PTFC270051M V2 R1K Data Sheet

PTFC270051M
High Power RF LDMOS Field Effect Transistor
5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
Gain
50
20
40
19
30
18
•
Unmatched
•
Typical CW performance, 940 MHz, 28 V
- Output power (P1dB) = 6.5 W
- Gain = 23 dB
- Efficiency = 62%
•
Typical CW performance, 2170 MHz, 28 V
- Output power (P1dB) = 7.3 W
- Gain = 20.3 dB
- Efficiency = 60%
•
Typical CW performance, 2655 MHz, 28 V
- Output power (P1dB) = 7.3 W
- Gain = 19.9 dB
- Efficiency = 59.5%
•
Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
output power
•
Integrated ESD protection: Human Body Model
Class 1A (per JESD22-A114)
•
Pb-free and RoHS compliant
60
Efficiency
20
2110 MHz
2140 MHz
2170 MHz
17
16
10
c270051m-gr1.3
22
24
26
28
30
32
34
36
Drain Efficiency (%)
Gain (dB)
21
PTFC270051M
Package PG-SON-10
38
0
40
Output Power (dBm)
RF Characteristics, 2170 MHz
CW Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 5 W, ƒ1 = 2110 MHz, ƒ2 = 2170 MHz
Characteristic
Gain
Symbol
Min
Typ
Max
Unit
Gps
18.5
19.5
—
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 01, 2015-03-20
PTFC270051M
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 60 V, VGS = 0 V
IDSS
—
—
1
µA
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
2
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 65 mA
VGS
2.2
2.7
3.2
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage
VDD
0 to +32
V
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (TCASE 70°C, 5.5 W CW)
RθJC
3.84
°C/W
Junction Temperature
Moisture Sensitivity Level
Level
Test Standard
3
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type
Order Code
Package and Description
Shipping
PTFC270051M V2 R1K
PTFC270051MV2R1KXUMA1
PG-SON-10, molded plastic, SMD
Tape & Reel, 1000 pcs
Data Sheet
2 of 14
Rev. 01, 2015-03-20
PTFC270051M
RF Characteristics, 2170 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2157.5 MHz, ƒ2 = 2167.5 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
21
—
dB
Drain Efficiency
ηD
—
21.5
—
%
Intermodulation Distortion
IMD
—
–35.5
—
dBc
Typical Performance, 2170 MHz (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2110 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA, ƒ = 2140 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-25
-5
55
-15
45
-35
35
-45
25
-55
15
-65
c270051m-2100-gr4
22
24
26
28
30
32
34
36
38
-25
55
45
-35
35
-45
25
-55
15
-65
5
c270051m-2100-gr5
22
40
24
26
28
30
32
34
36
38
5
40
Output Power (dBm)
Output Power (dBm)
Data Sheet
65
IMD Low
IMD Up
ACPR
Efficiency
Drain Efficiency (%)
-15
65
IMD (dBc), ACPR (dBc)
IMD Low
IMD Up
ACPR
Efficiency
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
-5
3 of 14
Rev. 01, 2015-03-20
PTFC270051M
Typical Performance, 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
65
IMD Low
IMD Up
ACPR
Efficiency
45
-35
35
-45
25
-55
15
-65
24
26
28
30
32
34
36
38
-35
-45
5
c270051m-2100-gr6
22
-25
2110 IMD Low
2140 IMD Low
2170 IMD Low
-55
40
c270051m-2100-gr7
22
24
26
Output Power (dBm)
66
18
30
Efficiency
2110 MHz
2140 MHz
2170 MHz
14
18
c270051m-2100-gr8
28
30
32
34
36
38
Power Gain (dB)
42
Efficiency (%)
Gain (dB)
20
26
36
38
40
70
21
60
Gain
20
50
19
40
18
30
17
Efficiency
15
6
10
c270051m-2100-gr11
22
40
20
VDD = 24 V
VDD = 28 V
VDD = 32 V
16
24
26
28
30
32
34
36
38
0
40
Output Power (dBm)
Output Power (dBm)
Data Sheet
34
22
54
Gain
24
32
IDQ = 65 mA, ƒ = 2170 MHz
24
22
30
CW Performance
at selected supply voltage
CW Performance
16
28
Output Power (dBm)
VDD = 28 V, IDQ = 65 mA
22
2110 IMD Up
2140 IMD Up
2170 IMD Up
Efficiency (%)
-25
55
IMD (dBc)
-15
-15
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
-5
4 of 14
Rev. 01, 2015-03-20
PTFC270051M
Typical Performance, 2170 MHz (cont.)
Small Signal CW Performance
VDD = 28 V, IDQ = 65 mA
22
Power Gain (dB)
21
-5
IRL
20
-10
19
-15
18
-20
Gain
17
16
2000
-25
Input Return Loss (dB)
0
-30
2300
c270051m-2100-gr12
2050
2100
2150
2200
2250
Frequency (MHz)
Broadband Circuit Impedance, 2170 MHz
Z Source Ω
D
Z Load Ω
Freq
[MHz]
R
jX
R
jX
2110
1.5
–2.6
9.5
5.4
2140
1.5
–2.7
8.7
5.5
2170
1.5
–2.9
7.7
5.6
Z Source
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P1dB
Class AB
Max Output Power
Zs
[Ω]
[Ω]
2110
1.5 – j2.6
10.6 + j2.6
20.6
55.0
39.50
8.9
8.3 + j8.2
22.5
64.9
38.50
7.1
2140
1.4 – j2.7
9.8 + j2.8
20.5
56.4
39.46
8.8
7.6 + j8.8
22.9
64.1
37.90
6.2
2170
1.4 – j2.9
9.2 + j2.8
20.7
56.2
39.20
8.3
6.2 + j8.3
23.0
63.8
37.40
5.5
Data Sheet
Zl
Gain
[dB]
PAE
[%]
POUT
[dBm]
Max PAE
Freq
[MHz]
POUT
[W]
5 of 14
Zl
[Ω]
Gain
[dB]
PAE
[%]
POUT
[dBm]
POUT
[W]
Rev. 01, 2015-03-20
PTFC270051M
Reference Circuit, 2170 MHz
DUT
PTFC270051M
Test Fixture Part No.
LTN/PTFC270051M V2
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower)
VDD
R101
C203
C103
R102
C102
RF_IN
C202
C201 C204
RF_OUT
C101
PTFC270051M_06
2100 MHz RO4350, .020 (169)
c 27 0 0 51 M _c d_ 1 0 -1 6 -1 3
Production test circuit assembly diagram (not to scale)
Components Information
Component
Description
Supplier
P/N
C101
Chip capacitor, 1 pF
ATC
ATC600S1R0BI250X
C102
Chip capacitor, 2.2 µF
TDK Corporation
C4532X7R1H225M160KA
C103
Chip capacitor, 12 pF
ATC
ATC600S120BT250X
C201
Chip capacitor, 1.1 pF
ATC
ATC600S1R1BT250X
C202
Chip capacitor, 12 pF
ATC
ATC600S120BT250X
C203
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C204
Chip capacitor, 12 pF
ATC
ATC600S120BT250X
R101, R102
Resistor, 10 Ω
Panasonic
ERJ-8GEYJ100V
Data Sheet
6 of 14
Rev. 01, 2015-03-20
PTFC270051M
RF Characteristics, 940 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 935 MHz, ƒ2 = 945 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
24
—
dB
Drain Efficiency
ηD
—
20.7
—
%
Intermodulation Distortion
IMD
—
–42
—
dBc
Typical Performance, 940 MHz
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
-15
60
45
23
30
Efficiency
22
15
920 MHz
940 MHz
960 MHz
21
c270051m-900-gr1.3
22
24
26
28
30
32
34
36
38
-35
-45
920 IMDL
940 IMDL
960 IMDL
-55
0
920 IMDU
940 IMDU
960 IMDU
c270051m-900-gr7
22
40
Output Power (dBm)
Data Sheet
-25
IMD (dBc)
24
Drain Efficiency (%)
Gain (dB)
Gain
24
26
28
30
32
34
36
38
40
Output Power (dBm)
7 of 14
Rev. 01, 2015-03-20
PTFC270051M
Reference Circuit, 940 MHz (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
45
-35
35
-45
25
-55
15
-65
c270051m-900-gr4
22
24
26
28
30
32
34
36
IMD Low
ACPR
IMD Up
Efficiency
-25
35
-45
25
-55
15
-65
5
c270051m-900-gr5
22
38
24
26
30
32
34
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 65 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA
-25
55
24
54
22
42
20
30
45
-35
35
-45
25
-55
15
-65
c270051m-900-gr6
24
26
28
30
32
34
5
38
26
36
66
Gain
5
Gain (dB)
IMD Low
IMD Up
ACPR
Efficiency
-15
36
65
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
28
Output Power (dBm)
-5
920 MHz
940 MHz
960 MHz
Efficiency
18
16
38
18
c270051m-900-gr8
21
25
29
33
37
6
41
Output Power (dBm)
Output Power (dBm)
Data Sheet
45
-35
Output Power (dBm)
22
55
Drain Efficiency (%)
55
65
Efficiency (%)
-25
-5
IMD (dBc), ACPR (dBc)
IMD Low
IMD Up
ACPR
Efficiency
-15
65
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
-5
8 of 14
Rev. 01, 2015-03-20
PTFC270051M
Typical Performance, 940 MHz (cont.)
CW Performance
at selected supply voltages
Small Signal CW Performance
Power Gain (dB)
22
26
-4
54
24
-8
42
20
30
Efficiency
VDD = 24 V
VDD = 28 V
VDD = 32 V
18
c270051m-900-gr9
24
26
28
30
32
34
36
22
-12
Gain
20
-16
18
18
-20
6
16
IRL
16
22
Power Gain (dB)
Gain
24
66
Efficiency (%)
26
Input Return Loss (dB)
VDD = 28 V, IDQ = 65 mA
IDQ = 65 mA, ƒ = 960 MHz
38
40
-24
1000 1050 1100
c270051m-900-gr12
750
800
850
900
950
Frequency (MHz)
Output Power (dBm)
Broadband Circuit Impedance
Z Source Ω
D
Z Load Ω
Freq
[MHz]
R
jX
R
jX
920
3.3
10
25.6
13.2
940
3.4
10.2
24.7
13.3
960
3.5
10.3
24.3
14.7
Z Source
Z Load
G
S
Loadpull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P1dB
Class AB
Max Output Power
Freq
[MHz]
Zs
[Ω]
920
940
960
3.55 + j10.3
Max PAE
[Ω]
Gain
[dB]
PAE
[%]
POUT
[dBm]
POUT
[W]
3.35 + j10
25.7 + j4.7
25.5
62.2
39.40
3.4 + j10.2
24.8 + j6.3
25.6
62.1
39.35
24.4 + j6.6
25.3
60.3
39.10
Data Sheet
Zl
[Ω]
Gain
[dB]
PAE
[%]
POUT
[dBm]
POUT
[W]
8.7
25.6 + j21.7
27.6
70.7
38.00
6.3
8.6
24.6 + j20.4
27.3
69.2
38.10
6.5
8.1
24.1 + j22.8
27.3
68.2
37.50
5.6
9 of 14
Zl
Rev. 01, 2015-03-20
PTFC270051M
RF Characteristics, 2655 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
20.9
—
dB
Drain Efficiency
ηD
—
19
—
%
Intermodulation Distortion
IMD
—
–40
—
dBc
Typical Performance, 2655 MHz
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
Gain
40
19
30
Efficiency
20
2620 MHz
2655 MHz
2690 MHz
17
16
24
26
28
30
32
34
36
2620 IMD Low
2620 IMD Up
2655 IMD Low
-35
2655 IMD Up
2690 IMD Low
2690 IMD Up
38
-45
0
c270051m-2600-gr7
22
40
24
26
28
30
32
34
36
38
40
Output Power (dBm)
Output Power (dBm)
Data Sheet
-25
10
c270051m-2600-gr1.3
22
IMD (dBc)
50
20
18
-15
Drain Efficiency (%)
Gain (dB)
21
60
10 of 14
Rev. 01, 2015-03-20
PTFC270051M
Typical Performance, 2655 MHz (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
45
-35
35
-45
25
-55
15
-65
5
c270051m-2600-gr4
22
24
26
28
30
32
34
36
38
IMD Low
IMD Up
ACPR
Efficiency
-25
35
-45
25
-55
15
-65
40
c270051m-2600-gr5
22
24
26
30
32
34
36
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 65 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 65 mA
-25
45
-35
35
19
40
18
30
-55
15
16
5
15
c270051m-2600-gr6
26
28
30
32
34
36
38
17
Efficiency
20
2620 MHz
2655 MHz
2690 MHz
10
c270051m-2600-gr8
22
40
60
50
25
-65
Gain
20
-45
24
5
40
70
21
55
Gain (dB)
-15
38
22
65
IMD Low
IMD Up
ACPR
Efficiency
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
28
Output Power (dBm)
-5
24
26
28
30
32
34
36
38
0
40
Output Power (dBm)
Output Power (dBm)
Data Sheet
45
-35
Output Power (dBm)
22
55
Drain Efficiency (%)
55
65
Efficiency (%)
-25
-5
IMD (dBc), ACPR (dBc)
IMD Low
IMD Up
ACPR
Efficiency
-15
65
Drain Efficiency (%)
IMD (dBc), ACPR (dBc)
-5
11 of 14
Rev. 01, 2015-03-20
PTFC270051M
Typical Performance, 2655 MHz (cont.)
CW Performance
at selected supply voltages
Small Signal CW Performance
VDD = 28 V, IDQ = 65 mA
IDQ = 65 mA, ƒ = 2690 MHz
22
70
Gain
VDD = 24 V
VDD = 28 V
VDD = 32 V
19
40
18
30
Efficiency
17
20
16
10
15
c270051m-2600-gr11
22
22
-5
26
30
34
38
Gain
21
-10
20
-15
19
-20
IRL
18
0
17
2590
42
-25
Input Return Loss (dB)
50
Power Gain (dB)
20
0
60
Efficiency (%)
Power Gain (dB)
21
23
-30
2740
c270051m-2600-gr12
2640
Output Power (dBm)
2690
Frequency (MHz)
Broadband Circuit Impedance
Z Source Ω
D
Z Load Ω
Freq
[MHz]
R
jX
R
jX
2490
1.5
–4.1
7.2
1.5
2590
1.5
–4.6
6.6
0.7
2690
1.5
–5.5
6.3
-0.6
Z Source
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[Ω]
Zl
[Ω]
Gain
[dB]
PAE
[%]
POUT
[dBm]
POUT
[W]
Zl
[Ω]
Gain
[dB]
PAE
[%]
POUT
[dBm]
POUT
[W]
2490
1.5 – j4.1
8.2 + j0.3
19.7
55.6
39.0
7.94
6.2 + j2.8
20.9
62.2
38.4
6.9
2590
1.5 – j4.6
6.9 – j0.8
18.8
55.6
39.0
7.94
5.0 + j2.1
21.0
63.4
37.9
6.2
2690
1.5 – j5.5
7.8 – j2.0
18.4
55.6
39.0
7.94
4.9 + j0.8
20.4
63.6
37.8
6.0
Data Sheet
12 of 14
Rev. 01, 2015-03-20
PTFC270051M
Package Outline Specifications
Package PG-SON-10
>@3/$&(6
;
>@3/$&(6
>@
>@
>@
>@
6
>@
;
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [0.004].
4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm.
5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization), source.
6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
13 of 14
Rev. 01, 2015-03-20
PTFC270051M V2
Revision History
Revision
Date
Data Sheet
Page
Subjects (major changes since last revision)
01
2015-03-20
Production
All
Specifications and performance represent released product.
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Edition 2015-03-20
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
14 of 14
Rev. 01, 2015-03-20