MICROCHIP TC2014

M
TC2014/2015/2185
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
Features
General Description
•
•
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•
•
•
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar low dropout regulators, such as the LP2980. Total supply current is typically 55 µA; 20 to 60 times lower than in
bipolar regulators.
•
•
•
•
•
Low Supply Current: 80 µA (Max)
Low Dropout Voltage: 140 mV (Typ) @ 150 mA
High Output Voltage Accuracy: ±0.4% (Typ)
Standard or Custom Output Voltages
Power-Saving Shutdown Mode
Reference Bypass Input for Ultra Low-Noise
Operation
Fast Shutdown Response Time: 60 µsec (Typ)
Over-Current Protection
Space-Saving 5-Pin SOT-23A Package
Pin Compatible Upgrades for Bipolar Regulators
Wide Operating Temperature Range:
-40°C to +125°C
Applications
•
•
•
•
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Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular / GSM / PHS Phones
Linear Post-Regulator for SMPS
Pagers
The key features of the device include low noise operation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and VOUT falls to zero when
the shutdown input is low. The devices also incorporate
over-current protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (IOUT = 300 mA) datasheets.
Related Literature
• Application Notes: AN765, AN766, AN776 and
AN792
Typical Application
Package Type
5-Pin SOT-23A
VOUT
Bypass
5
4
+
TC2014
TC2015
TC2185
1
VIN
2
1
VIN
VOUT
VIN
5
1 µF
2
VOUT
+
GND
1 µF
TC2014
TC2015
TC2185
3
GND SHDN
3
SHDN
Bypass
4
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
 2003 Microchip Technology Inc.
DS21662C-page 1
TC2014/2015/2185
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Function
Absolute Maximum Ratings †
VIN
Unregulated Supply Input
Input Voltage ................................................................... 6.5V
GND
Ground Terminal
Output Voltage ....................................... (– 0.3) to (VIN + 0.3)
SHDN
Shutdown Control Input
Operating Temperature ......................... – 40°C < TJ < 125°C
Bypass
Reference Bypass Input
Storage Temperature ................................. – 65°C to +150°C
VOUT
Regulated Voltage Output
Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Input Operating Voltage
VIN
2.7
—
6.0
V
50
—
—
mA
100
—
—
Maximum Output
Current
Output Voltage
VOUT Temperature
Coefficient
IOUTMAX
Conditions
Note 1
TC2014
TC2015
150
—
—
VOUT
VR - 2.0%
VR ± 0.4%
VR + 2.0%
V
Note 2
TC2185
TCVOUT
—
20
—
ppm/°C
Note 3
—
40
—
Line Regulation
∆VOUT/∆VIN
—
0.05
0.5
%
(VR + 1V) < VIN < 6V
Load Regulation
(Note 4)
∆VOUT /VOUT
-1.0
0.33
+1.0
%
TC2014;TC2015: IL = 0.1 mA to IOUTMAX
-2.0
0.43
+2.0
Dropout Voltage
V IN - VOUT
—
2
—
—
45
70
—
90
140
Supply Current
Shutdown Supply
Current
TC2185: IL = 0.1 mA to IOUTMAX Note 4
mV
Note 5
IL = 100 µA
IL = 50 mA
TC2015; TC2185 IL = 100 mA
IL = 150 mA
—
140
210
IIN
—
55
80
µA
SHDN = VIH , IL=0
TC2185
IINSD
—
0.05
0.5
µA
SHDN = 0V
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
–6
( V OUTMAX – V OUTMIN ) × 10
TCVOUT = ---------------------------------------------------------------------------V OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN .
DS21662C-page 2
 2003 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, V IN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Sym
Min
Typ
Max
Units
Power Supply
Rejection Ratio
Parameters
PSRR
—
55
—
dB
F ≤ 1 kHz, Cbypass=0.01 µF
Conditions
Output Short Circuit
Current
IOUTSC
—
160
300
mA
VOUT = 0V
Thermal Regulation
Note 6, Note 7
∆VOUT/∆PD
—
0.04
—
V/W
Output Noise
eN
—
200
—
nV/√Hz
Response Time,
(Note 8)
(from Shutdown Mode)
TR
—
60
—
µsec
VIN = 4V, IL = 30 mA,
CIN = 1 µF, COUT = 10 µF
SHDN Input High
Threshold
VIH
60
—
—
%V IN
VIN = 2.5V to 6.0V
SHDN Input Low
Threshold
VIL
—
—
15
%V IN
VIN = 2.5V to 6.0V
IL = IOUTMAX, F = 10 kHz
470 pF from Bypass to GND
SHDN Input
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
–6
( V OUTMAX – V OUTMIN ) × 10
TCVOUT = ---------------------------------------------------------------------------V OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN .
 2003 Microchip Technology Inc.
DS21662C-page 3
TC2014/2015/2185
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
63.0
1.820
VR = 1.8V
COUT = 3.3 µF
V IN = 6.0V
Output Voltage (V)
57.0
V IN = 2.8V
54.0
51.0
48.0
45.0
VIN = 2.8V
1.815
VIN = 6.0V
1.810
1.805
1.800
1.795
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
1.790
Junction Temperature (°C)
FIGURE 2-1:
Temperature.
Supply Current vs. Junction
125
110
95
80
65
50
35
FIGURE 2-4:
Output Voltage vs. Junction
Temperature (150 mA).
1.82
TA = -45°C
0.6
Output Voltage (V)
TA = +25°C
0.4
0.2
0
TA = +125°C
-0.2
-0.4
V R = 1.8V
COUT = 3.3 µF
IL = 150 mA
-0.6
1.815
TA = +25°C
1.81
TA = -45°C
1.805
TA = +125°C
1.8
1.795
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
1.79
-0.8
1.785
5.2
5.6
2.8
6
3.2
3.6
4
125
110
95
80
65
50
35
20
5
-10
1.790
-25
5.6
6
Junction Temperature (°C)
FIGURE 2-3:
Output Voltage vs. Junction
Temperature (0.1 mA).
IL = 150 mA
IL = 100 mA
IL = 50 mA
IL = 20 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
VIN(min) ! 2.7V
125
1.795
-40
5.2
VR = 1.8V
COUT = 3.3 µF
5
VIN = 6.0V
1.800
DS21662C-page 4
4.8
Output Voltage vs. Supply
-10
V IN = 2.8V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-25
1.805
VR = 1.8V
COUT = 3.3 µF
IL = 0.1 mA
FIGURE 2-5:
Voltage.
-40
1.810
Load Regulation vs. Supply
Dropout Voltage (V)
FIGURE 2-2:
Voltage.
4.4
Supply Voltage (V)
Supply Voltage (V)
110
4.8
95
4.4
80
4
65
3.6
50
3.2
35
2.8
20
Load Regulation (%)
5
Junction Temperature (°C)
0.8
Output Voltage (V)
20
-10
-40
125
110
95
80
65
50
35
20
5
-10
-25
-40
1.785
-25
IDD (µA)
60.0
Junction Temperature (°C)
FIGURE 2-6:
Dropout Voltage vs.
Junction Temperature.
 2003 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
2.705
2.680
Temperature (°C)
FIGURE 2-7:
Temperature.
Supply Current vs. Junction
125
FIGURE 2-10:
Output Voltage vs. Junction
Temperature (150 mA).
2.705
TA = -45°C
0.3
TA = +25°C
0.1
-0.1
TA = +125°C
V R = 2.7V
COUT = 3.3 µF
IL = 150 mA
-0.3
TA = +25°C
2.7
Output Voltage (V)
2.695
2.69
2.68
2.675
2.67
-0.5
TA = -45°C
2.685
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
TA = +125°C
2.665
3.7
4
4.3
4.6
4.9
5.2
5.5
5.8
3.7
4
4.3
Supply Voltage (V)
FIGURE 2-8:
Voltage.
Load Regulation vs. Supply
FIGURE 2-11:
Voltage.
0.160
Dropout Voltage (V)
VIN = 6.0V
VIN = 3.7V
VR = 2.7V
COUT = 3.3 µF
IL = 0.1 mA
4.9
5.2
5.5
5.8
Output Voltage vs. Supply
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
0.120
IL = 100 mA
0.080
IL = 50 mA
0.040
IL = 20 mA
Junction Temperature (°C)
FIGURE 2-9:
Output Voltage vs. Junction
Temperature (0.1 mA).
 2003 Microchip Technology Inc.
125
95
110
80
65
50
35
5
-10
-25
-40
125
95
110
80
65
50
35
20
5
-10
-25
0.000
-40
2.690
2.688
2.686
2.684
2.682
2.680
2.678
2.676
2.674
2.672
2.670
4.6
Supply Voltage (V)
20
Load Regulation (%)
95
Junction Temperature (°C)
0.5
Output Voltage (V)
110
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
-40
125
95
110
80
65
50
35
5
-10
20
2.665
-25
44.0
-40
2.670
80
2.675
46.0
65
48.0
2.685
35
50.0
VIN = 6.0V
2.690
20
VIN = 2.8V
52.0
2.695
5
54.0
-10
Output Voltage (V)
56.0
IDD(µA)
VIN = 3.7V
2.700
VIN = 6.0V
50
VR = 2.7V
COUT = 3.3 µF
58.0
-25
60.0
Junction Temperature (°C)
FIGURE 2-12:
Dropout Voltage vs.
Junction Temperature.
DS21662C-page 5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
0.12
60
54
51
48
V R = 5.0V
COUT = 3.3 µF
VR = 5.0V
COUT = 3.3 µF
IL = 150 mA
0.08
IL = 100 mA
0.06
0.04
IL = 50 mA
0.02
Junction Temperature (°C)
FIGURE 2-13:
Temperature.
Supply Current vs. Junction
Output Voltage (V)
125
110
95
VIN = 3.8V
VOUT = 2.8V
CIN = 1 µF Ceramic
COUT = 1 µF Ceramic
Frequency = 1 kHz
4.99
4.98
100mV/DIV
IL = 100 mA
80
FIGURE 2-16:
Dropout Voltage vs.
Junction Temperature.
IL = 150 mA
4.97
65
Junction Temperature (°C)
5.01
5.00
50
35
20
5
-10
-25
125
110
95
80
65
50
35
20
5
-10
-25
0.00
-40
45
0.10
-40
IDD (µA)
Dropout Voltage (V)
VIN = 6.0V
57
VOUT
IL = 0.1 mA
4.96
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
4.95
4.94
Load Current
150mA
Load
100mA
125
110
95
80
65
50
35
20
5
-10
-25
-40
4.93
Junction Temperature (°C)
FIGURE 2-14:
Output Voltage vs. Junction
Temperature (150 mA).
Load Regulation (%)
0.40
0.20
0.10
100mV / DIV
-0.10
-0.30
VOUT
IL = 100 mA
0.00
-0.20
Load Transient Response.
VIN = 3.0V
VOUT = 2.8V
CIN = 1 µF Ceramic
COUT = 10 µF Ceramic
Frequency = 10 kHz
IL = 150 mA
0.30
FIGURE 2-17:
(COUT = 1 µF).
IL = 50 mA
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0 V
Load Current
150mA
Load
100mA
125
110
95
80
65
50
35
20
5
-10
-25
-40
-0.40
Junction Temperature (°C)
FIGURE 2-15:
Load Regulation vs.
Junction Temperature.
DS21662C-page 6
FIGURE 2-18:
(COUT = 10 µF).
Load Transient Response.
 2003 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
Line Transient Response.
VOUT
100mV/DIV
150mA
100mA
VIN = 3.105V
VOUT = 3.006V
CIN = 1 µF Ceramic
COUT = 10 µF Ceramic
RLOAD = 20 Ω
FIGURE 2-22:
Power Supply Ripple Rejection
(dB)
FIGURE 2-19:
(COUT = 1 µF).
0
-10
-20
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
-30
-40
COUT = 1µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 150 mA
IOUT = 100 mA
-50
-60
IOUT = 50 mA
-70
10
100
1k
1000
10k
100k 100000
1M
10000
100000
0
Frequency (Hz)
FIGURE 2-23:
PSRR vs. Frequency
(COUT = 1 µF Ceramic).
Power Supply Ripple Rejection
(dB)
FIGURE 2-20:
Load Transient Response in
Dropout. (C OUT = 10 µF).
Wake-Up Response.
0
-10
-20
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
-30
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
IOUT = 150 mA
-40
IOUT = 100 mA
-50
-60
-70
10
10
100
1k
1000
10k
100k 100000
1M
10000
100000
0
Frequency (Hz)
FIGURE 2-21:
Shutdown Delay Time.
 2003 Microchip Technology Inc.
FIGURE 2-24:
PSRR vs. Frequency
(COUT = 10 µF Ceramic).
DS21662C-page 7
TC2014/2015/2185
0
-10
-20
-30
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
CBYPASS = 0 µF
-40
-50
CBYPASS = 0.01 µF
-60
10
10.000
COUT = 10 µF Tantalum
I OUT = 150 mA
Noise (mV/—Hz)
Power Supply Ripple Rejection
(dB)
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
VIN = 4.0V
VOUTDC = 3.0V
IOUT = 100 µA
CBYPASS = 470 pF
1.0001
0.1
0.100
COUT = 1 µF
COUT = 10 µF
0.10
0.010
-70
10
10
100
100
1k
1000
10k
100k 100000
1M
10000
100000
0
0.001
10
Frequency (Hz)
FIGURE 2-25:
PSRR vs. Frequency
(COUT = 10 µF Tantalum).
DS21662C-page 8
FIGURE 2-26:
100
100
1k
1000
10k 100000
100k 100000
1M
10000
0
Frequency (Hz)
Output Noise vs. Frequency.
 2003 Microchip Technology Inc.
TC2014/2015/2185
3.0
PIN DESCRIPTIONS
The descriptions of the pins are described in Table 3-1.
TABLE 3-1:
Pin No.
PIN FUNCTION TABLE
Symbol
Description
1
VIN
2
GND
3
SHDN
Shutdown control input
4
Bypass
Reference bypass input
5
VOUT
3.1
Unregulated supply input
Ground terminal
Regulated voltage output
Unregulated Supply Input (VIN)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator some input capacitance is necessary for proper operation. A 1 µF capacitor connected
from VIN to ground is recommended for most
applications.
3.2
Ground Terminal (GND)
3.3
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic high is
applied to SHDN. The regulator enters shutdown when
a logic low is applied to this input. During shutdown,
output voltage falls to zero and supply current is
reduced to 0.5 µA (max).
3.4
Reference Bypass Input (Bypass)
Connecting a low value ceramic capacitor to this pin
will further reduce output voltage noise and improve the
Power Supply Ripple Rejection (PSRR) performance
of the LDO. Typical values from 470 pF to 0.01 µF are
suggested. Smaller and larger values can be used but
do affect the speed at which the LDO output voltage
rises when input power is applied. The larger the
bypass capacitor, the slower the output voltage will
rise.
3.5
Regulated Voltage Output (VOUT)
Connect the output load to VOUT of the LDO. Also connect one side of the LDO output de coupling capacitor
as close as possible to the VOUT pin.
Connect the unregulated input supply ground return to
GND. Also connect one side of the 1 µF typical input
decoupling capacitor close to this pin and one side of
the output capacitor COUT to this pin.
 2003 Microchip Technology Inc.
DS21662C-page 9
TC2014/2015/2185
4.0
DETAILED DESCRIPTION
4.1
Bypass Input
The TC2014, TC2015 and TC2185 are precision fixed
output voltage regulators (If an adjustable version is
needed, see the TC1070, TC1071 or TC1187
(DS21353) datasheet.) Unlike bipolar regulators, the
TC2014, TC2015 and TC2185 supply current does not
increase with load current. In addition, the LDO output
voltage is stable using 1 µF of ceramic or tantalum
capacitance over the entire specified input voltage
range and output current range.
A 0.01 µF ceramic capacitor connected from the
Bypass input to ground reduces noise present on the
internal reference, which in turn significantly reduces
output noise. If output noise is not a concern, this input
may be left unconnected. Larger capacitor values may
be used, but the result is a longer time period to rated
output voltage when power is initially applied.
Figure 4-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN)
is at or above VIH, and disabled (shutdown) when
SHDN is at or below VIL. SHDN may be controlled by a
CMOS logic gate or I/O port of a microcontroller. If the
SHDN input is not required, it should be connected
directly to the input supply. While in shutdown, supply
current decreases to 0.05 µA (typical) and VOUT falls to
zero volts.
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an esr (effective
series resistance) of 0.01Ω to 5Ω for VOUT ≥ 2.5V, and
0.05Ω. to 5Ω for VOUT < 2.5V. Ceramic, tantalum or aluminum electrolytic capacitors can be used. When using
ceramic capacitors, X5R and X7R dielectric material
are recommended due to their stable tolerance over
temperature. However, other dielectrics can be used as
long as the minimum output capacitance is maintained.
4.2
4.3
1
+
VOUT
VIN
5
+
1 µF
Battery
VOUT
+
2
3
GND
1 µF
TC2014
TC2015
TC2185
SHDN
Bypass
4
Output Capacitor
Input Capacitor
A 1 µF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used
as the power source. Aluminum, electrolytic or tantalum capacitors can be used (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalum are recommended for applications operating below -25°C). When operating from sources other
than batteries, supply-noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
FIGURE 4-1:
DS21662C-page 10
Typical Application Circuit.
 2003 Microchip Technology Inc.
TC2014/2015/2185
5.0
THERMAL CONSIDERATIONS
5.1
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and
output current.
The PD equation can be used in conjunction with the
PDMAX equation to ensure regulator thermal operation
is within limits. For example:
Given:
The following equation is used to calculate worst-case
power dissipation:
D
= 3.0V +10%
VOUTMIN
= 2.7V – 2.5%
ILOADMAX = 40 mA
EQUATION
P
VINMAX
TJMAX
= +125°C
TAMAX
= +55°C
≈ ( V INMAX – V OU TMIN )I LMAX
Find:
Where:
1. Actual power dissipation
PD
= Worst-case actual power dissipation
VINMAX
= Maximum voltage on VIN
VOUTMIN
= Minimum regulator output voltage
ILMAX
= Maximum output (load) current
The maximum allowable power dissipation (PDMAX) is
a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) (+125°C) and the thermal resistance from junction-to-air (θJA). The 5-Pin SOT-23A package has a θJA
of approximately 220°C/Watt when mounted on a
typical two layer FR4 dielectric copper clad PC board.
2. Maximum allowable dissipation
Actual power dissipation:
P D = ( V INMAX – V OU TMIN )I LMAX
–3
[ ( 3.0 × 1.1 ) – ( 2.7 × 0.975 ) ]40 × 10
= -------------------------------------------------------------------------------------------220
= 26.7mW
Maximum allowable power dissipation:
T JMAX – T AMAX
P DMAX = --------------------------------------θ JA
EQUATION
T JMAX – T AMAX
P DMAX = --------------------------------------θ JA
125 – 55
= --------------------220
= 318mW
Where all terms are previously defined.
In this example, the TC2014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW.
In a similar manner, the P D equation and PDMAX equation can be used to calculate maximum current and/or
input voltage limits.
5.2
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θJA and, therefore,
increase the maximum allowable power dissipation
limit.
 2003 Microchip Technology Inc.
DS21662C-page 11
TC2014/2015/2185
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
cdef
c & d represents part number code + temperature
range and voltage
(V)
TC2014
TC2015
TC2185
1.8
2.5
2.7
2.8
2.85
3.0
3.3
PA
PB
PC
PD
PE
PF
PG
RA
RB
RC
RD
RE
RF
RG
UA
UB
UC
UD
UE
UF
UG
e represents year and 2-month period code
f
represents lot ID number
DS21662C-page 12
 2003 Microchip Technology Inc.
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E
E1
p
B
p1
n
D
1
α
c
A
Units
Dimension Limits
n
Number of Pins
p
Pitch
p1
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
φ
L
β
A
A2
A1
E
E1
D
L
φ
c
B
α
β
MIN
.035
.035
.000
.102
.059
.110
.014
0
.004
.014
0
0
A2
A1
INCHES*
NOM
5
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
.006
.017
5
5
MAX
.057
.051
.006
.118
.069
.122
.022
10
.008
.020
10
10
MILLIMETERS
NOM
5
0.95
1.90
0.90
1.18
0.90
1.10
0.00
0.08
2.60
2.80
1.50
1.63
2.80
2.95
0.35
0.45
0
5
0.09
0.15
0.35
0.43
0
5
0
5
MIN
MAX
1.45
1.30
0.15
3.00
1.75
3.10
0.55
10
0.20
0.50
10
10
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
 2003 Microchip Technology Inc.
DS21662C-page 13
TC2014/2015/2185
NOTES:
DS21662C-page 14
 2003 Microchip Technology Inc.
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-XX
X
XXXX
Device
Output
Voltage
Temperature
Range
Package
Device:
Output Voltage:
TC2014:
TC2015:
TC2185:
50 mA LDO with Shutdown and VREF Bypass
100 mA LDO with Shutdown and VREF Bypass
150 mA LDO with Shutdown and VREF Bypass
XX
XX
XX
XX
XX
=
=
=
=
=
1.8V
2.7V
2.8V
3.0V
3.3V
Temperature Range:
V
=
-40°C to +125°C
Package:
CTTR = Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
Examples:
a)
TC2014-1.8VCTTR:5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2014-2.85VCTTR: 5LD SOT-23-A,
2.85V, Tape and Reel.
c)
TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,
Tape and Reel.
a)
TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2015-2.85VCTTR: 5LD SOT-23-A,
2.85V, Tape and Reel.
c)
TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,
Tape and Reel.
a)
TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b)
TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,
Tape and Reel.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2003 Microchip Technology Inc.
DS21662C-page15
TC2014/2015/2185
NOTES:
DS21662C-page 16
 2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such
acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications. No
representation or warranty is given and no liability is assumed
by Microchip Technology Incorporated with respect to the
accuracy or use of such information, or infringement of patents
or other intellectual property rights arising from such use or
otherwise. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART, PRO MATE and
PowerSmart are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Accuron, dsPIC, dsPICDEM.net, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming,
ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net,
PowerCal, PowerInfo, PowerTool, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark of
Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2003 Microchip Technology Inc.
DS21662C - page 17
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
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Web Address: http://www.microchip.com
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Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
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12/05/02
DS21662C-page 18
 2003 Microchip Technology Inc.