor, 1300 Ω Panasonic Electronic Components ERJ-3GEYJ132V R802 Resistor, 1200 Ω Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 5100 Ω Panasonic Electronic Components ERJ-8GEYJ512V S1 Voltage Regulator Texas Instruments LM78L05ACM S2 Transistor Infineon Technologies BCP56 S3, S4 Potentiometer, 2k Ω Bourns Inc. 3224W-1-202E U1 Hybrid coupler Anaren X3C19P1-04S C201, C202, C203, C204, C205, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C217, C224, C225, C227, C228 Capacitor, 18 pF ATC ATC600F180JT250X C218 Capacitor, 0.5 pF ATC ATC600F0R5CT250X Output C219 Capacitor, 1.8 pF ATC ATC600F1R8CT250X C220 Capacitor, 0.8 pF ATC ATC600F0R8CT250X C221 Capacitor, 0.4 pF ATC ATC600F0R4CT250X C222, C226 Capacitor, 0.2 pF ATC ATC600F0R2CT250X C223 Capacitor, 1.0 pF ATC ATC600F1R0CT250X C229, C230, C231, 232 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP Data Sheet 6 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Pinout Diagram (top view) Main Peak V1 V2 D1 D2 Pin D1 D2 G1 G2 S S G1 G2 Description Drain device 1 (Main) Drain device 2 (Peak) Gate device 1 (Main) Gate device 2 (Peak) Source (flange) H-34275G-6-2_pd_10-10-2012 Lead connections for PXAC192908FV Data Sheet 7 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV Package Outline Specifications Package H-37275G-6/2 30.61 [1.205] (13.72 [.540]) 2X D 45° x .64 [.025] 2X 2.22 [.087] 2X (1.27 [.050]) 2X 2.29 [.090] 2X 30° CL 6X 4.04±0.51 [.159±.020] V1 10.16 [.400] D1 D2 V2 4X R0.51 +.38 -.13 [R.020 +.015 -.005 ] (18.24 [.718]) 9.14 [.360] CL G1 G2 CL CL 2X 26.16 [1.030] 4X 12.45 [.490] 4.58 +0.25 -0.13 [.180 +.010 -.005 ] SPH 2.134 [.084] 31.24±0.28 [1.230±.011] CL (1.63 [0.064]) H-37275G-6/2_sl_po_03_07-25-2013 32.26 [1.270] S DiagramNotes—unlessotherwisespecified: 1. InterpretdimensionsandtolerancesperASMEY14.5M-1994. 2. Primarydimensionsaremm.Alternatedimensionsareinches. 3. Alltolerances±0.127[.005]unlessspecifiedotherwise. 4. Pins:D1,D2–drains;G1,G2–gates;S–source;V1,V2–VDD. 5. Leadthickness:0.13+0.051/–0.025mm[0.005+0.002/–0.001inch]. 6. Goldplatingthickness:1.14±0.38micron[45±15microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 02.3, 2016-06-17 PXAC192908FV V1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-06-24 Advance All Data Sheet reflects advance specification for product development 01.1 2014-08-27 Advance 2 Updated main and peak side of pinout diagram, added thermal resistance 01.2 2014-09-24 Advance 2 Updated thermal resistance 02 2014-12-08 Production All Data Sheet reflects released product specification 02.1 2015-01-13 Production 4 Revised IDQ on main side of Load Pull Performance 02.2 2015-07-14 Production 1 Updated P1dB main & peak in Features 02.3 2016-06-17 Production 2 Updated ordering information to include R0 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-06-17 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02.3, 2016-06-17