PTVA123501FCV1XWSA1

PTVA123501EC
PTVA123501FC
Thermally-Enhanced High Power RF LDMOS FETs
350 W, 50 V, 1200 – 1400 MHz
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed
for use in power amplifier applications in the 1200 MHz to 1400 MHz
frequency band. Features include high gain and thermally-enhanced
package with slotted and earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTVA123501EC
Package H-36248-2
PTVA123501FC
Package H-37248-2
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 μs pulse width, 12% duty cycle
POUT (dBm)
55
Output Power
50
80
Features
70
•
Broadband internal input and output matching
•
High gain and efficiency
•
Integrated ESD protection
•
Low thermal resistance
•
Excellent ruggedness
•
Pb-free and RoHS compliant
•
Capable of withstanding a 10:1 load
mismatch (all phase angles) at 55.5 dBm
under pulsed conditions: 300 µs pulse width,
12% duty cycle, VDD = 50 V
60
45
50
40
40
1200 MHz
1300 MHz
35
30
1400 MHz
Efficiency
30
a123501ec_g1-1
30
32
34
Drain Efficiency (%)
60
36
38
40
20
42
PIN (dBm)
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
VDD = 50 V, IDQ = 0.15 A, POUT = 350 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
16.5
17
—
dB
Drain Efficiency
D
54
55
—
%
Return Loss
IRL
—
–12
–9
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
VDD = 50 V, IDQ = 150 mA, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test
P1dB
Mode of
Operation
ƒ
(MHz)
IRL
(dB)
Pulsed RF
1200
Pulsed RF
Pulsed RF
P3dB
Max
Pdroop (pulse)
dB @ 350 W
tr (ns) @
350 W
tf (ns) @
350 W
Gain
(dB)
Eff
(%)
POUT
(W)
Gain
(dB)
Eff
(%)
POUT
(W)
–14
16.2
59
375
14.2
59
415
0.10
4
5<
1300
–14
16.0
59
390
14.0
59
435
0.15
4
5<
1400
–12
15.8
56
375
13.8
57
415
0.15
4
5<
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
VDD = 50 V, IDQ = 150 mA, 30 ms pulse width, 30% duty cycle, class AB test
Mode of
Operation
ƒ
(MHz)
P3dB
P1dB
Gain
(dB)
Eff
(%)
POUT
(W)
Gain
(dB)
Eff
(%)
POUT
(W)
Pdroop (pulse) dB @ 300 W
Pulsed RF
1200
16
47
316
14
48
350
0.23
Pulsed RF
1300
16
47
324
14
48
355
0.25
Pulsed RF
1400
15.5
45
315
13.5
47
355
0.29
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
105
—
—
V
Drain Leakage Current
VDS = 50 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 105 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.1
—

Operating Gate Voltage
VDS = 50 V, IDQ = 150 mA
VGS
3
3.35
4
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
105
V
Gate-Source Voltage
VGS
–6 to +12
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (TCASE = 70°C, 300 W CW)
RJC
0.34
°C/W
Data Sheet
2 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Ordering Information
Type and Version
Order Code
Package Description
Shipping
PTVA123501EC V2
PTVA123501ECV2XWSA1
H-36248-2, bolt-down
Tray
PTVA123501EC V2 R250
PTVA123501ECV2R250XTMA1
H-36248-2, bolt-down
Tape & Reel, 250 pcs
PTVA123501FC V1
PTVA123501FCV1XWSA1
H-37248-2, earless
Tray
PTVA123501FC V1 R250
PTVA123501FCV1R250XTMA1
H-37248-2, earless
Tape & Reel, 250 pcs
See next page for Typical RF Performance
Data Sheet
3 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (data taken in production test fixture)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 μs pulse width, 12% duty cycle
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 μs pulse width, 12% duty cycle
Output Power
18
70
17
50
60
45
50
40
40
1200 MHz
1300 MHz
35
34
14
1200 MHz
30
13
20
12
1300 MHz
36
38
40
42
a123501ec_g1-2
30
32
34
38
40
42
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
300 μs pulse width, 12% duty cycle
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
300 μs pulse width, 12% duty cycle
0.2
70
18
16
60
Efficiency
14
1150
55
Power Droop (dB)
65
Drain Efficiency (%)
17
15
1250
1300
1350
1400
-14
0.1
-16
IRL
0.05
-18
-20
1500
a123501ec_g1-4
1200
1300
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
0.15
0
1100
50
1450
a123501ec_g1-3
1200
-12
Power Droop
Gain
Gain (dB)
36
IRL (dB)
32
15
1400 MHz
a123501ec_g1-1
30
16
1400 MHz
Efficiency
30
Gain
Gain (dB)
POUT (dBm)
55
80
Drain Efficiency (%)
60
4 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
IDQ = 150 mA,VDD = 50 V, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
Output Power
18
70
17
50
60
45
50
40
40
1200 MHz
1300 MHz
Efficiency
30
a123501ec_g2-1
31
33
35
37
39
41
Gain
15
14
1200 MHz
1300 MHz
13
1400 MHz
1400 MHz
30
16
12
20
a123501ec_g2-2
31
43
33
35
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
2 ms pulse width, 10% duty cycle
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
2 ms pulse width, 10% duty cycle
17
65
Gain
16
60
Efficiency
15
14
1150
55
Power Droop (dB)
70
Drain Efficiency (%)
18
Gain (dB)
37
1250
1300
1350
1400
0.25
-12
Power Droop
0.2
0.15
-14
-16
IRL
0.05
1100
50
1450
-18
-20
1500
a123501ec_g2-4
1200
1300
1400
Frequency (MHz)
Frequency (MHz)
Data Sheet
-10
0.1
a123501ec_g2-3
1200
0.3
IRL (dB)
35
Gain (dB)
POUT (dBm)
55
80
Drain Efficiency (%)
60
5 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
IDQ = 150 mA,VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 20% duty cycle
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 20% duty cycle
Output Power
18
70
17
50
60
45
50
40
40
1200 MHz
35
1300 MHz
Efficiency
14
30
13
20
12
1200 MHz
1300 MHz
37
39
41
a123501ec_g3-2
31
43
33
35
PIN (dBm)
39
41
43
PIN (dBm)
Pulsed RF Performance
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 20% duty cycle
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 20% duty cycle
70
17
65
Gain
16
60
15
55
-6
0.35
Power Droop (dB)
18
Drain Efficiency (%)
Gain (dB)
37
-8
0.3
Power Droop
0.25
-10
0.2
-12
IRL (dB)
35
15
1400 MHz
a123501ec_g3-1
33
Gain
1400 MHz
30
31
16
Gain (dB)
POUT (dBm)
55
80
Drain Efficiency (%)
60
IRL
-14
0.15
Efficiency
14
1150
50
1450
0.1
1100
a123501ec_g3-3
1200
1250
1300
1350
1400
Frequency (MHz)
Data Sheet
-16
1500
a123501ec_g3-4
1200
1300
1400
Frequency (MHz)
6 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
16 ms pulse width, 50% duty cycle
Output Power
18
70
17
50
60
45
50
40
40
1200 MHz
35
30
1300 MHz
Efficiency
1400 MHz
30
35
37
39
41
Gain
15
14
1200 MHz
1300 MHz
1400 MHz
12
a123501ec_g4-2
31
43
33
35
39
41
43
PIN (dBm)
PIN (dBm)
Pulsed RF Performance
Pulsed RF Performance
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 50% duty cycle
IDQ = 150 mA, VDD = 50 V, POUT = 350 W,
16 ms pulse width, 50% duty cycle
70
65
Gain
14
60
13
55
Efficiency
12
1100
Power Droop (dB)
15
0.4
Drain Efficiency (%)
16
Gain (dB)
37
50
1500
1300
1400
Frequency (MHz)
Data Sheet
0.3
-4
Power Droop
0.2
-6
0.1
-8
0
1100
a123501ec_g4-3
1200
-2
IRL
IRL (dB)
33
16
13
20
a123501ec_g4-1
31
Gain (dB)
POUT (dBm)
55
80
Drain Efficiency (%)
60
-10
1500
a123501ec_g4-4
1200
1300
1400
Frequency (MHz)
7 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Broadband Circuit Impedance
Z Source 
Z Load 
D
Freq
[MHz]
R
jX
R
jX
1200
1.25
–1.99
1.96
–2.23
1300
1.54
–1.52
1.59
–2.03
1400
1.66
–1.58
1.26
–1.75
Z Source
Z Load
G
S
Load Pull Performance
Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA
Freq
[MHz]
Zl
[]
PIN
[dBm]
POUT
[dBm]
POUT
[W]
PG
[dB]
PAE Eff
[%]
ZOUT
[]
1200
1.91 – j2.04
41.40
56.40
436.52
15
53.80
1.30 – j2.03
1300
2.72 – j3.13
42.24
56.54
450.82
14.30
54.48
1.25 – j1.94
1400
4.83 – j1.46
41.66
56.31
427.56
14.65
53.27
1.03 – j1.94
Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA
Freq
[MHz]
Zl
[]
PIN
[dBm]
POUT
[dBm]
POUT
[W]
PG
[dB]
PAE Eff
[%]
ZOUT
[]
1200
1.91 – j2.04
38.10
54.72
296.48
16.62
57.89
3.03 – j3.11
1300
2.72 – j3.13
38.84
54.83
304.09
15.99
62.54
3.22 – j1.63
1400
4.83 – j1.46
37.21
53.42
219.79
16.21
57.25
2.30 – j0.09
Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA
Freq
[MHz]
Zl
[]
PIN
[dBm]
POUT
[dBm]
POUT
[W]
PG
[dB]
PAE Eff
[%]
ZOUT
[]
1200
1.91 – j2.04
39.60
55.80
380.19
16.20
60.71
2.22 – j2.43
1300
2.72 – j3.13
39.44
55.23
333.43
15.79
63.71
2.81 – j1.90
1400
4.83 – j1.46
39.39
55.19
330.37
15.80
62.26
2.40 – j1.45
Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA
Freq
[MHz]
Zl
[]
PIN
[dBm]
POUT
[dBm]
POUT
[W]
PG
[dB]
PAE Eff
[%]
ZOUT
[]
1200
1.91 – j2.04
39.18
55.58
361.41
16.4
60.5
2.41 – j2.50
1300
2.72 – j3.13
39.50
55.30
338.84
15.8
62.6
2.73 – j1.51
1400
4.83 – j1.46
40
55.60
363.08
15.6
60.7
1.86 – j1.37
Data Sheet
8 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Reference Circuit
C201
C803 C801 R803
C802
R804
RO6006, .025 (62)
C206
C208
+
S3
S2
R802
S1
R801
VDD
R202
C101
R101
C104
R102
C207
C103
C211
R103
C203
C202
C102
RF_IN
RF_OUT
C205
C105
C106
C204
VDD
R201
C209
C210
PTVA123501EC_IN_02 RO6006, .025 (62)
PTVA123501EC_OUT_02
p t v a 1 2 3 5 0 1 e c _ C D _ 0 7 - 1 6 - 2 0 1 3
Reference circuit assembly diagram (not to scale)*
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet
9 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PTVA123501EC or PTVA123501FC
Test Fixture Part No.
LTN/PTVA123501EC V2 or LTN/PTVA123501FC V1
PCB
Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, r = 6.15
Components Information
Component
Description
Suggested Manufacturer
P/N
C101
Capacitor, 1 µF
TDK Corporation
C4532X7R2A105M230KA
C102, C103
Capacitor, 39 pF
ATC
ATC100B390KW500XB
C104
Capacitor, 10 µF
TDK Corporation
C5750X5R1H106K230KA
C105
Capacitor, 3 pF
ATC
ATC100A3R0CW150XB
C106
Capacitor, 0.5 pF
ATC
ATC100A0R5CW150XB
Input
C801, C802, C803
Capacitor, 1000 pF
Panasonic Electronic Components
ECJ-1VB1H102K
R101
Resistor, 1000 
Panasonic Electronic Components
ERJ-8GEYJ102V
R102
Resistor, 5600 
Panasonic Electronic Components
ERJ-8GEYJ562V
R103, R804
Resistor, 10 
Panasonic Electronic Components
ERJ-8GEYJ100V
R801
Resistor, 2000 
Panasonic Electronic Components
ERJ-8GEYJ202V
R802
Resistor, 1200 
Panasonic Electronic Components
ERJ-3GEYJ122V
R803
Resistor, 1300 
Panasonic Electronic Components
ERJ-3GEYJ132V
S1
Transistor
Infineon Technologies
BCP56
S2
Voltage Regulator
Texas Instruments
LM7805
S3
Potentiometer, 2k 
Bourns Inc.
3224W-1-202E
C201
Capacitor, 6800 µF
Panasonic Electronic Components
ECO-S2AP682EA
C202
Capacitor, 100 µF
Cornell Dubilier Electronics (CDE)
SK101M100ST
C203
Capacitor, 22 µF
Cornell Dubilier Electronics (CDE)
SEK220M100ST
C204, C205, C207
Capacitor, 39 pF
ATC
ATC100B390KW500XB
C206, C210
Capacitor, 1 µF
TDK Corporation
C4532X7R2A105M230KA
C208, C209
Capacitor, 10 µF
TDK Corporation
C5750X5R1H106K230KA
C211
Capacitor, 10 µF
Panasonic Electronic Components
EEV-HD1H100P
R201, R202
Resistor, 5600 
Panasonic Electronic Components
ERJ-8GEYJ562V
Output
Data Sheet
10 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
Package Outline Specifications
Package H-36248-2
ƒ;
>ƒ;@
&/
“
>“@
'
6
)/$1*(
>@
/,' ²
“
>
²@
>“@
&/
;5
>5@
*
;5
>5@
;
>@
>@
“
>“@
>@
63+
>@
&
/
“
>“@
+BSRBB
>@
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Data Sheet
11 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC
PTVA123501FC
Package Outline Specifications (cont.)
Package H-37248-2
ƒ;
>ƒ;@
&/
“
>“@
> 5
@
;5
'
> @
/,'
)/$1*(
>@
“
>“@
&/
*
;
>@
63+
>@
“
>“@
>@
+BSRB
“
>“@
6
&/
>@
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 04.1, 2014-06-26
PTVA123501EC V2/ PTVA123501FC V1
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2012-06-05
Preliminary
All
Data Sheet reflects preliminary specification
02
2013-03-06
Production
All
Data Sheet reflects released product specification
03
2013-07-11
Production
All
1
9
12
Updated to include FC version
Revised Pulsed RF performance table
Minor cosmetic changes only
Added package outline
04
2014-04-29
Production
All
1
Revised product from V1 to V2
Revised target RF Charateristics table
04.1
2014-06-26
Production
All
3
Corrected FC version to V1 throughout
Corrected package to H-36248-2 and H-37248-2 in ordering table
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2014-06-26
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
13 of 13
Rev. 04.1, 2014-06-26