TC1016 Datasheet

TC1016
80 mA, Tiny CMOS LDO With Shutdown
Features
General Description
• Space-Saving 5-Pin SC-70 and SOT-23
Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 80 mA Output Current
• Requires only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µsec (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA(typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators
The TC1016 is a high-accuracy (typically ±0.5%),
CMOS upgrade for bipolar low dropout regulators
(LDOs). The TC1016 is offered in both the SC-70 and
SOT-23 packages. The SC-70 package represents a
50% footprint reduction versus the popular SOT-23
package.
Applications
•
•
•
•
•
•
Cellular/GSM/PHS Phones
Battery-operated Systems
Portable Computers
Medical Instruments
Electronic Games
Pagers
Developed specifically for battery-powered systems,
the device’s CMOS construction consumes only 53 µA
typical supply current over the entire 80 mA operating
load range. This can be as much as 60 times less than
the quiescent operating current consumed by bipolar
LDOs.
With small-space requirements and cost in mind, the
TC1016 was developed to be stable over the entire
input voltage and output current operating range using
low value (1 µF ceramic), low Equivalent Series
Resistance (ESR) output capacitors.
Additional
integrated features (such as shutdown, overcurrent
and overtemperature protection) further reduce board
space and cost of the entire voltage-regulating
application.
Key performance parameters for the TC1016 are low
drop out voltage (150 mV (typ.) at 80 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Pin Configurations
SOT-23
SC-70
VIN
VOUT
VOUT
NC
5
4
5
4
TC1016
1
2
TC1016
3
SHDN NC GND
© 2005 Microchip Technology Inc.
1
VIN
2
3
GND SHDN
DS21666B-page 1
TC1016
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissipation................ Internally Limited (Note 7)
Operating Temperature ................. -40°C < TJ < 125°C
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........VIN + 0.3V to -0.3V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of the
specifications is not implied. Exposure to Absolute Maximum
Rating Conditions for extended periods may affect device
reliability
ELECTRICAL CHARACTERISTICS
VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for
junction temperatures of – 40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Sym
Min
Typ
Max
Units
VIN
2.7
—
6.0
V
mA
Test Conditions
Note 1
IOUTMAX
80
—
—
VOUT
VR – 2.5%
VR ±0.5%
VR + 2.5%
TCVOUT
—
40
—
(ΔVOUT/ΔVIN)/VR
—
0.01
0.2
Load Regulation (Note 4)
ΔVOUT/VR
—
0.23
1
%
Dropout Voltage (Note 5)
VIN – VOUT
—
—
—
2
100
150
—
200
300
mV
IIN
—
53
90
µA
SHDN = VIH, IL = 0
IINSD
—
0.05
0.5
µA
SHDN = 0V
Output Voltage
VOUT Temperature Coefficient
Line Regulation
Supply Current
Shutdown Supply Current
V
Note 2
ppm/°C Note 3
%/V
(VR + 1V) < VIN < 6V
IL = 0.1 mA to IOUTMAX
IL = 100 µA
IL = 50 mA
IL = 80 mA
PSRR
—
58
—
dB
f =1 kHz, IL = 50 mA
Wake-Up Time
(from Shutdown mode)
tWK
—
10
—
µs
VIN = 5V, IL = 60 mA,
CIN = 1 µF, COUT = 1 µF,
f = 100 Hz
Settling Time
(from Shutdown Mode)
tS
—
32
—
µs
VIN = 5V, IL = 60 mA,CIN =
1 µF, COUT = 1 µF, f =
100 Hz
IOUTSC
—
120
—
mA
VOUT = 0V
VOUT/PD
—
0.04
—
V/W
Notes 6, 7
TSD
—
160
—
°C
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
ΔTSD
—
10
—
°C
Output Noise
eN
—
800
—
nV/√Hz
SHDN Input High Threshold
VIH
60
—
—
%VIN
VIN = 2.7V to 6.0V
SHDN Input Low Threshold
VIL
—
—
15
%VIN
VIN = 2.7V to 6.0V
Thermal Shutdown Hysteresis
Note
f = 10 kHz
1:
2:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
3:
TCV
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at VIN = 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
5:
6:
7:
6
( VOUTMAX – V OUTMIN ) × 10
= -------------------------------------------------------------------------------------OUT
V OUT × ΔT
DS21666B-page 2
© 2005 Microchip Technology Inc.
TC1016
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.25
0.25
VOUT = 2.7V
VOUT = 2.7V
Dropout Voltage (V)
Dropout Voltage (V)
0.2
+125°C
0.15
+25°C
-40°C
0.1
0.05
0
0.20
ILOAD = 80 mA
0.15
ILOAD = 50mA
0.10
0.05
0
10
20
30
40
50
60
70
80
-45
-20
5
Load Current (mA)
FIGURE 2-1:
Current.
Dropout Voltage vs. Output
FIGURE 2-4:
Temperature.
55
80
105
130
Dropout Voltage vs.
0.18
0.35
VOUT = 2.7V
VOUT = 2.7V
Full Load = 0 – 80 mA
0.16
VIN = 3.3V
0.25
Short Circuit Current (A)
0.30
Load Regulation (%)
30
Temperature(°C)
VIN = 3.7V
0.20
VIN = 6.0V
0.15
0.10
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0.05
-45
-20
5
30
55
80
105
1
130
2
3
5
6
Input Voltage
Temperature (°C)
FIGURE 2-2:
Temperature.
4
Load Regulation vs.
57.0
FIGURE 2-5:
Input Voltage.
Short Circuit Current vs.
57.0
VOUT = 2.7V
VOUT = 2.7V
VIN = 6V
56.0
56.0
+125°C
55.0
Supply Current (µA)
Supply Current (µA)
55.0
54.0
53.0
+25°C
52.0
51.0
50.0
-40°C
54.0
VIN = 3.3V
53.0
52.0
51.0
50.0
49.0
49.0
48.0
48.0
47.0
47.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
-45
-20
FIGURE 2-3:
Voltage.
Supply Current vs. Input
© 2005 Microchip Technology Inc.
5
30
55
80
105
130
Temperature(°C)
Input Voltage (V)
FIGURE 2-6:
Temperature.
Supply Current vs.
DS21666B-page 3
TC1016
0.25
0.20
VOUT = 3.0V
ILOAD = 80 mA
0.16
Dropout Voltage (V)
0.2
Dropout Voltage (V)
VOUT = 3.0V
0.18
+125°C
0.15
+25°C
0.1
-40°C
0.14
0.12
ILOAD = 50 mA
0.10
0.08
0.06
0.04
0.05
0.02
0.00
0
-45
0
10
20
30
40
50
60
70
-20
5
30
FIGURE 2-7:
Current.
FIGURE 2-10:
Temperature.
54.0
0.30
VOUT = 3.0V
Full Load = 0 – 80 mA
VIN = 6.0V
Supply Current (µA)
Load Regulation (%)
105
130
Dropout Voltage vs.
VOUT = 3.0V
53.0
0.25
VIN = 4.0V
VIN = 3.3V
0.15
0.10
0.05
+125°C
52.0
+25°C
51.0
50.0
49.0
-40°C
48.0
0.00
47.0
-45
-20
5
30
55
80
105
3.3
130
3.6
3.9
4.2
Temperature (°C)
FIGURE 2-8:
Temperature.
4.5
4.8
5.1
5.4
5.7
6.0
Input Voltage (V)
Load Regulation vs.
FIGURE 2-11:
Voltage
54.0
Supply Current vs. Input
2.797
VOUT = 3.0V
+25°C
VIN = 6.0V
2.796
53.0
VOUT = 2.8V
+125°C
Output Voltage (V)
Supply Current (µA)
80
Temperature (°C)
Dropout Voltage vs. Output
0.20
55
80
Load Current (mA)
52.0
VIN = 3.3V
51.0
50.0
49.0
2.795
2.794
2.793
2.792
2.791
-40°C
48.0
2.790
47.0
2.789
-45
-20
5
30
55
80
105
130
3.3
3.6
Temperature (°C)
FIGURE 2-9:
Temperature.
DS21666B-page 4
Supply Current vs.
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6
Input Voltage (V)
FIGURE 2-12:
Voltage.
Output Voltage vs. Supply
© 2005 Microchip Technology Inc.
TC1016
2.797
2.798
VIN = 3.3V
2.796
VOUT = 2.8V
Output Voltage (V)
Output Voltage (V)
2.794
2.793
VIN = 6.0V
2.792
VOUT = 2.8V
2.797
2.795
2.791
2.790
VIN = 3.3V
2.796
2.795
2.794
VIN = 6.0V
2.793
VIN = 4.0V
2.792
2.789
2.791
2.788
2.790
2.789
2.787
0
10
20
30
40
50
60
70
-45
80
-20
FIGURE 2-13:
Current.
Output Voltage vs. Output
FIGURE 2-16:
Temperature.
30
55
80
105
130
Output Voltage vs.
100
0.250
0.200
+125°C
VIN = 4.0V
VOUT = 3.0V
CIN = 1 μF
COUT = 1 μF
IOUT = 40 mA
10
Noise (µV/√Hz)
Shutdown Current (µA)
5
Temperature (°C)
Output Current (mA)
0.150
0.100
1
0.1
0.050
+25°C
0.000
0.01
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
10
6.0
100
FIGURE 2-14:
Voltage.
0
1 .E +03
FIGURE 2-17:
0
1.E +0 5
IOUT = 100 μA
COUT = 1 μF X7R Ceramic
VINDC = 2.8V
VINAC = 100 mVp-p
VOUTDC = 1.8V
-10
-20
-20
-30
-30
PSRR(dB)
PSRR(dB)
-10
Shutdown Current vs. Input
1. E +01
1000
10000
100000
1000000
Frequency (Hz)
Input Voltage (V)
-40
-50
10
Output Noise vs. Frequency.
1 000
1 00000
VINDC = 2.8V
VINAC = 100 mVp-p
VOUTDC = 1.8V
IOUT = 1 mA
COUT = 1 μF X7R Ceramic
-40
-50
-60
-60
-70
-70
-80
-80
10
10
100
1K
10K
100K
Frequency (Hz)
FIGURE 2-15:
Power Supply Rejection
Ratio vs. Frequency.
© 2005 Microchip Technology Inc.
100
1K
10K
100K
1M
1M
Frequency (Hz)
FIGURE 2-18:
Power Supply Rejection
Ratio vs. Frequency.
DS21666B-page 5
TC1016
0
-10
10
1 000
1 00000
IOUT = 50 mA
COUT = 1 μF X7R Ceramic
VINDC = 2.8V
VINAC = 100 mVp-p
VOUTDC = 1.8V
VIN = 2.8V
CIN = 10 µF
COUT = 1 µF Ceramic
PSRR(dB)
-20
-30
VOUT = 1.8V
-40
-50
IOUT = 0.1 mA to 60 mA
-60
-70
-80
10
100
1K
10K
100K
1M
Frequency (Hz)
FIGURE 2-19:
Power Supply Rejection
Ratio vs. Frequency.
VIN = 2.8V
CIN = 10 µF
COUT = 1 µF Ceramic
FIGURE 2-22:
Load Transient Response.
VIN = 2.8V
CIN = 10 µF
COUT = 1 µF Ceramic
VOUT = 1.8V
VOUT = 1.8V
IOUT = 0.1 mA to 60 mA
Shutdown Input
FIGURE 2-20:
VIN = 2.8V
CIN = 10 µF
COUT = 4.7 µF Ceramic
Wake-Up Response.
FIGURE 2-23:
Load Transient Response.
ILOAD = 60 mA
CIN = 0 µF
COUT = 1 µF Ceramic
VOUT = 1.8V
VOUT = 1.8V
IOUT = 2.8V to 3.8V
Shutdown Input
FIGURE 2-21:
DS21666B-page 6
Wake-Up Response.
FIGURE 2-24:
Line Transient Response.
© 2005 Microchip Technology Inc.
TC1016
ILOAD = 60 mA
CIN = 0 µF
COUT = 4.7 µF Ceramic
VOUT = 1.8V
VOUT = 2.8V to 3.8V
FIGURE 2-25:
Line Transient Response.
ILOAD = 100 µA
CIN = 0 µF
COUT = 1 µF Ceramic
VIN = 4V to 5V
VOUT = 2.8V
FIGURE 2-26:
Line Transient Response.
ILOAD = 100 µA
CIN = 0 µF
COUT = 10 µF Ceramic
VIN = 4V to 5V
VOUT = 2.8V
FIGURE 2-27:
Line Transient Response.
© 2005 Microchip Technology Inc.
DS21666B-page 7
TC1016
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
5-Pin
Pin No.
SC-70 5-Pin SOT-23
3.1
1
3
2
4
Name
SHDN
NC
Function
Shutdown control input
No connect
3
2
GND
Ground terminal
4
5
VOUT
Regulated voltage output
5
1
VIN
Unregulated supply input
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.05 µA (typ.)
3.2
Ground Terminal (GND)
For best performance, it is recommended that the
ground pin be tied to a ground plane.
3.3
3.4
Unregulated Supply Input (VIN)
The minimum VIN has to meet two conditions in order
to ensure that the output maintains regulation:
VIN ≥ 2.7V and VIN ≥ [(VR + 2.5%) + VDROPOUT]. The
maximum VIN should be less than or equal to 6V.
Power dissipation may limit VIN to a lower potential in
order to maintain a junction temperature below 125°C.
Refer to Section 5.0 “Thermal Considerations”, for
determining junction temperature.
It is recommended that VIN be bypassed to GND with a
ceramic capacitor.
Regulated Voltage Output (VOUT)
Bypass the regulated voltage output to GND with a
minimum capacitance of 1 µF. A ceramic bypass
capacitor is recommended for best performance.
DS21666B-page 8
© 2005 Microchip Technology Inc.
TC1016
4.0
DETAILED DESCRIPTION
MOSFET is turned on. If the internal power dissipation
is still high enough for the junction to rise to 160°C, it
will again shut off and cool. The maximum operating
junction temperature of the device is 125°C. Steadystate operation at or near the 160°C overtemperature
point can lead to permanent damage of the device.
The TC1016 is a precision, fixed-output, linear voltage
regulator. The internal linear pass element is a Pchannel MOSFET. As with all P-channel CMOS LDOs,
there is a body drain diode, with the cathode connected
to VIN and the anode connected to VOUT (Figure 4-1).
The output voltage (VOUT) remains stable over the
entire input operating voltage range (2.7V to 6.0V), as
well as the entire load range (0 mA to 80 mA). The
output voltage is sensed through an internal resistor
divider and compared with a precision internal voltage
reference. Several fixed-output voltages are available
by changing the value of the internal resistor divider.
As shown in Figure 4-1, the output voltage of the LDO
is sensed and divided down internally to reduce
external component count. The internal error amplifier
has a fixed, band gap reference on the inverting input,
with the sensed output voltage on the non-inverting
input. The error amplifier output will pull the gate
voltage down until the inputs of the error amplifier are
equal in order to regulate the output voltage.
Figure 4-2 shows a typical application circuit. The regulator is enabled anytime the shutdown input pin is at
or above VIH, and shutdown (disabled) anytime the
shutdown input pin is below VIL. For applications where
the SHDN feature is not used, tie the SHDN pin directly
to the input supply voltage source. While in shutdown,
the supply current decreases to 0.05 µA (typ.) and the
P-channel MOSFET is turned off.
By sensing the current in the P-channel MOSFET, the
maximum current delivered to the load is limited to a
typical value of 120 mA, preventing excessive current
from damaging the Printed Circuit Board (PCB) in the
event of a shorted or faulted load.
An internal thermal sensing device is used to monitor
the junction temperature of the LDO. When the sensed
temperature is over the set threshold of 160°C (typ.),
the P-channel MOSFET is turned off. When the
MOSFET is off, the power dissipation internal to the
device is almost zero. The device cools until the
junction temperature is approximately 150°C and the
As shown in Figure 4-2, batteries have internal source
impedance. An input capacitor in used to lower the
input impedance of the LDO. In some applications, high
input impedance can cause the LDO to become
unstable. Adding more input capacitance can
compensate for this.
1 SHDN
VIN 5
Current Limit
2 NC
VIN
SHDN
VREF
Control
EA
+
Body
Diode
Error Amp
3 GND
VOUT 4
Over
Temp.
FIGURE 4-1:
R1 R2
Feedback Resistors
TC1016 Block Diagram.
1
SHDN
CIN
TC1016
RSOURCE
BATTERY
VIN 5
2
3
GND
VOUT 4
Load
COUT
FIGURE 4-2:
1 µF Ceramic
NC
1 µF Ceramic
Typical Application Circuit.
© 2005 Microchip Technology Inc.
DS21666B-page 9
TC1016
4.1
Input Capacitor
4.3
Low input source impedance is necessary for the LDO
to operate properly. When operating from batteries, or
in applications with long lead length (> 10") between
the input source and the LDO, some input capacitance
is required. A minimum of 0.1 µF is recommended for
most applications and the capacitor should be placed
as close to the input of the LDO as is practical. Larger
input capacitors will help reduce the input impedance
and further reduce any high-frequency noise on the
input and output of the LDO.
4.2
Output Capacitor
A minimum output capacitance of 1 µF for the TC1016
is required for stability. The ESR requirements on the
output capacitor are between 0 and 2 ohms. The output
capacitor should be located as close to the LDO output
as is practical. Ceramic materials X7R and X5R have
low temperature coefficients and are well within the
acceptable ESR range required. A typical 1 µF X5R
0805 capacitor has an ESR of 50 milli-ohms. Larger
output capacitors can be used with the TC1016 to
improve dynamic behavior and input ripple rejection
performance.
Ceramic, aluminum electrolytic or tantalum capacitor
types can be used. Since many aluminum electrolytic
capacitors freeze at approximately –30°C, ceramic or
solid tantalums are recommended for applications
operating below –25°C. When operating from sources
other than batteries, supply noise rejection and transient response can be improved by increasing the
value of the input and output capacitors, and by
employing passive filtering techniques.
Turn-On Response
The turn on response is defined as two separate
response categories, Wake-up Time (tWK) and Settling
Time (tS).
The TC1016 has a fast tWK (10 µsec, typ.) when
released from shutdown. Figure 4-3 provides the
TC1016’s tWK. The tWK is defined as the time it takes
for the output to rise to 2% of the VOUT value after being
released from shutdown.
The total turn-on response is defined as the tS (see
Figure 4-3). The tS (inclusive with tWK) is defined as the
condition when the output is within 98% of its fully
enabled value (42 µsec, typ.) when released from shutdown. The settling time of the output voltage is
dependent on load conditions and output capacitance
on VOUT (RC response).
Table 4-1 demonstrates the typical turn-on response
timing for different input voltage power-up frequencies:
VOUT = 2.8V, VIN = 5.0V, IOUT = 60 mA and COUT = 1 µF.
TABLE 4-1:
TYPICAL TURN-ON
RESPONSE TIMING
Frequency
Typical (tWK)
Typical (tS)
1000 Hz
5.3 µsec
14 µsec
500 Hz
5.9 µsec
16 µsec
100 Hz
9.8 µsec
32 µsec
50 Hz
14.5 µsec
52 µsec
10 Hz
17.2 µsec
77 µsec
VIH
SHDN
VIL
tS
98%
VOUT
2%
tWK
FIGURE 4-3:
DS21666B-page 10
Wake-Up Time from Shutdown.
© 2005 Microchip Technology Inc.
TC1016
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal-protection circuitry shuts the
regulator off when die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
Given the following example:
VOUT
= 2.8V ±2.5%
ILOAD
= 60 mA (output current)
Find:
Power Dissipation
Internal power dissipation:
P DMAX = ( V IN_MAX – V OUT_MIN ) × ILOAD
The TC1016 is available in the SC-70 package. The
thermal resistance for the SC-70 package is approximately 450°C/W when the copper area used in the
PCB layout is similar to the JEDEC J51-7 high thermal
conductivity or Semi G42-88 standards. For applications with larger or thicker copper areas, the thermal
resistance can be lowered. See AN792 “A Method to
Determine How Much Power a SOT23 Can Dissipate in
an Application” (DS00792), for a method to determine
the thermal resistance for a particular application.
The TC1016 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steadystate junction temperature is rated at 125°C. The power
dissipation within the device is equal to:
EQUATION 5-1:
PD = ( VIN – V OUT ) × I LOAD + V IN × I GND
The VIN x IGND term is typically very small when compared to the (VIN-VOUT) x ILOAD term simplifying the
power dissipation within the LDO to be:
EQUATION 5-2:
= ( 4.1V – 2.8 × ( 0.975 ) ) × 60mA
= 82.2mW
2.
dissipation
EQUATION 5-3:
( T J_MAX – T A_MAX )
P DMAX = ------------------------------------------------RθJA
Junction temperature:
T J_MAX =
=
=
=
3.
P DMAX × Rθ JA
82.2mWatts × 450°C/W + T AMAX
37°C + 55°C
92°C
Maximum allowable dissipation:
T J_MAX – T A_MAX
P D = -------------------------------------------Rθ JA
125°C – 55°C
= ----------------------------------450°C/W
= 155mW
In this example, the TC1016 dissipates approximately
82.2 mW and the junction temperature is raised 37°C
over the 55°C ambient to 92°C. The absolute maximum
power dissipation is 155 mW when given a maximum
ambient temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in
Equation 5-2 and Equation 5-3.
5.3
PD = ( VIN – VOUT ) × I LOAD
To determine the maximum power
capability, the following equation is used:
= 3.0V to 4.1V
TAMAX = 55°C (max. ambient temp.)
1.
5.2
VIN
Layout Considerations
The primary path for heat conduction out of the SC-70
package is through the package leads. Using heavy,
wide traces at the pads of the device will facilitate the
removal of heat within the package, thus lowering the
thermal resistance RθJA. By lowering the thermal
resistance, the maximum internal power dissipation
capability of the package is increased.
SHDN
Where:
TJ_MAX = maximum junction temperature allowed
VIN
U1
VOUT
TA_MAX = the maximum ambient temperature allowed
RθJA
= the thermal resistance from junction-to-air
C2
C1
GND
FIGURE 5-1:
© 2005 Microchip Technology Inc.
Suggested layout
DS21666B-page 11
TC1016
6.0
PACKAGE INFORMATION
6.1
Package Marking Information
5-Lead SC-70
Example:
Part Number
XXN (Front)
YWW (Back)
5-Lead SC-70
XXNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS21666B-page 12
Code
TC1016 – 1.8VLT
AE
TC1016 – 1.85VLT
AW
TC1016 – 2.6VLT
AF
TC1016 – 2.7VLT
AG
TC1016 – 2.8VLT
AH
TC1016 – 2.85VLT
AJ
TC1016 – 2.9VLT
AK
TC1016 – 3.0VLT
AL
TC1016 – 3.3VLT
AM
TC1016 – 4.0VLT
AP
AE7 (Front)
432 (Back)
Example:
AE74
Customer-specific information*
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc.
TC1016
6.1
Package Marking Information (Continued)
Part Number
TC1016 – 1.8VCT
5-Lead SOT-23
TC1016 – 1.85VCT
TC1016 – 2.6VCT
TC1016 – 2.7VCT
XXNN
TC1016 – 2.8VCT
TC1016 – 2.85VCT
TC1016 – 2.9VCT
TC1016 – 3.0VCT
TC1016 – 3.3VCT
TC1016 – 4.0VCT
© 2005 Microchip Technology Inc.
Code
HK
HW
HL
HM
HP
HQ
HR
HS
HT
HU
Example
HK73
DS21666B-page 13
TC1016
5-Lead Plastic Small Outline Transistor (LT) (SC-70)
E
E1
D
p
B
n
1
Q1
A2
c
A
A1
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff
Overall Width
Molded Package Width
Overall Length
Foot Length
Top of Molded Pkg to Lead Shoulder
Lead Thickness
Lead Width
A
A2
A1
E
E1
D
L
Q1
c
B
MIN
.031
.031
.000
.071
.045
.071
.004
.004
.004
.006
INCHES
NOM
5
.026 (BSC)
MAX
.043
.039
.004
.094
.053
.087
.012
.016
.007
.012
MILLIMETERS*
NOM
5
0.65 (BSC)
0.80
0.80
0.00
1.80
1.15
1.80
0.10
0.10
0.10
0.15
MIN
MAX
1.10
1.00
0.10
2.40
1.35
2.20
0.30
0.40
0.18
0.30
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .005" (0.127mm) per side.
JEITA (EIAJ) Standard: SC-70
Drawing No. C04-061
Dimensions: inches (mm)
DS21666B-page 14
© 2005 Microchip Technology Inc.
TC1016
5-Lead Plastic Small Outline Transistor (OT) (SOT-23)
E
E1
p
B
p1
n
D
1
α
c
A
L
β
Units
Dimension Limits
n
p
MIN
φ
A2
A1
INCHES*
NOM
5
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
.006
.017
5
5
MAX
MIN
MILLIMETERS
NOM
5
0.95
1.90
1.18
1.10
0.08
2.80
1.63
2.95
0.45
5
0.15
0.43
5
5
Number of Pins
Pitch
p1
Outside lead pitch (basic)
Overall Height
A
.035
.057
0.90
Molded Package Thickness
A2
.035
.051
0.90
Standoff
A1
.000
.006
0.00
Overall Width
E
.102
.118
2.60
Molded Package Width
E1
.059
.069
1.50
Overall Length
D
.110
.122
2.80
Foot Length
L
.014
.022
0.35
φ
Foot Angle
0
10
0
c
Lead Thickness
.004
.008
0.09
Lead Width
B
.014
.020
0.35
α
Mold Draft Angle Top
0
10
0
β
Mold Draft Angle Bottom
0
10
0
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .005" (0.127mm) per side.
MAX
1.45
1.30
0.15
3.00
1.75
3.10
0.55
10
0.20
0.50
10
10
EIAJ Equivalent: SC-74A
Drawing No. C04-091
© 2005 Microchip Technology Inc.
DS21666B-page 15
TC1016
NOTES:
DS21666B-page 16
© 2005 Microchip Technology Inc.
TC1016
APPENDIX A:
REVISION HISTORY
Revision B (March 2005)
• Updated Section 6.0 “Package Information” to
include old and new packaging examples, as well
as replaced SC-70 package diagram with up-todate version. Added additional voltage options
• Added SOT-23 package and voltage options.
• Applied new template and rearranged sections to
be consistent with current documentation.
.Revision A (October 2001)
• Original Release of this Document.
© 2005 Microchip Technology Inc.
DS21666B-page 17
TC1016
NOTES:
DS21666B-page 18
© 2005 Microchip Technology Inc.
TC1016
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X.XX
X
XXXX
Device
Voltage
Options
Temperature
Range
Package
Device:
TC1016:
Voltage Options*:
(Standard)
1.8V
1.85V
2.6V
2.7V
2.8V
2.85V
2.9V
3.0V
3.3V
4.0V
Examples:
a)
TC1016-1.8VCTTR:
80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
a)
TC1016-1.8VLTTR:
80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
b)
TC1016-1.85VCTTR: 80 mA Tiny CMOS
80 mA Tiny CMOS LDO with Shutdown
LDO with Shutdown,
SOT-23 Package.
c)
TC1016-1.85VLTTR: 80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
d)
TC1016-2.6VCTTR:
80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
e)
TC1016-2.6VLTTR:
80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
f)
TC1016-2.7VCTTR:
80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
g)
TC1016-2.7VLTTR:
80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
h)
TC1016-2.8VCTTR:
80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
i)
TC1016-2.8VLTTR:
80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
j)
TC1016-2.85VLTTR: 80 mA Tiny CMOS LDO
* Other voltage options available. Please contact your local
Microchip sales office for details.
Temperature Range:
V
= -40°C to +125°C
Packages:
LTTR = 5-pin SC-70 (Tape and Reel)
CTTR = 5-pin SOT-23 (Tape and Reel)
with Shutdown,
SC-70 Package.
© 2005 Microchip Technology Inc.
DS21666A-page19
TC1016
NOTES:
DS21666A-page20
© 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK,
MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail,
PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance and WiperLock are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2005 Microchip Technology Inc.
DS21666B-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
India - Bangalore
Tel: 91-80-2229-0061
Fax: 91-80-2229-0062
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
India - New Delhi
Tel: 91-11-5160-8631
Fax: 91-11-5160-8632
Austria - Weis
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark - Ballerup
Tel: 45-4450-2828
Fax: 45-4485-2829
China - Chengdu
Tel: 86-28-8676-6200
Fax: 86-28-8676-6599
Japan - Kanagawa
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
France - Massy
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
China - Fuzhou
Tel: 86-591-8750-3506
Fax: 86-591-8750-3521
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Germany - Ismaning
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Alpharetta, GA
Tel: 770-640-0034
Fax: 770-640-0307
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
England - Berkshire
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Taiwan - Hsinchu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Qingdao
Tel: 86-532-502-7355
Fax: 86-532-502-7205
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
San Jose
Mountain View, CA
Tel: 650-215-1444
Fax: 650-961-0286
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
03/01/05
DS21666B-page 22
© 2005 Microchip Technology Inc.