BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices Edition 2014-08-05 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFR843EL3 BFR843EL3, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Revision History: 2014-08-05, Revision 1.0 Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.0, 2014-08-05 BFR843EL3 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 5.1 5.2 5.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 9 Package Information TSLP-3-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 4 11 11 11 12 Revision 1.0, 2014-08-05 BFR843EL3 List of Figures List of Figures Figure 4-1 Figure 5-1 Figure 6-1 Figure 6-2 Figure 6-3 Figure 6-4 Figure 6-5 Figure 7-1 Figure 7-2 Figure 7-3 Figure 7-4 Figure 7-5 Figure 7-6 Figure 7-7 Figure 7-8 Figure 7-9 Figure 7-10 Figure 7-11 Figure 7-12 Figure 9-1 Figure 9-2 Figure 9-3 Figure 9-4 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFR843EL3 Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . . . . . Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Description (Marking BFR843EL3: T2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 10 12 16 16 17 17 18 19 19 20 20 21 21 22 22 23 23 24 24 26 26 26 26 Revision 1.0, 2014-08-05 BFR843EL3 List of Tables List of Tables Table 3-1 Table 4-1 Table 5-1 Table 5-2 Table 5-3 Table 5-4 Table 5-5 Table 5-6 Table 5-7 Table 5-8 Table 5-9 Table 5-10 Data Sheet Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AC Characteristics, VCE = 1.8 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 1.8 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VCE = 1.8 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 1.8 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 1.8 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision 1.0, 2014-08-05 BFR843EL3 Product Brief 1 Product Brief The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in a very small thin leadless plastic package, ideal for modules. Data Sheet 7 Revision 1.0, 2014-08-05 BFR843EL3 Features 2 • • • • • • • • • Features Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology High maximum RF input power and ESD robustness Unique combination of high RF performance, robustness and ease of application circuit design Low noise figure: NFmin = 1 dB at 2.4 GHz and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA High gain |S21|2 = 22 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 22 dBm at 2.4 GHz and 5.5 GHz, 1.8 V, 25 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Pb-free (RoHS compliant) and halogen-free very small thin leadless plastic package Applications As Low Noise Amplifier (LNA) in • • • • • Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA) Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz ISM bands up to 10 GHz Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFR843EL3 TSLP-3-10 Data Sheet Pin Configuration 1=B 2=C 8 3=E Marking T2 Revision 1.0, 2014-08-05 BFR843EL3 Maximum Ratings 3 Maximum Ratings Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Collector emitter voltage VCEO Values Min. Max. – 2.25 2.0 Unit Note / Test Condition V TA = 25 °C TA = -55 °C Open base 1) Collector emitter voltage VCES – 2.25 2.0 V TA = 25 °C TA = -55 °C E-B short circuited 2) Collector base voltage VCBO – 2.9 2.6 V TA = 25 °C TA = -55 °C Open emitter Base current IB -1 5 mA Collector current IC – 55 mA RF input power PRFin – 20 dBm f = 1.9 GHz, matched to 50 Ω ESD stress pulse VESD -1 +1 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation3) Ptot – 125 mW TS ≤ 103 °C Junction temperature TJ – 150 °C Storage temperature TStg -55 150 °C 1) VCES is identical to VCEO due to design 2) VCBO is similar to VCEO due to design 3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.0, 2014-08-05 BFR843EL3 Thermal Characteristics 4 Thermal Characteristics Table 4-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - soldering point RthJS – 375 – K/W – 1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation). 130 120 110 100 90 Ptot [mW] 80 70 60 50 40 30 20 10 0 0 25 50 75 T [°C] 100 125 150 S Figure 4-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 10 Revision 1.0, 2014-08-05 BFR843EL3 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Collector emitter breakdown voltage V(BR)CEO 2.25 2.6 Collector emitter leakage current ICES – – Unit Note / Test Condition V IC = 1 mA, IB = 0 Open base nA VCE = 1.5 V, VBE = 0 Max. 400 E-B short circuited Collector base leakage current ICBO – – 400 nA VCB = 1.5 V, IE = 0 Open emitter Emitter base leakage current IEBO – – 10 DC current gain hFE 230 – 360 260 580 – μA VEB = 0.5 V, IC = 0 Open collector VCE = 1.8 V, IC = 1 mA VCE = 1.8 V, IC = 15 mA Pulse measured 5.2 General AC Characteristics Table 5-2 General AC Characteristics at TA = 25 °C Parameter Collector base capacitance1) Symbol CCB Values Min. Typ. Max. – 5.26 0.07 – Unit Note / Test Condition pF f = 1 MHz f = 1 GHz VCB = 1.8 V, VBE = 0 Emitter grounded Collector emitter capacitance CCE – 0.42 – pF f = 1 MHz VCE = 1.8 V, VBE= 0 Base grounded Emitter base capacitance CEB – 0.66 – pF f = 1 MHz VEB = 0.4 V,VCB = 0 Collector grounded 1) Including integrated feedback capacitance Data Sheet 11 Revision 1.0, 2014-08-05 BFR843EL3 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C 3 VB VC Bias-T Bias -T GND In 1 RFIn RFOut Out 2 Figure 5-1 BFR843EL3 Testing Circuit Table 5-3 AC Characteristics, VCE = 1.8 V, f = 450 MHz Parameter Symbol Values Min. Typ. Unit Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 25.5 24.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.95 22.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7.5 23 – – Table 5-4 dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 900 MHz Parameter Power Gain Maximum power gain Transducer gain Data Sheet Note / Test Condition Symbol Values Min. Typ. Max. – – 25 24 – – dB Gms |S21|2 12 IC = 15 mA IC = 15 mA Revision 1.0, 2014-08-05 BFR843EL3 Electrical Characteristics Table 5-4 AC Characteristics, VCE = 1.8 V, f = 900 MHz (cont’d) Parameter Symbol Minimum Noise Figure Minimum noise figure Associated gain Linearity 1 dB compression point at output 3rd order intercept point at output Table 5-5 Values Unit Min. Typ. Max. – – 0.95 22 – – dB NFmin Gass OP1dB OIP3 – – 7 21.5 Symbol dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition – – Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 24.5 23 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 0.95 21.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 7 21.5 – – dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 24.5 22.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1 21 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 8 mA IC = 8 mA AC Characteristics, VCE = 1.8 V, f = 1.5 GHz Parameter Table 5-6 Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm OP1dB OIP3 – – 7 21 13 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.0, 2014-08-05 BFR843EL3 Electrical Characteristics Table 5-7 AC Characteristics, VCE = 1.8 V, f = 2.4 GHz Parameter Symbol Values Unit Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 24 22 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1 20 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6 20.5 – – Table 5-8 dB dB Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 23 19.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.05 18.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 6 20.5 – – IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Unit Note / Test Condition AC Characteristics, VCE = 1.8 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 21.5 16.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.15 15.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output Data Sheet IC = 15 mA IC = 15 mA AC Characteristics, VCE = 1.8 V, f = 3.5 GHz Parameter Table 5-9 Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm OP1dB OIP3 – – 4.5 20.5 14 – – ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Revision 1.0, 2014-08-05 BFR843EL3 Electrical Characteristics Table 5-10 AC Characteristics, VCE = 1.8 V, f = 10 GHz Parameter Symbol Values Unit Min. Typ. Max. Power Gain Maximum power gain Transducer gain Gms |S21|2 – – 14.5 10.5 – – Minimum Noise Figure Minimum noise figure Associated gain NFmin Gass – – 1.35 10.5 – – Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 – – 1.5 17 – – Note / Test Condition dB IC = 15 mA IC = 15 mA dB IC = 8 mA IC = 8 mA dBm ZS = ZL = 50 Ω IC = 15 mA IC = 15 mA Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Data Sheet 15 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic DC Diagrams 6 Characteristic DC Diagrams 22 20 90µA 18 80µA 16 70µA 60µA IC [mA] 14 50µA 12 40µA 10 30µA 8 6 20µA 4 10µA 2 0 0 0.5 1 1.5 2 2.5 VCE [V] Figure 6-1 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter 3 hFE 10 2 10 −2 10 −1 10 0 10 Ic [mA] 1 10 2 10 Figure 6-2 DC Current Gain hFE = f (IC), VCE = 1.8 V Data Sheet 16 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic DC Diagrams 2 10 1 10 0 10 IC [mA] −1 10 −2 10 −3 10 −4 10 −5 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 6-3 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V 0 10 −1 10 −2 10 IB [mA] −3 10 −4 10 −5 10 −6 10 −7 10 0.5 0.55 0.6 0.65 0.7 0.75 VBE [V] 0.8 0.85 0.9 Figure 6-4 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V Data Sheet 17 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic DC Diagrams −6 10 −7 10 −8 IB [A] 10 −9 10 −10 10 −11 10 0.3 0.35 0.4 0.45 0.5 0.55 VEB [V] 0.6 0.65 0.7 Figure 6-5 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V Data Sheet 18 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 7 Characteristic AC Diagrams 24 22 20 18 OIP3 [dBm] 16 1.5V, 2400MHz 1.8V, 2400MHz 1.5V, 5500MHz 1.8V, 5500MHz 14 12 10 8 6 4 2 0 0 5 10 15 20 I [mA] C 25 30 35 Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters 7 8 7 16 7 1 9 10 11 2 3 1 1 14 30 15 16 17 9 10 11 12 13 14 22 18 21 15 10 19 20 IC [mA] 15 16 17 16 5 15 1 22 21 20 19 17 19 20 21 22 19 20 21 18 25 20 18 23 35 18 20 19 17 1.2 16 15 1.4 18 17 16 15 1.6 18 17 1.8 19 2 VCE [V] Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz Data Sheet 19 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 35 5 6 7 4 2 3 5 6 2 20 3 4 5 15 −1 2 1 0 −1 −2 −3 −4 −5 1.2 1 6 5 4 5 4 3 2 10 7 6 4 3 5 4 7 IC [mA] 2 3 −1 0 1 −4 −3 30 −2 −1 0 25 1 1 0 −4 −5 1.4 −1 −2 −3 3 2 −3 −4 1.6 1 0 −2 1.8 2 VCE [V] Figure 7-3 Compression Point at Output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz 30 28 26 G ms 24 G [dB] 22 20 G ma 18 |S |2 21 16 14 12 10 8 0 1 2 3 4 5 6 7 f [GHz] 8 9 10 11 12 Figure 7-4 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 15 mA Data Sheet 20 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 30 28 Gmax [dB] 26 24 22 20 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 18 16 3.50GHz 14 12 5.50GHz 10 8 6 10.00GHz 12.00GHz 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 IC [mA] Figure 7-5 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz 30 28 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz 26 24 Gmax [dB] 22 20 18 16 10.00GHz 14 12.00GHz 12 10 8 0 0.5 1 1.5 2 2.5 VCE [V] Figure 7-6 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz Data Sheet 21 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.1 0.1 0 −0.1 12.0 11.0 10.0 12.0 9.0 11.0 8.0 0.5 0.210.00.3 0.4 7.0 9.0 6.0 8.0 5.0 4.0 7.0 3.0 2.0 6.0 0.03 to 12 GHz 10 1 1.5 1.0 2 3 4 5 −10 1.0 0.03 5.0 0.03 4.0 −0.2 2.0 3.0 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8mA 15mA −1 Figure 7-7 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 8 / 15 mA 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.45 to 10 GHz 0.1 5.5 8.0 0.1 0 0.2 0.3 0.4 0.5 10.0 3.5 2.4 1.9 1.5 5.5 3.5 1 0.45 0.9 1.50.45 2 10 3 4 5 8.0 10.0 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 −1 8mA 15mA Figure 7-8 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 8 / 15 mA Data Sheet 22 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 12 GHz 0.1 0.1 0 −0.1 12.0 12.0 11.0 11.0 10.0 0.2 10.00.3 0.49.00.5 8.0 9.0 7.0 8.0 6.0 5.0 7.0 4.0 3.0 6.0 10 1 2.0 1.5 3 4 5 1.0 −10 1.0 5.0 −0.2 2 0.03 0.03 4.0 −5 2.0 3.0 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 8mA 15mA −1 Figure 7-9 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 8 / 15 mA 1.6 1.5 1.4 NFmin [dB] 1.3 1.2 1.1 1 IC = 15mA 0.9 0.8 IC = 8mA 0.7 0.6 0 1 2 3 4 5 6 f [GHz] 7 8 9 10 Figure 7-10 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 8 / 15 mA, ZS = Zopt Data Sheet 23 Revision 1.0, 2014-08-05 BFR843EL3 Characteristic AC Diagrams 3 2.8 f = 10GHz 2.6 2.4 f = 5.5GHz 2.2 f = 3.5GHz NFmin [dB] 2 f = 2.4GHz 1.8 f = 0.9GHz 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 IC [mA] Figure 7-11 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz 4 f = 10GHz 3.5 f = 5.5GHz 3 f = 3.5GHz f = 2.4GHz NF50 [dB] 2.5 f = 0.9GHz 2 1.5 1 0.5 0 0 5 10 15 20 25 IC [mA] Figure 7-12 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. Data Sheet 24 Revision 1.0, 2014-08-05 BFR843EL3 Simulation Data 8 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFR843EL3 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFR843EL3 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 25 Revision 1.0, 2014-08-05 BFR843EL3 Package Information TSLP-3-10 Package Information TSLP-3-10 0.02 MAX. A 0.575 0.25 0.5 ±0.035 0.1 A 3 B 0.1 B 2 1 0.35 Pin 1 marking 0.15 ±0.035 2x 1±0.05 0.6 ±0.05 0.32 MAX. 0.1 B Bottom view 0.4 ±0.035 Top view 0.25 ±0.035 2x 9 0.1 A TSLP-3-10-PO V01 0.225 0.2 0.2 0.17 0.225 0.15 Copper Solder mask 0.255 0.5 0.95 0.2 0.35 1 0.45 R0.19 0.315 0.6 0.38 Figure 9-1 Package Outline R0.1 Stencil apertures TSLP-3-10-FP V01 Figure 9-2 Package Footprint Figure 9-3 Marking Description (Marking BFR843EL3: T2) 0.35 1.2 Pin 1 marking 8 4 0.8 TSLP-3-10-TP V01 Figure 9-4 Tape dimensions Data Sheet 26 Revision 1.0, 2014-08-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG