PXAC192908FV V1 Data Sheet (588 KB, EN)

PXAC192908FV
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 1930 – 1995 MHz
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1995 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
Single-carrier WCDMA Drive-up
• Broadband internal input and output matching
60
24
Efficiency
40
20
16
Gain
12
8
0
-20
PAR @ 0.01% CCDF
-40
4
0
• Asymmetric Doherty design
- Main: P1dB = 120 W Typ
- Peak: P1dB = 220 W Typ
Efficiency (%)
Peak/Average Ratio, Gain (dB)
VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
20
c192908fc_g1
25
30
35
40
45
50
PXAC192908FV
Package H-37275G-6/2
55
-60
• Typical Pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P1dB = 240 W
- Efficiency = 54%
- Gain = 14 dB
• Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
• Integrated ESD protection
• Human Body Model, Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 0.6 A, VGS(PEAK) = 0.55 V, POUT = 70 W avg, ƒ1 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
13
14
—
dB
Drain Efficiency hD
45
49
—
%
Adjacent Channel Power Ratio
ACPR
—
–28
–25
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10
µA
On-State Resistance (main)
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.11
—
W
(peak)
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.06
—
W
VDS = 28 V, IDQ = 0.6 A
VGS
2.5
2.65
2.75
V
VDS = 28 V, IDQ = 0 A
VGS
0.45
0.55
0.75
V
VGS = 10 V, VDS = 0 V
IGSS
—
—
1
µA
Operating Gate Voltage (main)
(peak)
Gate Leakage Current
Maximum Ratings
Parameter
Symbol
Value
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage
VDD
0 to +32
V
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (Doherty, TCASE = 70°C, 200 W CW, 1960 MHz,
RqJC
0.32
Unit
°C/W
28V, IDQ (main) = 600 mA, VGS (peak) = 0.55 V)
Ordering Information
Type and Version
Order Code
Package Description Shipping
PXAC192908FV V1 R0
PXAC192908FVV1R0XTMA1
H-37275G-6/2, earless flange Tape & Reel, 50 pcs
PXAC192908FV V1 R250
PXAC192908FVV1R250XTMA1
H-37275G-6/2, earless flange Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
Typical Performance (data taken in a production Doherty test fixture)
Single-carrier WCDMA
Broadband Performance
Single-carrier WCDMA
Broadband Performance
VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
55
25
14
Gain
ACP Up (dBc)
35
16
15
12
10
1750
1950
-20
-15
-25
-20
-30
-25
ACP Up
-30
-40
1750
5
2150
2050
-10
Return Loss
-35
c192908fc_g2
1850
-5
-15
45
Efficiency
Efficiency (%)
Gain (dB)
18
-10
Return Loss (dB)
20
VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
-35
2150
c192908fc_g3
1850
1950
2050
Frequency (MHz)
Frequency (MHz)
Pulsed CW Performance
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 600mA
VDD = 28 V, IDQ = 600 mA,
3GPP WCDMA signal, PAR = 10 dB,
10 MHz carrier spacing, BW = 3.84 MHz
1930 MHz
20
-20
60
1960 MHz
-40
1930 ACPL
1930 ACPU
1960 ACPL
1960 ACPU
1990 ACPL
1990 ACPU
-50
-60
30
35
40
45
50
Gain
5
55
Average Output Power (dBm)
Data Sheet
40
Efficiency
10
c192908fc_g4
25
15
20
c192908fc_g5
28
32
36
40
44
48
52
56
60
Efficiency (%)
-30
Gain (dB)
ACP Up & Low (dBc)
1990 MHz
0
Output Power (dBm)
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Rev. 02.3, 2016-06-17
PXAC192908FV
Typical Performance (cont.)
Pulsed CW Performance
at various VDD
Small Signal CW Performance
Gain & Input Return Loss
IDQ = 600 mA, ƒ = 1990 MHz
VDD = 28 V, IDQ = 750 mA
20
60
20
-2
Gain
10
20
VDD = 24 V
VDD = 28 V
VDD = 32 V
5
36
44
52
60
-10
-14
Gain
12
1750
0
-6
16
14
c192908fc_g6
28
IRL
18
1800
1850
1900
1950
Input Return Loss (dB)
40
Gain (dB)
15
Efficiency (%)
Gain (dB)
Efficiency
-18
2050
c192908fc_g7
2000
Frequency (MHz)
Output Power (dBm)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD = 28 V, IDQ = 600 mA
P1dB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
PAE
[%]
1930
8.0 – j11.0
2.1 – j4.7
18.0
51.10
128.8
50.4
3.6 – j2.7
20.2
50.12
102.8
62.5
1960
11.9 – j11.9
2.1 – j4.7
18.2
51.10
128.8
51.0
3.6 – j2.9
20.2
50.08
101.9
61.6
1990
18.0 – j10.4
2.1 – j4.8
18.3
50.91
123.3
49.7
3.63 – j2.6
20.5
49.78
95.1
61.3
POUT
[W]
PAE
[%]
Peak Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD =28 V, IDQ = 90 mA
P1dB
Max Output Power
Zs
[W]
Freq
[MHz]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
Max PAE
POUT
[W]
PAE
[%]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
1930
1.7 – j5.3
5.3 – j3.8
18.0
54.24
265.5
55.6
2.9 – j2.0
19.6
53.04
201.4
66.3
1960
2.0 – j5.8
5.3 – j3.7
18.4
54.16
260.6
55.7
2.9 – j2.2
20.1
52.90
195.0
66.0
1990
3.2 – j6.9
6.3 – j2.8
18.7
54.08
255.9
54.7
2.9 – j2.2
20.3
52.88
194.1
65.0
Data Sheet
4 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
Reference Circuit , 1930 – 1990 MHz
PXAC192908FV_IN_04_D
C803 C802
PXAC192908FV_OUT_04_D
R801
C801
C205 C206 C207 C208
+
R803
S3
C204
S1
S2
C203
R103
C102 C101
C217
C202
C229
C230
C201
R102
R101
C218
C219
C220 C221
C103
C222
C104
C105
RF
IN
U1
C227
C107 C106
C223
RF
OUT
C225
C110
R107
C224
C226
R104
C109 C108
C209
R105
C210
C231
C211
S4
C232
C212
C228
C213 C214 C215 C216
R106
RO4350_0 .508
(61)
RO4350_0 .508
(194)
p x a c 1 9 2 9 0 8 f v _ C D _ 1 2 - 0 9 - 2 0 1 4
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXAC192908FV V1
Test Fixture Part No.
LTA/PXAC192908FV V1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Suggested Manufacturer
P/N
Input
C101, C108, C105
Capacitor, 18 pF
ATC
ATC600F180JT250X
C102, C109
Capacitor, 10 μF
Murata
LLL31BC70G106MA01L
C103
Capacitor, 1 pF
ATC
ATC600F1R0CT250X
C104
Capacitor, 1.2 pF
ATC
ATC600A1R2CT250X
C106
Capacitor, 0.5 pF
ATC
ATC600F0R5CT250X
C107
Capacitor, 1.1 pF
ATC
ATC600F1R1CT250X
C801, C802, C803
Capacitor, 1000 pF
Panasonic Electronic Components
ECJ-1VB1H102K
R101, R104
Resistor, 5600 Ω
Panasonic Electronic Components
ERJ-8RQJ5R6V
R102, R105
Resistor, 1000 Ω
Panasonic Electronic Components
ERJ-8GEYJ102V
R103, R106
Resistor, 5.1 Ω
Panasonic Electronic Components
ERJ-8GEYJ5R1V
R107
Resistor, 50 Ω
Richardson
C16A50Z4
R801
Resistor, 1300 Ω
Panasonic Electronic Components
ERJ-3GEYJ132V
R802
Resistor, 1200 Ω
Panasonic Electronic Components
ERJ-3GEYJ122V
R803
Resistor, 5100 Ω
Panasonic Electronic Components
ERJ-8GEYJ512V
S1
Voltage Regulator
Texas Instruments
LM78L05ACM
S2
Transistor
Infineon Technologies
BCP56
S3, S4
Potentiometer, 2k Ω
Bourns Inc.
3224W-1-202E
U1
Hybrid coupler
Anaren
X3C19P1-04S
C201, C202, C203, C204,
C205, C206, C207, C208,
C209, C210, C211, C212,
C213, C214, C215, C216
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C217, C224, C225, C227,
C228
Capacitor, 18 pF
ATC
ATC600F180JT250X
C218
Capacitor, 0.5 pF
ATC
ATC600F0R5CT250X
Output
C219
Capacitor, 1.8 pF
ATC
ATC600F1R8CT250X
C220
Capacitor, 0.8 pF
ATC
ATC600F0R8CT250X
C221
Capacitor, 0.4 pF
ATC
ATC600F0R4CT250X
C222, C226
Capacitor, 0.2 pF
ATC
ATC600F0R2CT250X
C223
Capacitor, 1.0 pF
ATC
ATC600F1R0CT250X
C229, C230, C231, 232
Capacitor, 220 µF
Panasonic Electronic Components
EEE-FP1V221AP
Data Sheet
6 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
Pinout Diagram (top view)
Main
Peak
V1
V2
D1
D2
Pin
D1 D2 G1 G2 S
S
G1
G2
Description
Drain device 1 (Main)
Drain device 2 (Peak)
Gate device 1 (Main)
Gate device 2 (Peak)
Source (flange)
H-34275G-6-2_pd_10-10-2012
Lead connections for PXAC192908FV
Data Sheet
7 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV
Package Outline Specifications
Package H-37275G-6/2
30.61
[1.205]
(13.72
[.540])
2X D 45° x .64
[.025]
2X 2.22
[.087]
2X (1.27
[.050])
2X 2.29
[.090]
2X 30°
CL
6X 4.04±0.51
[.159±.020]
V1
10.16
[.400]
D1
D2
V2
4X R0.51 +.38
-.13
[R.020 +.015
-.005 ]
(18.24
[.718])
9.14
[.360]
CL
G1
G2
CL
CL
2X 26.16
[1.030]
4X 12.45
[.490]
4.58 +0.25
-0.13
[.180 +.010
-.005 ]
SPH 2.134
[.084]
31.24±0.28
[1.230±.011]
CL
(1.63
[0.064])
H-37275G-6/2_sl_po_03_07-25-2013
32.26
[1.270]
S
DiagramNotes—unlessotherwisespecified:
1. InterpretdimensionsandtolerancesperASMEY14.5M-1994.
2. Primarydimensionsaremm.Alternatedimensionsareinches.
3. Alltolerances±0.127[.005]unlessspecifiedotherwise.
4. Pins:D1,D2–drains;G1,G2–gates;S–source;V1,V2–VDD.
5. Leadthickness:0.13+0.051/–0.025mm[0.005+0.002/–0.001inch].
6. Goldplatingthickness:1.14±0.38micron[45±15microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 02.3, 2016-06-17
PXAC192908FV V1
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2014-06-24
Advance
All
Data Sheet reflects advance specification for product development
01.1
2014-08-27
Advance
2
Updated main and peak side of pinout diagram, added thermal resistance
01.2
2014-09-24
Advance
2
Updated thermal resistance
02
2014-12-08
Production
All
Data Sheet reflects released product specification
02.1
2015-01-13
Production
4
Revised IDQ on main side of Load Pull Performance
02.2
2015-07-14
Production
1
Updated P1dB main & peak in Features
02.3
2016-06-17
Production
2
Updated ordering information to include R0
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Edition 2016-06-17
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 02.3, 2016-06-17