MICROCHIP TC1017

M
TC1017
150 mA, Tiny CMOS LDO With Shutdown
Features
General Description
• Space-saving 5-Pin SC-70 and SOT-23
Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 150 mA Output Current
• Requires Only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µsec (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA (typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar low dropout regulators. It is
offered in a SC-70 or SOT-23 package. The SC-70
package represents a 50% reduced footprint versus
the popular SOT-23 package.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiescent operating current consumed by
bipolar LDOs.
Applications
•
•
•
•
•
•
Cellular/GSM/PHS Phones
Battery Operated Systems
Portable Computers
Medical Instruments
Electronic Games
Pagers
With small-space requirements and cost in mind, the
TC1017 was developed to be stable over the entire
input voltage and output current operating range using
low value (1 µF ceramic), low equivalent series
resistance output capacitors. Additional integrated
features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage regulating
application.
Key performance parameters for the TC1017 are low
dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Package Types
SC-70
VIN
VOUT
5
4
TC1017
1
2
SHDN NC
SOT-23
3
GND
VOUT
NC
5
4
TC1017
1
VIN
 2003 Microchip Technology Inc.
2
3
GND SHDN
DS21813B-page 1
TC1017
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage ......................................... (–0.3) to (VIN + 0.3)
Power Dissipation .......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ................. VIN + 0.3V to –0.3V
Function
Shutdown control input.
SHDN
NC
No connect
GND
Ground terminal
VOUT
Regulated voltage output
VIN
Unregulated supply input
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH , TA = +25°C
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
VOUT Temperature Coefficient
Sym
Min
Typ
Max
Units
VIN
2.7
—
6.0
V
IOUTMAX
150
—
—
mA
Test Conditions
Note 1
V OUT
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
Note 2
TCV OUT
—
40
—
ppm/°C
Note 3
|(∆VOUT /∆VIN)| / VR
—
0.04
0.2
%/V
Load Regulation (Note 4)
|∆VOUT| / VR
—
0.38
1.5
%
Dropout Voltage (Note 5)
VIN – VOUT
—
—
—
—
2
90
180
285
—
200
350
500
mV
IL = 100 µA
IL = 50 mA
IL = 100 mA
IL = 150 mA
IIN
—
53
90
µA
SHDN = VIH , IL = 0
Line Regulation
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Wake-Up Time
(from Shutdown Mode)
Note 1:
2:
3:
4:
5:
6:
7:
(VR + 1V) < VIN < 6V
IL = 0.1 mA to IOUTMAX
IINSD
—
0.05
2
µA
SHDN = 0V
PSRR
—
58
—
dB
f =1 kHz, IL = 50 mA
tWK
—
10
—
µs
V IN = 5V, IL = 60 mA,
CIN = COUT =1 µF,
f = 100 Hz
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
6
( V O UTMAX – V OUTMIN ) × 10
TCV OUT = -------------------------------------------------------------------------------------V OUT × ∆T
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for
more details.
DS21813B-page 2
 2003 Microchip Technology Inc.
TC1017
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH , TA = +25°C
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.
Parameter
Settling Time
(from Shutdown Mode)
Output Short-Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Sym
Min
Typ
Max
Units
tS
—
32
—
µs
V IN = 5V, IL = 60 mA,
CIN = 1 µF, COUT =
1 µF, f = 100 Hz
Test Conditions
IOUTSC
—
120
—
mA
V OUT = 0V, Average
Current
VOUT/PD
—
0.04
—
V/W
Notes 6, 7
TSD
—
160
—
°C
∆TSD
—
10
—
°C
Output Noise
eN
—
800
—
nV/√Hz
SHDN Input High Threshold
VIH
45
—
—
%V IN
VIN = 2.7V to 6.0V
SHDN Input Low Threshold
V IL
—
—
15
%V IN
VIN = 2.7V to 6.0V
Note 1:
2:
3:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
TCV
4:
5:
6:
7:
f = 10 kHz
6
(V
–V
) × 10
O UTMAX
OUTMIN
= -------------------------------------------------------------------------------------OUT
V OUT × ∆T
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1, “Thermal Considerations”, for
more details.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
TA
-40
—
+85
°C
Industrial Temperature parts
TA
-40
—
+125
°C
Extended Temperature parts
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT23
θJA
—
255
—
°C/W
Thermal Resistance, 5L-SC-70
θJA
—
450
—
°C/W
Temperature Ranges
Specified Temperature Range
Thermal Package Resistances
 2003 Microchip Technology Inc.
DS21813B-page 3
TC1017
2.0
TYPICAL PERFORMANCE CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C.
0.40
VOUT = 2.85V
0.35
Dropout Voltage (V)
Dropout Voltage (V)
0.40
TA = +125°C
0.30
TA = +25°C
0.25
TA = -40°C
0.20
0.15
0.10
0.05
0.00
VOUT = 2.85V
0.35
0.30
IOUT = 150 mA
0.25
0.20
IOUT = 100 mA
0.15
0.10
IOUT = 50 mA
0.05
0.00
0
25
50
75
100
125
150
-40
-15
10
Load Current (mA)
Dropout Voltage vs. Output
Load Regulation (%)
-0.30
VOUT = 2.85V
IOUT = 0-150 mA
-0.35
-0.40
-0.45
-0.50
VIN = 6.0V
-0.55
VIN = 3.85V
-0.60
VIN = 3.3V
-0.65
FIGURE 2-4:
Temperature.
160
-0.70
110
Dropout Voltage vs.
VOUT = 2.85V
140
120
100
80
60
40
20
-15
10
35
60
85
110
1
2
3
Temperature (°C)
FIGURE 2-2:
Temperature.
Load Regulation vs.
FIGURE 2-5:
Input Voltage.
55
TA = +125°C
53
TA = +25°C
52
51
5
6
Short-Circuit Current vs.
57
VOUT = 2.85V
56
54
4
Input Voltage (V)
Supply Current (µA)
Supply Current (µA)
85
0
-40
57
60
Temperature (°C)
Short Circuit Current (mA)
FIGURE 2-1:
Current.
35
TA = -40°C
50
VOUT = 2.85V
56
VIN = 6.0V
55
54
VIN = 3.85V
53
52
VIN = 3.3V
51
50
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
-40
-15
DS21813B-page 4
Supply Current vs. Input
35
60
85
110
Temperature (°C)
Input Voltage (V)
FIGURE 2-3:
Voltage.
10
FIGURE 2-6:
Temperature.
Supply Current vs.
 2003 Microchip Technology Inc.
TC1017
Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C.
0.40
V OUT = 3.30V
0.35
0.30
Dropout Voltage (V)
Dropout Voltage (V)
0.40
TA = +125°C
0.25
TA = +25°C
TA = -40°C
0.20
0.15
0.10
0.05
0.00
VOUT = 3.30V
0.35
IOUT = 150 mA
0.30
0.25
0.20
IOUT = 100 mA
0.15
0.10
IOUT = 50 mA
0.05
0.00
0
25
50
75
100
125
150
-40
-15
10
Load Current (mA)
Dropout Voltage vs. Output
Load Regulation (%)
-0.30
VOUT = 3.30V
IOUT = 0-150 mA
-0.35
V IN = 6.0V
-0.40
-0.45
-0.50
-0.55
V IN = 4.3V
-0.60
V IN = 4.0V
-0.65
FIGURE 2-10:
Temperature.
60
-0.70
85
110
59
Dropout Voltage vs.
VOUT = 3.30V
58
57
TA = +25°C
56
55
TA = +125°C
54
53
TA = -40°C
52
-40
-15
10
35
60
85
110
4.0
4.5
Temperature (°C)
FIGURE 2-8:
Temperature.
FIGURE 2-11:
Voltage.
2.869
VOUT = 3.30V
58
Output Voltage (V)
59
VIN = 6.0V
57
56
VIN = 4.3V
55
54
VIN = 4.0V
53
5.0
5.5
6.0
Input Voltage (V)
Load Regulation vs.
60
Supply Current (µA)
60
Temperature (°C)
Supply Current (µA)
FIGURE 2-7:
Current.
35
52
2.868
Supply Current vs. Input
VOUT = 2.85V
2.867
TA = -40°C
2.866
TA = +25°C
2.865
2.864
TA = +125°C
2.863
2.862
-40
-15
10
35
60
85
110
3.3 3.6 3.9
Temperature (°C)
FIGURE 2-9:
Temperature.
Supply Current vs.
 2003 Microchip Technology Inc.
4.2 4.5 4.8
5.1 5.4
5.7 6.0
Input Voltage (V)
FIGURE 2-12:
Voltage.
Output Voltage vs. Supply
DS21813B-page 5
TC1017
Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C.
2.870
2.866
VIN = 6.0V
2.864
2.862
2.860
VIN = 3.85V
2.858
VOUT = 2.85V
2.868
Output Voltage (V)
Output Voltage (V)
2.869
VOUT = 2.85V
2.868
2.856
2.854
VIN = 6.0V
2.867
VIN = 3.3V
2.866
2.865
VIN= 3.85V
2.864
2.863
2.862
0
25
50
75
100
125
150
-40
-15
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Output Voltage vs. Output
VOUT = 2.85V
FIGURE 2-16:
Temperature.
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
VIN = 3.85V
VOUT = 2.85V
CIN = 1 PF
COUT = 1 PF
IOUT = 40 mA
10
1
0.01
6.0
10
100
1000
PSRR (dB)
-10
-20
Shutdown Current vs. Input
FIGURE 2-17:
0
IOUT = 100 µA
COUT =1 µF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
-30
-40
-10
-20
-60
-60
1
10
100
1000
Frequency (KHz)
FIGURE 2-15:
Power Supply Rejection
Ratio vs. Frequency.
DS21813B-page 6
1000000
Output Noise vs. Frequency.
IOUT = 1 mA
COUT = 1 µF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
-40
-50
0.1
100000
-30
-50
-70
0.01
10000
Frequency (Hz)
PSRR (dB)
0
110
Output Voltage vs.
Input Voltage (V)
FIGURE 2-14:
Voltage.
85
0.1
TA = +25°C
3.3
60
100
TA = +125°C
Noise (mV/—Hz)
Shutdown Current (µA)
FIGURE 2-13:
Current.
35
Temperature (°C)
Load Current (mA)
-70
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-18:
Power Supply Rejection
Ratio vs. Frequency.
 2003 Microchip Technology Inc.
TC1017
Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C.
0
-10
PSRR (dB)
-20
IOUT = 50 mA
COUT = 1µF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
COUT
V IN = 3.85V
CIN = 10 µF
= 1 µF Ceramic
V OUT = 2.85V
-30
-40
-50
IOUT = 0.1 mA to 120 mA
-60
-70
-80
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-19:
Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-22:
Load Transient Response.
V OUT = 2.85V
COUT
COUT
V IN = 3.85V
CIN = 10 µF
= 1 µF Ceramic
Shutdow n Input
FIGURE 2-20:
Wake-Up Response.
VOUT = 2.85V
IOUT = 0.1 mA to 120 mA
FIGURE 2-23:
Load Transient Response.
CIN = 0 µF
COUT = 1.0 µF Ceramic
ILOAD = 120 mA
VOUT = 2.85V
V IN = 3.85V
CIN = 10 µF
COUT = 4.7 µF Ceramic
V IN = 3.85V
CIN = 10 µF
= 4.7 µF Ceramic
VOUT = 2.85V
VIN = 3.85V to 4.85V
Shutdow n Input
FIGURE 2-21:
Wake-Up Response.
 2003 Microchip Technology Inc.
FIGURE 2-24:
Line Transient Response.
DS21813B-page 7
TC1017
Note: Unless otherwise noted, V IN = VR + 1V, IL = 100 µA, C L = 1.0 µF, SHDN > VIH, TA = +25°C.
CIN = 0 µF
COUT = 4.7 µF Ceramic
ILOA D = 120 mA
V IN = 4.3V to 5.3V
CIN = 0 µF
COUT = 10 µF Ceramic
ILOAD = 100 µA
V OUT = 2.85V
V IN = 3.85V to 4.85V
V OUT = 3.33V
FIGURE 2-25:
Line Transient Response.
V IN = 4.3V to 5.3V
FIGURE 2-27:
Line Transient Response.
CIN = 0 µF
COUT = 1 µF Ceramic
ILOAD = 100 µA
V OUT = 3.33V
FIGURE 2-26:
DS21813B-page 8
Line Transient Response.
 2003 Microchip Technology Inc.
TC1017
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SC-70)
Pin No.
(5-Pin SOT-23)
Symbol
1
3
SHDN
2
4
NC
3
2
GND
Ground Terminal
4
5
VOUT
Regulated Voltage Output
5
1
VIN
Unregulated Supply Input
3.1
Shutdown Control Input (SHDN)
Description
Shutdown Control Input
No Connect
3.3
Regulated Voltage Output (VOUT)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown,
output voltage falls to zero, and supply current is
reduced to 0.05 µA (typ.)
Bypass the regulated voltage output to GND with a
minimum capacitance of 1 µF. A ceramic bypass
capacitor is recommended for best performance.
3.2
The minimum VIN has to meet two conditions in order
to ensure that the output maintains regulation:
VIN ≥ 2.7V and V IN ≥ [(VR + 2.5%) + VDROPOUT]. The
maximum VIN should be less than or equal to 6V.
Power dissipation may limit VIN to a lower potential in
order to maintain a junction temperature below 125°C.
Refer to Section 5.0, “Thermal Considerations”, for
determining junction temperature.
Ground Terminal
For best performance, it is recommended that the
ground pin be tied to a ground plane.
3.4
Unregulated Supply Input (VIN)
It is recommended that VIN be bypassed to GND with a
ceramic capacitor.
 2003 Microchip Technology Inc.
DS21813B-page 9
TC1017
4.0
DETAILED DESCRIPTION
P-Channel is turned on. If the internal power dissipation
is still high enough for the junction to rise to 160°C, it
will again shut off and cool. The maximum operating
junction temperature of the device is 125°C. Steadystate operation at or near the 160°C overtemperature
point can lead to permanent damage of the device.
The TC1017 is a precision, fixed-output, linear voltage
regulator. The internal linear pass element is a
P-Channel MOSFET. As with all P-Channel CMOS
LDOs, there is a body drain diode with the cathode
connected to VIN and the anode connected to VOUT
(Figure 4-1).
The output voltage VOUT remains stable over the entire
input operating voltage range (2.7V to 6.0V) and the
entire load range (0 mA to 150 mA). The output voltage
is sensed through an internal resistor divider and
compared with a precision internal voltage reference.
Several fixed-output voltages are available by
changing the value of the internal resistor divider.
As is shown in Figure 4-1, the output voltage of the
LDO is sensed and divided down internally to reduce
external component count. The internal error amplifier
has a fixed bandgap reference on the inverting input
and the sensed output voltage on the non-inverting
input. The error amplifier output will pull the gate
voltage down until the inputs of the error amplifier are
equal to regulate the output voltage.
Figure 4-2 shows a typical application circuit. The
regulator is enabled any time the shutdown input pin is
at or above VIH. It is shut down (disabled) any time the
shutdown input pin is below VIL. For applications where
the SHDN feature is not used, tie the SHDN pin directly
to the input supply voltage source. While in shutdown,
the supply current decreases to 0.006 µA (typical) and
the P-Channel MOSFET is turned off.
By sensing the current in the P-Channel MOSFET, the
maximum current delivered to the load is limited to a
typical average value of 120 mA, preventing excessive
current from damaging the printed circuit board in the
event of a shorted or faulted load.
An internal thermal sensing device is used to monitor
the junction temperature of the LDO. When the sensed
temperature is over the set threshold of 160°C (typical),
the P-Channel MOSFET is turned off. When the
P-Channel is off, the power dissipation internal to the
device is almost zero. The device cools until the
junction temperature is approximately 150°C and the
As shown in Figure 4-2, batteries have internal source
impedance. An input capacitor is used to lower the
input impedance of the LDO. In some applications, high
input impedance can cause the LDO to become
unstable. Adding more input capacitance can
compensate for this.
1 SHDN
2 NC
VIN
SHDN VREF
Control
EA
+
Body
Diode
Error
Amp
3 GND
Over
Temp.
FIGURE 4-1:
VIN 5
Current Limit
VOUT 4
R1 R2
Feedback Resistors
TC1017 Block Diagram.
BATTERY
1 SHDN
RSOURCE
VIN 5
TC1017
CIN
3 GND
VOUT 4
Load
COUT
FIGURE 4-2:
DS21813B-page 10
1 µF Ceramic
2 NC
1 µF Ceramic
Typical Application Circuit.
 2003 Microchip Technology Inc.
TC1017
4.1
Input Capacitor
4.3
Low input source impedance is necessary for the LDO
to operate properly. When operating from batteries, or
in applications with long lead length (> 10") between
the input source and the LDO, some input capacitance
is required. A minimum of 0.1 µF is recommended for
most applications and the capacitor should be placed
as close to the input of the LDO as is practical. Larger
input capacitors will help reduce the input impedance
and further reduce any high-frequency noise on the
input and output of the LDO.
4.2
Output Capacitor
A minimum output capacitance of 1 µF for the TC1017
is required for stability. The equivalent series resistance (ESR) requirements on the output capacitor are
between 0 and 2 ohms. The output capacitor should be
located as close to the LDO output as is practical.
Ceramic materials X7R and X5R have low temperature
coefficients and are well within the acceptable ESR
range required. A typical 1 µF X5R 0805 capacitor has
an ESR of 50 milli-ohms. Larger output capacitors can
be used with the TC1017 to improve dynamic behavior
and input ripple-rejection performance.
Ceramic, aluminum electrolytic or tantalum capacitor
types can be used. Since many aluminum electrolytic
capacitors freeze at approximately –30°C, ceramic or
solid tantalums are recommended for applications
operating below –25°C. When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
Turn-On Response
The turn-on response is defined as two separate
response categories, wake-up time (tWK) and settling
time (tS).
The TC1017 has a fast wake-up time (10 µsec, typical)
when released from shutdown. See Figure 4-3 for the
wake-up time designated as tWK. The wake-up time is
defined as the time it takes for the output to rise to 2%
of the VOUT value after being released from shutdown.
The total turn-on response is defined as the settling
time (tS) (see Figure 4-3). Settling time (inclusive with
tWK) is defined as the condition when the output is
within 98% of its fully-enabled value (32 µsec, typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
output capacitance on VOUT (RC response).
The table below demonstrates the typical turn-on
response timing for different input voltage power-up
frequencies: VOUT = 2.85V, VIN = 5.0V, IOUT = 60 mA
and COUT = 1 µF.
Frequency
Typical (tWK)
Typical (tS)
1000 Hz
5.3 µsec
14 µsec
500 Hz
5.9 µsec
16 µsec
100 Hz
9.8 µsec
32 µsec
50 Hz
14.5 µsec
52 µsec
10 Hz
17.2 µsec
77 µsec
VIH
VIL
SHDN
tS
98%
2%
VOUT
tWK
FIGURE 4-3:
Wake-Up Time from Shutdown.
 2003 Microchip Technology Inc.
DS21813B-page 11
TC1017
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
Given the following example:
VOUT
=
2.85V ±2.5%
ILOAD
=
120 mA (output current)
TA
=
55°C (max. desired ambient)
P DMAX = ( V IN_MAX – V OUT_MIN ) × I LOAD
= ( 4.1V – 2.85 × ( 0.975 ) ) × 120mA
= 158.5mW
2.
Maximum allowable ambient temperature:
× R θJ A
T A_MAX = T J_MAX – P
DM AX
= ( 125 ° C – 158.5mW × 450 ° C/W )
= ( 125 ° C – 71 ° C )
= 54 ° C
3.
Maximum allowable
desired ambient:
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
P D = ( V IN – V OUT ) × ILOAD + V IN × I G ND
The VIN x IGND term is typically very small when
compared to the (VIN-VOUT) x ILOAD term, simplifying
the power dissipation within the LDO to be:
EQUATION:
P D = ( V IN – V OU T ) × I LO AD
To determine the maximum power
capability, the following equation is used:
dissipation
EQUATION:
( T J_MAX – T A_MAX )
P DMAX = ---------------------------------------------R θ JA
Where:
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
RθJA
= the thermal resistance from
junction to air
power
dissipation
at
T J_MAX – T A
P D = ----------------------------R θ JA
125 ° C – 55 ° C
= ----------------------------------450 ° C/W
= 155mW
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised 71°C
over the ambient. The absolute maximum power
dissipation is 155 mW when given a maximum ambient
temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-1 and Figure 5-2 depict typical maximum
power dissipation versus ambient temperature and
typical maximum current versus ambient temperature,
with a one volt input voltage to output voltage
differential, respectively.
400
Power Dissipation (mW)
EQUATION:
3.0V to 4.1V
Internal power dissipation:
Power Dissipation: SC-70
The TC1017 is available in the SC-70 package. The
thermal resistance for the SC-70 package is
approximately 450°C/W when the copper area used in
the printed circuit board layout is similar to the
JEDEC J51-7 high thermal conductivity standard or
semi-G42-88 standard. For applications with larger or
thicker copper area, the thermal resistance can be
lowered. See AN792, “A Method to Determine How
Much Power a SOT-23 Can Dissipate in an
Application”, DS00792, for a method to determine the
thermal resistance for a particular application.
=
Find:
1.
5.2
VIN
350
300
250
200
150
100
50
0
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
FIGURE 5-1:
Power Dissipation vs.
Ambient Temperature (SC-70 package).
DS21813B-page 12
 2003 Microchip Technology Inc.
TC1017
EQUATION:
Maximum Current (mA)
160
( T J_MAX – T A_MAX )
P D MAX = ------------------------------------------------Rθ J A
VIN - VOUT = 1V
140
120
Where:
100
TJ_MAX = the maximum junction
temperature allowed
80
60
TA_MAX = the maximum ambient
temperature
40
20
0
-40
-15
10
35
60
85
RθJA
110
= the thermal resistance from
junction to air
Ambient Temperature (°C)
FIGURE 5-2:
Maximum Current vs.
Ambient Temperature (SC-70 package).
5.3
Given the following example:
Power Dissipation: SOT-23
The TC1017 is also available in a SOT-23 package for
improved thermal performance. The thermal resistance
for the SOT-23 package is approximately 255°C/W
when the copper area used in the printed circuit board
layout is similar to the JEDEC J51-7 low thermal
conductivity standard or semi-G42-88 standard. For
applications with larger or thicker copper area, the
thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application”, DS00792, for a method to
determine the thermal resistance for a particular
application.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION:
P D = ( V IN – V O UT ) × I LOAD + V IN × IGND
The VIN x IGND term is typically very small when
compared to the (VIN-VOUT) x ILOAD term, simplifying the
power dissipation within the LDO to be:
EQUATION:
P D = ( V IN – V OU T ) × I LO AD
To determine the maximum power
capability, the following equation is used:
dissipation
VIN =
3.0V to 4.1V
VOUT =
2.85V ±2.5%
ILOAD =
120 mA (output current)
TA =
+85°C (max. desired ambient)
Find:
1.
Internal power dissipation:
P DMA X = ( V IN_MAX – V OUT_MIN ) × I LOAD
= ( 4.1V – 2.85 × ( 0.975 ) ) × 120mA
= 158.5mW
2.
Maximum allowable ambient temperature:
T A_MAX = T J_MAX – P DMAX × R θ JA
= ( 125 ° C – 158.5mW × 255 ° C/W )
= ( 125 ° C – 40.5 ° C )
= 84.5 ° C
3.
Maximum allowable
desired ambient:
power
dissipation
at
T J_MAX – T A
P D = ----------------------------R θ JA
125 ° C – 85 ° C= ---------------------------------255 ° C/W
= 157mW
In this example, the TC1017 dissipates approximately
158.5 mWatts and the junction temperature is raised
40.5°C over the ambient. The absolute maximum
power dissipation is 157 mW when given a maximum
ambient temperature of +85°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-3 and Figure 5-4 depict typical maximum
power dissipation versus ambient temperature and
typical maximum current versus ambient temperature
with a one volt input voltage to output voltage
differential, respectively.
 2003 Microchip Technology Inc.
DS21813B-page 13
TC1017
5.4
Power Dissipation (mW)
700
Layout Considerations
The primary path for heat conduction out of the SC-70
or SOT-23 package is through the package leads.
Using heavy wide traces at the pads of the device will
facilitate the removal of the heat within the package,
thus lowering the thermal resistance RθJA. By lowering
the thermal resistance, the maximum internal power
dissipation capability of the package is increased.
600
500
400
300
200
100
0
-40
-15
10
35
60
85
SHDN
110
Ambient Temperature (°C)
VIN
FIGURE 5-3:
Power Dissipation vs.
Ambient Temperature (SOT-23 Package).
U1
VOUT
C2
C1
Maximum Current (mA)
160
140
120
GND
VIN - VOUT = 1V
100
FIGURE 5-5:
Layout.
80
60
SC-70 Package Suggested
40
20
0
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
FIGURE 5-4:
Maximum Current vs.
Ambient Temperature (SOT-23 Package).
DS21813B-page 14
 2003 Microchip Technology Inc.
TC1017
6.0
PACKAGE INFORMATION
6.1
Package Marking Information
5-Pin SC-70
X
X
N
Y
W
BOTTOMSIDE
TOPSIDE
5-Lead SOT-23
DANN
Legend: XX...X
Y
YY
WW
NNN
Note:
*
W
Part Number
Code
TC1017 - 1.8VLT
CE
TC1017 - 2.6VLT
CF
TC1017 - 2.7VLT
CG
TC1017 - 2.8VLT
CH
TC1017 - 2.85VLT
CJ
TC1017 - 2.9VLT
CK
TC1017 - 3.0VLT
CL
TC1017 - 3.3VLT
CM
TC1017 - 4.0VLT
CP
Part Number
Code
TC1017 - 1.8VCT
DA
TC1017 - 2.6VCT
DB
TC1017 - 2.7VCT
DC
TC1017 - 2.8VCT
DD
TC1017 - 2.85VCT
DE
TC1017 - 2.9VCT
DF
TC1017 - 3.0VCT
DG
TC1017 - 3.3VCT
DH
TC1017 - 4.0VCT
DJ
Customer specific information*
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
 2003 Microchip Technology Inc.
DS21813B-page 15
TC1017
5-Lead Plastic Small Outline Transistor (LT) (SC-70)
E
E1
D
p
B
n
1
Q1
A2
c
A
A1
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff
Overall Width
Molded Package Width
Overall Length
Foot Length
Top of Molded Pkg to Lead Shoulder
Lead Thickness
Lead Width
A
A2
A1
E
E1
D
L
Q1
c
B
MIN
.031
.031
.000
.071
.045
.071
.004
.004
.004
.006
INCHES
NOM
5
.026 (BSC)
MAX
.043
.039
.004
.094
.053
.087
.012
.016
.007
.012
MILLIMETERS*
NOM
5
0.65 (BSC)
0.80
0.80
0.00
1.80
1.15
1.80
0.10
0.10
0.10
0.15
MIN
MAX
1.10
1.00
0.10
2.40
1.35
2.20
0.30
0.40
0.18
0.30
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .005" (0.127mm) per side.
JEITA (EIAJ) Standard: SC-70
Drawing No. C04-061
DS21813B-page 16
 2003 Microchip Technology Inc.
TC1017
5-Lead Plastic Small Outline Transistor (OT) (SOT-23)
E
E1
p
B
p1
n
D
1
α
c
A
Units
Dimension Limits
n
Number of Pins
p
Pitch
p1
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
φ
L
β
A
A2
A1
E
E1
D
L
φ
c
B
α
β
MIN
.035
.035
.000
.102
.059
.110
.014
0
.004
.014
0
0
A2
A1
INCHES*
NOM
5
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
.006
.017
5
5
MAX
.057
.051
.006
.118
.069
.122
.022
10
.008
.020
10
10
MILLIMETERS
NOM
5
0.95
1.90
0.90
1.18
0.90
1.10
0.00
0.08
2.60
2.80
1.50
1.63
2.80
2.95
0.35
0.45
0
5
0.09
0.15
0.35
0.43
0
5
0
5
MIN
MAX
1.45
1.30
0.15
3.00
1.75
3.10
0.55
10
0.20
0.50
10
10
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
 2003 Microchip Technology Inc.
DS21813B-page 17
TC1017
NOTES:
DS21813B-page 18
 2003 Microchip Technology Inc.
TC1017
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
X
Device
Voltage
Range
Temperature
Range
Examples:
a)
b)
Device:
TC1017: 150 mA Tiny CMOS LDO with Shutdown
Voltage Range:
SC-70 Package
CE = 1.8V
CF = 2.6V
CG = 2.7V
CH = 2.8V
CJ = 2.85V
CK = 2.9V
CL = 3.0V
CM = 3.3V
CP = 4.0V
SOT-23 Package
DA = 1.8V
DB = 2.6V
DC = 2.7V
DD = 2.8V
DE = 2.85V
DF = 2.9V
DG = 3.0V
DH = 3.3V
DJ = 4.0V
Temperature
Range:
V
= -40°C to +125°C
Package:
LTTR = 5-pin SC-70 (Tape and Reel)
CTTR = 5-pin SOT-23 (Tape and Reel)
c)
d)
e)
f)
g)
h)
i)
TC1017-1.8VLTTR:
150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
TC1017-2.6VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
TC1017-2.7VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
TC1017-2.8VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
TC1017-2.85VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
TC1017-2.9VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
TC1017-3.0VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
TC1017-3.3VCTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SOT-23 package.
TC1017-4.0VLTTR: 150 mA, Tiny CMOS
LDO with Shutdown,
SC-70 package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2003 Microchip Technology Inc.
DS21813B-page 19
TC1017
NOTES:
DS21813B-page 20
 2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE and PowerSmart are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER,
SEEVAL and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Application Maestro, dsPICDEM, dsPICDEM.net, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21813B-page 21
 2003 Microchip Technology Inc.
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100
Fax: 86-10-85282104
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Tel: 770-640-0034
Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848
Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, IN 46902
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
China - Beijing
China - Chengdu
Rm. 2401-2402, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200
Fax: 86-28-86766599
China - Fuzhou
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506
Fax: 86-591-7503521
China - Hong Kong SAR
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
China - Shanghai
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700
Fax: 86-21-6275-5060
China - Shenzhen
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888
Fax: 949-263-1338
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: 86-755-82901380
Fax: 86-755-8295-1393
Phoenix
China - Shunde
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966
Fax: 480-792-4338
Room 401, Hongjian Building
No. 2 Fengxiangnan Road, Ronggui Town
Shunde City, Guangdong 528303, China
Tel: 86-765-8395507 Fax: 86-765-8395571
San Jose
China - Qingdao
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950
Fax: 408-436-7955
Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Tel: 86-532-5027355 Fax: 86-532-5027205
Toronto
India
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699
Fax: 905-673-6509
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
DS21813B-page 22
Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5932 or
82-2-558-5934
Singapore
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Kaohsiung Branch
30F - 1 No. 8
Min Chuan 2nd Road
Kaohsiung 806, Taiwan
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45-4420-9895 Fax: 45-4420-9910
France
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy
Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands
P. A. De Biesbosch 14
NL-5152 SC Drunen, Netherlands
Tel: 31-416-690399
Fax: 31-416-690340
United Kingdom
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44-118-921-5869
Fax: 44-118-921-5820
07/28/03
 2003 Microchip Technology Inc.